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    Walsin Technology Corporation 0201N100J250CT

    CAP CER 10PF 25V C0G/NP0 0201
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    Walsin Technology Corporation 0201N100J100CT

    CAP CER 10PF 10V C0G/NP0 0201
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    Walsin Technology Corporation 0201N100F500CT

    CAP CER 10PF 50V C0G/NP0 0201
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    Novacap ES2211N100K502NTM

    CAP CER 10PF 250VAC C0G/NP0 2211
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    Walsin Technology Corporation 0201N100G500CT

    CAP CER 10PF 50V C0G/NP0 0201
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    DigiKey 0201N100G500CT Digi-Reel 1,299 1
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    1N100 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N100 Microsemi Optimized For Radio Frequency Response Original PDF
    1N100 BKC International 100 V, 500 mA, gold bonded germanium diode Scan PDF
    1N100 BKC International Gold Bonded Germanium Diode Scan PDF
    1N100 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    1N100 International Semiconductor DIODE FAST RECOVERY RECTIFIER 80V A 2DO-7 REEL Scan PDF
    1N100 International Semiconductor GENERAL PUROSE DIODE Scan PDF
    1N100 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N100 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N100 Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF
    1N1003 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N1005 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N1005 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N1007 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N1007 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N1008 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N1008 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N100A Micro Commercial Components DIODE STANDARD RECOVERY RECTIFIER 100V 0.07A 2DO-7 Original PDF

    1N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N100

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


    Original
    PDF 1N100 O-263 O-220AB 1N100

    1N100

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 RDS on = 1000 V = 1.5 A = 11 Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 1N100 O-263 O-220AB O-220 1N100

    "Germanium Diode"

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • 1N100A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength


    Original
    PDF 1N100A 400mA 250mA "Germanium Diode"

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 1N100P IXTP 1N100P VDSS ID25 RDS on = 1000 V = 1.2 A = 13 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 1N100P 1N100P O-263 O-220 405B2

    "Germanium Diode"

    Abstract: No abstract text available
    Text: MCC Features • • • 1N100A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings


    Original
    PDF 1N100A 400mA 250mA "Germanium Diode"

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


    Original
    PDF 1N100 O-263 O-220AB

    1N100

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 1N100 O-263 O-220AB 728B1 1N100

    1N100

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM


    Original
    PDF 1N100 O-268 O-247 728B1 1N100

    1N100

    Abstract: selenium diode germanium
    Text: 1N100 Germanium Diode 0.90 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N100 Online Store 1N100 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original
    PDF 1N100 1N100 com/1n100 selenium diode germanium

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 10 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original
    PDF 1N100 1N100 O-220AB O-263

    1N91 DATASHEET

    Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
    Text: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7


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    PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N91 DATASHEET DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60

    Untitled

    Abstract: No abstract text available
    Text: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm


    Original
    PDF 1N100A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM


    Original
    PDF 1N100 O-268 O-247 728B1

    gold detectors circuit

    Abstract: 1N100A diodes 1N100A
    Text: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm


    Original
    PDF 1N100A gold detectors circuit 1N100A diodes 1N100A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V


    Original
    PDF 1N100 O-263 O-220AB

    dual diode TO254AA 600V

    Abstract: No abstract text available
    Text: OM 1N100SA OM 5N100SA 1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package


    OCR Scan
    PDF 1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V

    Untitled

    Abstract: No abstract text available
    Text: 1989963 C E N T R A L S E M I C O N D U C T O R _ 92D 00408 f \ DESCRIPTION The CENTRAL SEMICONDUCTOR 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes mounted in a hermetically sealed glass case, designed for general purpose applications.


    OCR Scan
    PDF 1N100A, 1N270, 1N277, 1N281, 1N283 1N270 1N277 1N281 1N283 1N100A

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan
    PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N34A do-35

    Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
    Text: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270


    OCR Scan
    PDF 00003Q0 T-01-0 AA117 AA118 AA121 AA143 AA144 AAY30 AAY32 AAY33 1N34A do-35 1N34A reverse recovery OA47 AA143 oa90 OA90 AA218 1N60 LL 34 1N3467

    1n270

    Abstract: diode germanium 1n270 diodes 1n270 diodes 1N100A 1N283 1N100A 1N277 1N281
    Text: 1989963 CENTRAL SEMICONDUCTOR 92D 00406 r \ DESCRIPTION The CENTRAL S E M I C O N D U C T O R 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes m ounted in a h e r m e t i c a l l y sealed glass case, designed for general purpose applications,


    OCR Scan
    PDF 1N100A, 1N270, 1N277, 1N281, 1N283 1N100A 1N270 1N277 1N281 10mW/10Â diode germanium 1n270 diodes 1n270 diodes 1N100A 1N281

    OA47 germanium

    Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
    Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276


    OCR Scan
    PDF AA117 AA118 AA121 AA130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 OA47 germanium AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87

    1N100

    Abstract: germanium diode Scans-0014269 "Germanium Diode"
    Text: Q3E D I 1 1 7 ^ 0 3 B K C IN TE RNA TIONAL □□□□111 S Type No. 1N100 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption


    OCR Scan
    PDF 1N100 MIL-S-19500, 1N100 germanium diode Scans-0014269 "Germanium Diode"

    Untitled

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS


    OCR Scan
    PDF G00G32fci 1N100A 250mA 400mA 10mW/10 --50uA

    TP1N100

    Abstract: TP1N95 MTP1N100 MS 1117 ADC
    Text: MOTOROLA SC IM E XST RS/R F D I b 3 fc>7254 0 0 0 ^ 5 0 r MOTOROLA ^ f 2 I - n •I SEMICONDUCTOR TECHNICAL DATA M TM 1N95 M TM 1N100 MTP1N95 MTP1N 100 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS


    OCR Scan
    PDF Y145M. O-204AA T01SA TP1N100 TP1N95 MTP1N100 MS 1117 ADC