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    1N276 Price and Stock

    Central Semiconductor Corp 1N276-BK

    DIODE GEN PURP 50V 40MA DO7
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    DigiKey 1N276-BK Bulk
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    Central Semiconductor Corp 1N276 BK

    Diode Switching 50V 200mA 2-Pin DO-7 Bulk - Boxed Product (Development Kits) (Alt: 1N276 BK)
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    Avnet Americas 1N276 BK Box 2,000
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    Microsemi Corporation 1N276JAN

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    Quest Components 1N276JAN 47
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    CIT Relay & Switch 1N276JAN

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    Quest Components 1N276JAN 29
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    OSRAM SYLVANIA 1N276

    RECTIFIER DIODE, 1 ELEMENT, 0.04A, 50V V(RRM), GERMANIUM, DO-7
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    Quest Components 1N276 20
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    1N276 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N276 Microsemi Gold Bonded Germanium Diode Original PDF
    1N276 American Microsemiconductor Germanium Rectifiers Scan PDF
    1N276 BKC International 60 V, 500 mA, gold bonded germanium diode Scan PDF
    1N276 Central Semiconductor Scan PDF
    1N276 Crimson Semiconductor GOLD BOND DO-7 Diode Scan PDF
    1N276 Crimson Semiconductor Gold Bonded Germanium Diodes, DO-7 Scan PDF
    1N276 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N276 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N276 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N276 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N276 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N276 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N276 Semitronics Germanium Diodes Scan PDF
    1N276 Thomson-CSF Condensed Data Book 1977 Scan PDF
    1N276 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N2762 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N2762 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N2762 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N2762 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N2763 Motorola Motorola Semiconductor Datasheet Library Scan PDF

    1N276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N2767

    Abstract: No abstract text available
    Text: 1N2767 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage20.4 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W) Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175’ Package StyleAxial-25


    Original     		PDF 1N2767 Voltage20 pp/10k StyleAxial-25

    Untitled

    Abstract: No abstract text available
    Text: 1N2765 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.8 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W) Z(z) Max. (ê) Dyn. Imped.20 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175’ Package StyleAxial-13


    Original     		PDF 1N2765 pp/10k StyleAxial-13

    gold detectors

    Abstract: germanium diodes forward drop germanium diodes 1n276 gold detectors circuit IR Detectors 1N276 fM detectors
    Text: Gold Bonded 1N276 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications AM/FM detectors DO-7 Glass Package Ratio detectors FM discriminators 0.018-0.022" TV audio detectors


    Original     		PDF 1N276 gold detectors germanium diodes forward drop germanium diodes 1n276 gold detectors circuit IR Detectors 1N276 fM detectors

    diode germanium 1n276

    Abstract: 1N276
    Text: 1N276 w w w. c e n t r a l s e m i . c o m GERMANIUM SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N276 is a gold bonded germanium diode mounted in a hermetically sealed glass case, designed for switching applications. MARKING: FULL PART NUMBER DO-7 CASE


    Original     		PDF 1N276 1N276 0mW/10Â 30-April diode germanium 1n276

    Untitled

    Abstract: No abstract text available
    Text: 1N2764 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage3.9 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’


    Original     		PDF 1N2764 Current300u

    Untitled

    Abstract: No abstract text available
    Text: 1N2769 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage34 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W) Z(z) Max. (ê) Dyn. Imped.100 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175’ Package StyleAxial-25


    Original     		PDF 1N2769 Voltage34 pp/10k StyleAxial-25

    JVR 431 0.7

    Abstract: 1N276 A145C thermal 141L t41l
    Text: ● l_l r NCH-POUNO MIL-S-19500/192B 6 October 1989 141L-S-19500/192A 19 Aprfl 1968 MILITARY I SPECIFICATION SEMICONOUCTOR DEVICE, OIOOE, GERMANIUM, WITCHING TYPE 1N276, JAN, JANTX, AND JANTXV I This specification Agencies of the 1. is approved Department


    Original     		PDF MIL-S-19500/192B 141L-S-19500/192A 1N276, JVR 431 0.7 1N276 A145C thermal 141L t41l

    1N91 DATASHEET

    Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
    Text: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7


    Original     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N91 DATASHEET DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60

    AA119 leakage current

    Abstract: No abstract text available
    Text: ^£,mi-L.onaactoi ^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. GERMANIUM DIODES TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1 Gold Bonded Germanium Diodes in DO-7 Package Peak Inverse Voltage (WIN.) (PIV) Type Volts 65 AA113


    Original     		PDF AA113 AA117 AA118 AA119 AA138 AA143 AA144 AAZ15 AAZ17 AAZ18 AA119 leakage current

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    4026 IC

    Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
    Text: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and


    OCR Scan     		PDF GDDG15S MIL-S-19500/192B MIL-S-19500/192A 1N276, MIL-S-19500. MIL-S-19500 4026 IC CI 4016 in276 1N276 IR411 ic 4081 ci 4081

    DIODE 1N649

    Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
    Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V


    OCR Scan     		PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454

    OA47 germanium

    Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
    Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276


    OCR Scan     		PDF AA117 AA118 AA121 AA130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 OA47 germanium AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87

    diode germanium 1n276

    Abstract: Germanium Schottky diode D0Q0330 DSAIH0002536
    Text: B K C INTERNATIONAL 1 1 7 ^ 0 3 D0Q0330 h 30E D O 3 .-O7 FEATURES • • • ♦ Solder plate DO-7 package Very low noise level Non-ESD sensitive >15 KV Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES & • Thirty years of proven reliability « Ideally suited for schottky diode replacement;


    OCR Scan     		PDF D0Q0330 1N276 MIL-S-19500 300nS diode germanium 1n276 Germanium Schottky diode DSAIH0002536

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N47A

    Abstract: No abstract text available
    Text: jemitronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)


    OCR Scan     		PDF 1N42S 1N1735 1N2620 1N2620A 1N2620B 1N2621 1N2621A 1N2621S 1N2622 1N2622A 1N47A

    IN34A

    Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
    Text: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5


    OCR Scan     		PDF 1N137B 1N138B 1N200 1N201 1N202 1N203 1N204 1N205 1N206 1N207 IN34A 1N215 1N21 diode 1N218 1N87 uua 170 1N271

    1N295

    Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
    Text: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0


    OCR Scan     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 diodes 1N34A 1N91 diode DO-7 1N93 1N91 1N92 1N4502

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p


    OCR Scan     		PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    IN5351

    Abstract: 1N5389 1N4701A IN3998 IN3999 1N9408 1n2046-2 1n93B 1N2765 1N1736A
    Text: discrete devices iomitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon zener diodes N O T E S : T h e fo llo w in g n o te s e x p la in v a ria tio n s in th e s ta n d a rd ty p e n u m b e rs lis t e d fo r S ilic o n Z e n e r D io d e s . “ N o te ” n u m b e rs


    OCR Scan     		PDF

    1N126A

    Abstract: No abstract text available
    Text: GOLD BOND TYPE 1N34G B 1N55A PEAK REV ER SE VO LTAG E AVERAGE FO RW ARD CURRENT M I N IM U M FO RW ARD CURRENT A T 1 VO LT VO LTS M A X IM U M REV ER SE CURRENT A T 25°C mA mA 75 50 5 3 0 at -10V 170 50 4 5 0 0 at -1 5 0 V 1N96 75 30 20 8 0 0 at -5 0 V 1N96A


    OCR Scan     		PDF 1N34G 1N55A 1N96A 1N98A 1N118 1N118A 1N270 1N276 1N126A

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    to3a

    Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
    Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A


    OCR Scan     		PDF DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode