2N6211 Search Results

Contextual Info: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C

TA7719

Abstract: TA7719 P 2n6213 rca 2N6214
Contextual Info: 3875081 G E SOLID STATE High-Voltage Power Transistors D ËT|3fl7SD ai 0 0 1 7 ia4 7 W~D _ S_ 2N6211, 2N6212, 2N6213, 2N6214 File Number 507 High-Voltage Medium-Power Silicon P-N-P Transistors For Switching and Amplifier Applications in Military,

2N6211

Abstract: 2N6212 2n6212 data all ic datasheet 2N6213
Contextual Info: TECHNICAL DATA 2N6211 JAN, JTX, JTXV 2N6212 JAN, JTX, JTXV 2N6213 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/461 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N6212

Abstract: 2N6213 m6213 2N6211
Contextual Info: Ü& MOS PEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig

ta7719

Abstract: N6211 2n6214 2N6211 harris Si923 2N6211 si9234 TA771 2n6213 rca TA7410
Contextual Info: File Number 5 0 7 HARRIS 2N6211, 2N6212, 2N6213, 2N6214 SEMICOND SECTOR 5bE D • 4302271 0040515 7 ~3 3 ~ High-Voltage Medium-Power Silicon P-N-P Transistors T3b ■ H AS & For Switching and Amplifier Applications in Military, industrial, and Commerical Equipment

2N6212

Abstract: 2N6213 2N6211
Contextual Info: TECHNICAL DATA 2N6211 JAN, JTX, JTXV 2N6212 JAN, JTX, JTXV 2N6213 JAN, JTX, JTXV Processed per MIL-PRF-19500/461 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2NS344

Contextual Info: COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No SECTION 2 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2NS344 2N5345 2N5679 2N5680 2N6211 2N6212 2N6213 2N6214

KT835A

Abstract: b0330 MJ032 MJ-03 b0362 2SA699A matsua 2N3171 KT83 kt835 M0810
Contextual Info: POWER SILICON PNP Item Number Part Number 10 15 20 25 30 >= 1 A, SK3624 2N6421 MJ3584 BUX66A BUX66A 2N6211 MJ3585 2N6422 MJ4240 MJ4240 2 2 BUX66B BUX66B BUX66C BUX66C 2N6212 2SA1009M SPT6145 2SA1009K 2SA1009J 2 2N6213 2N6214 2SA1009AM 2SA1009AL 2SA1009AK 2SA1412Z

2N6212

Abstract: 2N6213
Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 461 Devices Qualified Level 2N6211 2N6212 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

IC 7443

Abstract: 2N6211 TC 3162 2N6213 motorola 2N6212 2N6213
Contextual Info: MOT ORCL A SC XSTRS/R F ÎHE D | b3b?2S4 □QflMbQb 1 | 2N6211 2N6212 2N6213 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE MEDIUM-POWER HIGH-VOLTAGE PNP POWER TRANSISTORS POWER TRANSISTORS . . . designed fo r high-speed switching and linear am plifier applications

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

2N6211

Abstract: 2N6212 2N6213 m6213 transistor SST 250
Contextual Info: MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers.

ta7719

Abstract: 2N6214 transistor C730 ta7410 2N6212 clare mercury relay 2N6211 rca 2N6211 P6019 s43a
Contextual Info: 3875081 G E S OL I D S T A T E DËTJ 3 07 50 0 1 High-Voltage Power Transistors 0Q171Û4 7 9 W~D S _ 2N6211, 2N6212, 2N6213, 2N6214 File Num ber 507 High-Voltage Medium-Power Silicon P-N-P Transistors

2N6213

Abstract: 2N6211 2N6212 2N6211 JANTX
Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices Qualified Level 2N6211 2N6212 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

Contextual Info: NE III EN6LAND SEMICONDUCTOR S'ìE ]> bSt.M R'ìa OOOOOM' ì NPN TO-66 077 H N ES lc M A X = 1 -7 A V ce<xsus) = 3 5 -4 0 0 V fi = .75-50 MHz Case 809 T '3 S ' O / le {MAX) W 2N6049 2N6211 2N6212 2N6213 55 250h 300* 400h 4 1 5 5 25-100 5/4 40-200® 5/10

Contextual Info: 2N6211 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N6211

Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
Contextual Info: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig

Contextual Info: = 1-7A V ceo sus = 3 5 -4 0 0 V fT = .75-50 M Hz lc(MAX) IMPN TO-66 Case 8 0 9 PNP VCE (SAT) @ IC / IB (V @ A /A ) VCEO (SUSI (MAX) (V) (A) 2N6049 2N6211 2N6212 2N6213 55 250b 300h 4001* 4 1 5 5 25-100 . 5/4 40-200®.5/10 25-100@1/10 25-100@1/10 10.5/.05

Contextual Info: 2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.

Contextual Info: 2N6211 2N6212 2N6213 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.

2N6211

Abstract: TA 7719
Contextual Info: File Num ber 2N6211, 2N6212, 2N6213, 2N6214 507 High-Voltage Medium-Power Silicon P-N-P Transistors For S w itchin g and A m p lifie r A p p licatio n s in M ilitary, Industrial, and C o m m en ça i Equipm ent Features: • High voltage ratings: V c e o s u s = -400 V max.

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

RCA413

Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.