Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89-3L PXT3904 TRANSISTOR NPN 1. BASE FEATURES z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89
OT-89-3L
PXT3904
PXT3906
100mA
100MHz
10Hz-15
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PDF
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PXT3906
Abstract: PXT3904
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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OT-89
OT-89
PXT3906
PXT3904
-10mA
-50mA
100MHz
10Hz-15
-10mA
PXT3906
PXT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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Original
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OT-89-3L
OT-89-3L
PXT3906
PXT3904
-100mA
-10mA
-50mA
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PDF
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PXT3906
Abstract: marking 1A
Text: PXT3904 SOT-89 Transistor NPN 1. BASE 1 3. EMITTER 2 B 2.6 4.25 2.4 3.75 Compliment to PXT3906 Low current 0.8 MIN 0.44 0.37 Low voltage MARKING: 1A Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
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Original
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PXT3904
OT-89
OT-89
PXT3906
100mA
100MHz
10Hz-15
marking 1A
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PDF
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PXT3904
Abstract: PXT3906 marking 1A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3904 TRANSISTOR NPN 1. BASE FEATURES 1 z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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OT-89
OT-89
PXT3904
PXT3906
100mA
100MHz
10Hz-15
PXT3904
PXT3906
marking 1A
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PDF
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Untitled
Abstract: No abstract text available
Text: PXT3906 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 3. EMITTER 2 Features Compliment to PXT3904 Low current Low voltage B 2.6 4.25 2.4 3.75 0.8 MIN 0.44 0.37 MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 4.6 4.4 1.8
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Original
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PXT3906
OT-89
OT-89
PXT3904
-10mA
-50mA
-100mA
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PDF
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2N5401
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V
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OCR Scan
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2N5401
-160V,
5-50nA
-50mA,
-10mA
100MHz
10Hz-15
2N5401
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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OCR Scan
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2N5400
2N5550
2N5551
O-92A
2N5400,
2N5401
2N5550,
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PDF
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D00373
Abstract: GDG3737 A138
Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN
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OCR Scan
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05DM33Ã
GDG3737
T-91-01
D00373
A138
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PDF
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2N555
Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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OCR Scan
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2N5400
2N5401
2N5550
2N5551
2N5400,
2N5401
2N5550,
O-92A
2N5400
2N555
5401
transistor 2N 5551
5551
555-1
transistor 2N5401
1000C
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N •m ü i REF01 +10V Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • OUTPUT VOLTAGE: +10V ±0.2% max • EXCELLENT TEMPERATURE STABILITY: 8.5ppm/°C max -40°C to +85°C 10.0 ppm/°C max (~55°C to +125°C) • LOW NOISE: 5^Vp-p typ (0.1 Hz to 10Hz)
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OCR Scan
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REF01
40VDC
REF01
10knto
50kii
AB-002
AB-004
OPA27.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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2N5209
2N5210
O-92A
2N5209,
2N5210
2N5086,
2N5087-
350mW
BOX69477
2N5209
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PDF
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YTS4126
Abstract: YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04
Text: - 350 - 1 1 T a = 2 5 tC . * E P f i T c = 2 5 t 5 m % m m VcBO Vceo (V) (V) ÍCC DC) (A) Pc Pc* iCBO (max) Vc b (W) (W) (ilk) (V) YTS4124 M 2 G A/SW 30 25 0. 2 0.2 0.05 20 YTS4125 M 2 G A/SW -30 -2 5 -0.2 0.2 M2 M2 M2 M2 M2 G A/SW -25 - 25 -0.2 0 .2 -0.05
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YTS41Z4
YTS4125
YTS4126
YTS4400
S4401
YTS4402
YTS4403
YTS4401
YTS4126
YTS4403
YTS4125
YTS4124
YTS4401
YTS4123
YTS4400
YTS4402
sc 005 04
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PDF
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YTS2222A
Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60
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UN8231A
UN9110
UN9111
UN9113
UN9114
003ax
SC-59)
YTS2222A
YTS2221
SC-59
YTS2222A
YTS3904
YTS3905
YTS2222
YTS3903
UN9217
YTS4125
YTS2221
YTS2221A
YTS2907
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PDF
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ic 5209
Abstract: 2N5209 2N5210 2N5086 2N5087 BOX69477 MICRO ELECTRONICS 2N 5209 ebc
Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS J CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- EBC ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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2N5209,
2N5210
2N5086,
2N5087.
O-92A
550mW
IC-10mA
RG-22Ka
10Hz-15KHz
IC-20pA
ic 5209
2N5209
2N5086
2N5087
BOX69477
MICRO ELECTRONICS
2N 5209 ebc
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PDF
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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PDF
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05G433
Abstract: No abstract text available
Text: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its
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OCR Scan
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05D433S
T-91-ol
200mA
004SQ.
BE10N1
05G433
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for
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OCR Scan
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2N5086
2N5088
2N5087
2N5089
T0-92A
2N5086,
2N5088;
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PDF
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