zl54
Abstract: zl58 YL162 lcd T1Z12 Diode t1z75 T1Y30 t1z47 ARM cortex R7 processor ZL56 t1z24
Text: Core Tile for ARM Cortex -R4F HBI-0196 User Guide Copyright 2009-2010 ARM Limited. All rights reserved. ARM DUI 0441B ID071010 Core Tile for ARM Cortex-R4F User Guide Copyright © 2009-2010 ARM Limited. All rights reserved. Release Information
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HBI-0196
0441B
ID071010)
ID071010
zl54
zl58
YL162 lcd
T1Z12 Diode
t1z75
T1Y30
t1z47
ARM cortex R7 processor
ZL56
t1z24
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ZL78
Abstract: 7C1001
Text: CY7C1001 CY7C1002 PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C1001 and CY7C1002 are highperformance CMOS static RAMs orga nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac
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CY7C1001
CY7C1002
256Kx
7C1001)
CY7C1002
ZL78
7C1001
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CY7C128A
Abstract: C128A CY7C128A-35PC CY7C128A-45DMB
Text: CY7C128A '= CYPRESS Features 2K x 8 Static RAM Functional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns 1 • Low active power — 440 mW commercial — 550 mW (military) • Low standby power
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CY7C128A
CY7C128Aâ
35LMB
24-Pin
45DMB
24-Lead
300-Mil)
C128A
CY7C128A-35PC
CY7C128A-45DMB
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CY7C128A
Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
Text: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048
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QQ0h332
CY7C128A
CY7C128A
consA-55DC
CY7C128Aâ
55DMB
55LMB
7C128
CY7C128A-45DMB
CY7C128A-55DMB
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A12C
Abstract: CY7C107
Text: CYPRESS SEMICONDUCTOR 4bE D n 250=^2 GG ObB GG fl Q C Y P -T'Ut'Z3-0 5 CV7C107 PRELIMINARY 'M CYPRESS SEMICONDUCTOR l M x l Static R/W RAM Features Functional Description • Highspeed — *AA = 25 ns • CMOS for optimum speed/power • Low active power — 825 mW
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D00b3G0
DV7C107
CY7C107
35LMB
T-46-23-05
CY7C107-45DC
CY7C107â
CY7C107-45PC
CY7C107-45VC
CY7C107-45DMB
A12C
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION K ' ß SEMfcONDUC'I'OR 32,768 x 8 Static R/W RAM Features Functional Description • High speed The CY7B198 and CY7B199 are high-pcrformance BiCMOS static RAMs organized as 32,768 words by 8 bits. Easy memory ex pansion _is_provided by an active LOW chip
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CY7B198
CY7B199
CY7B198
CY7B199
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Untitled
Abstract: No abstract text available
Text: CY7C187 CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 15 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW • TTL compatible inputs and outputs • Automatic power-down when dese
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CY7C187
CY7C187
CY7C187â
7C187-20PC
7C187-25PC
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V32 Package
Abstract: CY7C1001 CY7C1002 7C10011
Text: PRELIMINARY ’# CYPRESS • H igh speed — tAA = 12 ns • T ransparent w rite 7C1001 • C M O S for optim um speed/pow er • Low active power — 910 rnW • Low standby power — 275 mW • 2.0V data retention (optional) — lOfl |iW • 256K x 4 Static RAM
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CY7C1001
CY7C1O02
7C1001)
CY7C1002
CY7C1001
CY7C1002
7C1001
38-00200-B
V32 Package
7C10011
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3545C
Abstract: CLE19
Text: K CY7C128A SEMICONDUCTOR Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns 2048 x 8 Static R /W RAM • Capable o f w ithstanding greater than 2001V electrostatic discharge D ata on the eight I/O pins I/Oo through I/O?
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CY7C128A
CY7C128A
38-00094-B
3545C
CLE19
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7C109A-20
Abstract: 7C109A
Text: CY7C109A PRELIMINARY S F # SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is
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CY7C109A
CY7C109A
32-Lead
400-Mil)
32-Pin
7C109A-20
7C109A
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CY7C1006
Abstract: No abstract text available
Text: CY7C1006 PRELIMINARY JL Jfc JL * JLwl 256K x 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable
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CY7C1006
256Kx
CY7C1006
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Untitled
Abstract: No abstract text available
Text: CY7C128A 0 CYPRESS Features 2K x 8 Static RAM Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns [ • Low active power — 440 mW commercial — 550 mW (military) • Low standby power
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CY7C128A
00094-B
0G147SS
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Untitled
Abstract: No abstract text available
Text: CY7C1006 PRELIMINARY 256Kx 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (UE),
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CY7C1006
256Kx
CY7C1006
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A10C
Abstract: CY7C106 C1089 7C106
Text: CYPRESS SEMICONDUCTOR 4bE D O □ 0 G b 2 cm b OCYP 'T - % - Z 3 .-Ì -0 CY7C106 PRELIMINARY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power
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CY7C106
CY7C106
ac35VC
CY7C106-35DMB
CY7C106-35LMB
CY7C106-45DC
CY7C106-45LC
CY7C106-45FC
CY7C106-45VC
CY7C106-45DMB
A10C
C1089
7C106
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Untitled
Abstract: No abstract text available
Text: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features F unctional D escription • T h e CY7C106 is a high-perform ance CM O S static R A M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable
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CY7C106
CY7C106
32-pin
28-pin,
400-milwide
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7C109
Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
Text: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power
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00Gb30b
CY7C108
CY7C109
TheCY7C108
CY7C109
p9-45DC
CY7C109-45PC
CY7C109-45VC
CY7C109-45DMB
GG0b312
7C109
ddgt
A14C
C106
cy7c109-35dmb
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10DC IR 3 PINS
Abstract: CY7C164 7C166 CY7C166 7C164-10 Cypress 7C166 ice power 200 asc A10C A12C CY7C164-20PC
Text: CYPRESS SEMICONDUCTOR MLtE D □ 2 5 0 ^ 2 D0Db47ti l0 CY7C164 CY7C166 C^ iö CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional Description A utom atic power-down w hen deselected O utput Enable OG feature (7C166) CM OS for optimum speed/power
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0Db47t>
CY7C164
CY7C166
7C166)
TheCY7C164andCY7C166arehigh-per-formance
CY7C166
CY7C166â
CY7C166-10LC
CY7C166-10PC
10DC IR 3 PINS
7C166
7C164-10
Cypress 7C166
ice power 200 asc
A10C
A12C
CY7C164-20PC
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IR LFN
Abstract: CY7C161 CY7C162
Text: CYPRESS SEMI COND UCTOR MbE D H aSfl^bLE 5 I ICYP ODDbMM? Features • Automatic power-down when deselected • Transparent write 7061 • CMOS for optimum speed/power • Highspeed — 15 ns U a • Low active power — 633 mW ‘ • Low standby power
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CY7C161
CY7C162
7C161)
CY7C162
CY7C162â
CY7C162-10LC
CY7C162-12DC
IR LFN
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ge c147
Abstract: CY7C147-35KMB
Text: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is
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CY7C147
CY7C147-45LMB
CY7C147
38-00030-B
ge c147
CY7C147-35KMB
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