CY7C107 Search Results

power transistor tsd 4m

Abstract: 12 x 12 fbga thermal resistance
Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM

Contextual Info: fax id: 1058 CY7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

CY7C1007D-10VXI

Abstract: CY7C107D CY7C107D-10VXI
Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance

CY7C1007B

Abstract: CY7C107B
Contextual Info: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

Contextual Info: '/ CY7C107A PRELIM INARY cypress IM x 1 Static RAM F eatu res F u n ctio n a l D escrip tio n • I'htr CY7C1U7'\ is a high-perform ance CM OS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by ai active LOW chip enable

Contextual Info: CY7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention — 100 n\V • Automatic power-down when

transistor 107A equivalent

Abstract: CY7C1007 CY7C107
Contextual Info: CY7C107 CY7C1007 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

CY7C1071DV33

Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 83.3 MHz ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power

transistor 107A equivalent

Abstract: CY7C107A
Contextual Info: fax id: 1058 1CY 7C10 7A PRELIMINARY CY7C107A 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected.

Contextual Info: CYPRESS 1M x 1 Static RAM Features F unctional D escription • High speed The CY7C107A is a high-perform ance CM O S static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable CE and three-state drivers. The device

Contextual Info: CY7C107 P R E L IM IN A R Y ’ ^ c ip R E S S 1M x 1 Static RAV RAM SEMICONDUCTOR Features Functional Description • H ig h s p e e d T h e C Y 7 C 1 0 7 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d as 1,048,576 w o rd s by 1 b it. E a sy m e m o ry e x p a n sio n is

CY7C1071AV33

Contextual Info: PRELIMINARY CY7C1071AV33 32-Mbit 2M x 16 Static RAM Features Low Enable (BLE) is LOW, then data from the I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A20). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into

CY7C1072AV33

Abstract: VDDIO10
Contextual Info: PRELIMINARY CY7C1072AV33 32-Mbit 1M x 32 Static RAM Features specified on the address pins (A0 through A19). If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). Likewise, BC and BD correspond with the I/O

Contextual Info: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an

Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM

CY7C107B-25VC

Abstract: CY7C1007B CY7C107B
Contextual Info: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

CY7C107B-15VC

Abstract: CY7C1007B CY7C107B
Contextual Info: CY7C107B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

Contextual Info: CY7C107 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 1,048,576 x 1 Static R /W RAM Features F u nctional D escription • High speed T h e CY 7C107 is a high-perform ance C M O S static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is

Contextual Info: CY7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns T he C Y 7C107A is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is p rovided by an active L O W chip enable

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed The CY7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance

CY7C107A

Contextual Info: 1M x 1 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power T he CY7C107A is a high-perform ance CM OS static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is

CY7C1072AV33

Contextual Info: PRELIMINARY CY7C1072AV33 32-Mbit 1M x 32 Static RAM Features specified on the address pins (A0 through A19). If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). Likewise, BC and BD correspond with the I/O

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1 M x 1 Static RAM 1-Mbit (1 M × 1) Static RAM Features Functional Description • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC ■ The CY7C107D [1] and CY7C1007D [1] are high-performance