7C107 Search Results

Contextual Info: 7C107 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 1,048,576 x 1 Static R /W RAM Features F u nctional D escription • High speed T h e CY 7C107 is a high-perform ance C M O S static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is

Contextual Info: 7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns T he C Y 7C107A is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is p rovided by an active L O W chip enable

Contextual Info: 7C107A: 11 -2 5 -9 1 Revision: Thursday, February 18,1993 MAR S 3 1993 = j= CYPRESS SEMICONDUCTOR 1M x 1 Static RAM Features Functional Description • Highspeed The 7C107A is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is

Contextual Info: fax id: 1058 7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY7C1007D-10VXI

Abstract: CY7C107D CY7C107D-10VXI
Contextual Info: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The 7C107D and CY7C1007D are high-performance

CY7C1007B

Abstract: CY7C107B
Contextual Info: 07B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

8C710

Abstract: 7111-C
Contextual Info: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9

Contextual Info: '/ 7C107A PRELIM INARY cypress IM x 1 Static RAM F eatu res F u n ctio n a l D escrip tio n • I'htr CY7C1U7'\ is a high-perform ance CM OS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by ai active LOW chip enable

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: 7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention — 100 n\V • Automatic power-down when

Contextual Info: Preliminary Data Sheet January 1992 AT&T a Microelectronics 7C107 High-Speed CMOS SRAM 1 Mbit 1 Mbit x 1 , Separate I/O Features • Low-power operation —Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs)

transistor 107A equivalent

Abstract: CY7C1007 CY7C107
Contextual Info: 7C107 CY7C1007 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

transistor 107A equivalent

Abstract: CY7C107A
Contextual Info: fax id: 1058 1CY 7C10 7A PRELIMINARY 7C107A 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected.

SOJ-28

Abstract: CY7C1007 CY7C107
Contextual Info: C Y 7 C 1 0 7 V CYPRESS C Y 7 C 1 0 0 7 1M x 1 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

A12C

Abstract: CY7C107
Contextual Info: CYPRESS SEMICONDUCTOR 4bE D n 250=^2 GG ObB GG fl Q C Y P -T'Ut'Z3-0 5 7C107 PRELIMINARY 'M CYPRESS SEMICONDUCTOR l M x l Static R/W RAM Features Functional Description • Highspeed — *AA = 25 ns • CMOS for optimum speed/power • Low active power — 825 mW

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: CYPRESS 1M x 1 Static RAM Features F unctional D escription • High speed The 7C107A is a high-perform ance CM O S static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable CE and three-state drivers. The device

Contextual Info: 7C107 P R E L IM IN A R Y ’ ^ c ip R E S S 1M x 1 Static RAV RAM SEMICONDUCTOR Features Functional Description • H ig h s p e e d T h e C Y 7 C 1 0 7 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d as 1,048,576 w o rd s by 1 b it. E a sy m e m o ry e x p a n sio n is

Contextual Info: 7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The 7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an

tPD10

Contextual Info: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Features Functional Description[1] • Pin- and function-compatible with 7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • •

CY7C107B-25VC

Abstract: CY7C1007B CY7C107B
Contextual Info: 07B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

CY7C107B-15VC

Abstract: CY7C1007B CY7C107B
Contextual Info: 7C107B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

Contextual Info: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C107B/CY7C1007B ■ High speed The 7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy