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    Teledyne e2v CY7C271-55LMB

    PROM, 32K X 8, 55 NS ACCESS TIME - Rail/Tube (Alt: CY7C271-55LMB)
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    Avnet Americas CY7C271-55LMB Tube 250
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    Teledyne e2v CY7C274-55LMB

    PROM, 32K X 8, 55 NS ACCESS TIME - Rail/Tube (Alt: CY7C274-55LMB)
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    Teledyne e2v QP7C199-55LMB

    STATIC RAM, 32K X 8, WITH OUTPUT ENABLE, - Rail/Tube (Alt: QP7C199-55LMB)
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    Teledyne e2v QP7C199L-55LMB

    STATIC RAM, 32K X 8, LOW-POWER, 55 NS AC - Rail/Tube (Alt: QP7C199L-55LMB)
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    Avnet Americas QP7C199L-55LMB Tube 250
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    Teledyne e2v QP7C198L-55LMB

    STATIC RAM, 32K X 8, LOW-POWER, 55 NS AC - Rail/Tube (Alt: QP7C198L-55LMB)
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    Avnet Americas QP7C198L-55LMB Tube 250
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    55LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    Untitled

    Abstract: No abstract text available
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169

    Untitled

    Abstract: No abstract text available
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit AM104

    J300

    Abstract: J400 P300 P4C1024 P4C1024L
    Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply


    Original     		PDF P4C1024 --32-Pin P4C1024 576-bit J300 J400 P300 P4C1024L

    22-PIN

    Abstract: P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original     		PDF P4C187/P4C187L P4C187L P4C187 22-Pin 24-Pin 290x490 28-P400 SRAM111 P4C187 P4C187L

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    7C128

    Abstract: 2T911 14512B CY7C128-55PC CY7C128-35DC CY7C128 CY7C128-35PC CY7C128-55LC C1287 CY7C128-45
    Text: CYPRESS SEMICONDUCTOR MbE D ES SSÔTbbS 00 üb32 S E B C Y P CY7C128 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when deselected CMOS for optimum speed/power High speed — 35 ns Low active power — 660 mW commercial — 825 m\V (military)


    OCR Scan     		PDF CY7C128 CY7C128 CY7C128-55DC CY7C128-55LC CY7C128-55DMB -55LMB CY7C128-55KMB 00Qb331 7C128 2T911 14512B CY7C128-55PC CY7C128-35DC CY7C128-35PC C1287 CY7C128-45

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


    OCR Scan     		PDF CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140

    7c251

    Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
    Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-mil 600-mil CY7C254 384-word Y7C251 7c251 a1s smd smd code A1s smd diode code A1s 65WMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-m 600-mil CY7C251 CY7C254 384-word PROMs3802 CY7C254â

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    Untitled

    Abstract: No abstract text available
    Text: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns


    OCR Scan     		PDF 300-mil CY7G287 CY7C287 28-Lead 300-Mil) CY7C287

    P4C188

    Abstract: P4C188L
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


    OCR Scan     		PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin 22-Ptn P4C188 P4C188L 53625CC -35PC

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


    OCR Scan     		PDF P4C188/P4C188L 22-Pin 24-Pin 22-Pln P4C188 P4C188L P4C188 -20CM -20LM

    Z1213

    Abstract: CY7C132 CY7C136 CY7C146 zl12
    Text: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features


    OCR Scan     		PDF CY7C132/CY7C136 CY7C142/CY7C146 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin CY7C132/CY7C136/CY7C142/ CY7C146 Z1213 CY7C132 CY7C136 zl12

    7C251

    Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
    Text: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-mil 600-mil 384-word Y7C251 7C251 C2515 SMD DIODE A13 C251-5 CY7C251-45WC 01d smd code smd diode code A1s 5962-895370

    30l3l

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		PDF CY7C132/CY7C136 CY7C142/CY7C146 MASTERCY7CI32/CY7C136 CY7C132/ CY7C136; 52-pin CY7C142/CY7C146 30l3l

    CY7CI85

    Abstract: CY7C185A-55DMB
    Text: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and CY7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga­ written into the memory location specified


    OCR Scan     		PDF CY7C185A CY7C186A CY7C186A CY7C186A- 12DMB CY7C186A-12LM 7C186A- 15DMB CY7C186A--15LMB CY7CI85 CY7C185A-55DMB

    Untitled

    Abstract: No abstract text available
    Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical


    OCR Scan     		PDF P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L P4C1981/82 P4C1981L/82L

    LM35N

    Abstract: No abstract text available
    Text: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		PDF 70b2517 P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L 28-Pin LM35N

    1549T

    Abstract: EI96
    Text: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -


    OCR Scan     		PDF P4C1282/P4C1282L, P4C1281 /P4C1281L P4C1281/82 P4C1281L/82L P4C1281/L P4C1282/L -20PC -20JC -20CC 1549T EI96

    CY7C128A

    Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
    Text: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048


    OCR Scan     		PDF QQ0h332 CY7C128A CY7C128A consA-55DC CY7C128Aâ 55DMB 55LMB 7C128 CY7C128A-45DMB CY7C128A-55DMB

    P4C1258

    Abstract: O513
    Text: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs


    OCR Scan     		PDF P4C1258/P4C1258L P4C1258 P4C1258L P4C1258 P4C1258L 144-bit 64Kx4. TTL-compati1258/L -25PC -30PC O513