Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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Original
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
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PDF
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22-PIN
Abstract: P4C187 P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)
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Original
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P4C187/P4C187L
P4C187L
P4C187
22-Pin
24-Pin
290x490
28-P400
SRAM111
P4C187
P4C187L
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PDF
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24-Pin Plastic DIP
Abstract: smd code WZ P4C187 P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187L
P4C187
P4C187L
22-Pin
24-Pin
290x490
-12JI
-15PC
24-Pin Plastic DIP
smd code WZ
P4C187
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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P4C187
Abstract: P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEA TU R ES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal A cce ss and Cycle Times) -10/12/15/20/25 n s (Commercial) -15/20/25/35 n s (Military) Separate Data I/O
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
22-Pin
24-Pin
-12PC
-12JC
-12CC
-12LC
-15JC
P4C187L
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS à FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
22-Pin
24-Pin
290x490
-15LM
-20CM
-20LM
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PDF
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MCM6287
Abstract: MCM6287P MCM6287P35 MCM6287-25
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6287 64K x 1 Bit Static Random A ccess Memory The MCM6287 is a 65,536 bit static random access memory organized as 65,536 words of 1 bit, fabricated using Motorola's second-generation high-performance silicon-gate
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OCR Scan
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MCM6287
MCM6287
V01TSI
Numbers-MCM6287P25
MCM6287J25
MCM6287P35
MCM6287J35
MCM6287P
MCM6287-25
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PDF
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P4C187
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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Original
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
P4C187
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O
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OCR Scan
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P4C187/P4C187L
P4C187L
P4C187
P4CI87L
22-Pin
-24-Pin
22-Pi
-25PC
-25JC
-25DC
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
24-Pin
22-Pin
290x490
P4C18PC
-10JC
-12PC
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PDF
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Untitled
Abstract: No abstract text available
Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)
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Original
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FT6187/FT6187L
P4C187
FT6187L
FT6187L
22-Pin
24-Pin
290x490
28-Pin
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PDF
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CE-v1H
Abstract: P4C187 P4C187L smd resistor code
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS xi— - -FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
-22-Pin
24-Pin
22-Pin
290x490
-12PI
-15PI
CE-v1H
smd resistor code
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
P4C18C
-10JC
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PDF
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FT6187
Abstract: No abstract text available
Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)
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Original
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FT6187/FT6187L
FT6187L
P4C187
22-Pin
SRAM111
FT6187
FT6187L
Jan-08
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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Original
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P4C187/P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187L)
P4C187/P4C187L
536-bit
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PDF
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1S1211
Abstract: SDE Contactor P4C187 P4C187L
Text: PERFORMANCE SEMICONDUCTOR SOE D • 7 0 b 2 5T 7 G 0 0 1 Ô 4 5 453 H P S C P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times)
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OCR Scan
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
-10PC
-12PC
-15PC
-20PC
-25PC
-10JC
1S1211
SDE Contactor
P4C187
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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Untitled
Abstract: No abstract text available
Text: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)
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OCR Scan
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Q00QST5
P4G187/P4C187L
P4C187
P4C187L
-12PC
-12JC
-12CC
-12LC
-15PC
-15JC
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PDF
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