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    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original
    P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


    Original
    P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit PDF

    22-PIN

    Abstract: P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original
    P4C187/P4C187L P4C187L P4C187 22-Pin 24-Pin 290x490 28-P400 SRAM111 P4C187 P4C187L PDF

    24-Pin Plastic DIP

    Abstract: smd code WZ P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original
    P4C187/P4C187L P4C187L P4C187 P4C187L 22-Pin 24-Pin 290x490 -12JI -15PC 24-Pin Plastic DIP smd code WZ P4C187 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original
    P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550 PDF

    P4C187

    Abstract: P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEA TU R ES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal A cce ss and Cycle Times) -10/12/15/20/25 n s (Commercial) -15/20/25/35 n s (Military) Separate Data I/O


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    P4C187/P4C187L P4C187 P4C187L 22-Pin 24-Pin -12PC -12JC -12CC -12LC -15JC P4C187L PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS à FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O


    OCR Scan
    P4C187/P4C187L P4C187 P4C187L 22-Pin 24-Pin 290x490 -15LM -20CM -20LM PDF

    MCM6287

    Abstract: MCM6287P MCM6287P35 MCM6287-25
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6287 64K x 1 Bit Static Random A ccess Memory The MCM6287 is a 65,536 bit static random access memory organized as 65,536 words of 1 bit, fabricated using Motorola's second-generation high-performance silicon-gate


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    MCM6287 MCM6287 V01TSI Numbers-MCM6287P25 MCM6287J25 MCM6287P35 MCM6287J35 MCM6287P MCM6287-25 PDF

    P4C187

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


    Original
    P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit P4C187 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O


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    P4C187/P4C187L P4C187L P4C187 P4CI87L 22-Pin -24-Pin 22-Pi -25PC -25JC -25DC PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)


    OCR Scan
    P4C187/P4C187L P4C187 P4C187L P4C187L 24-Pin 22-Pin 290x490 P4C18PC -10JC -12PC PDF

    Untitled

    Abstract: No abstract text available
    Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original
    FT6187/FT6187L P4C187 FT6187L FT6187L 22-Pin 24-Pin 290x490 28-Pin PDF

    CE-v1H

    Abstract: P4C187 P4C187L smd resistor code
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS xi— - -FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)


    OCR Scan
    P4C187/P4C187L P4C187 P4C187L P4C187L -22-Pin 24-Pin 22-Pin 290x490 -12PI -15PI CE-v1H smd resistor code PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)


    OCR Scan
    P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 P4C18C -10JC PDF

    FT6187

    Abstract: No abstract text available
    Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original
    FT6187/FT6187L FT6187L P4C187 22-Pin SRAM111 FT6187 FT6187L Jan-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


    Original
    P4C187/P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187L) P4C187/P4C187L 536-bit PDF

    1S1211

    Abstract: SDE Contactor P4C187 P4C187L
    Text: PERFORMANCE SEMICONDUCTOR SOE D • 7 0 b 2 5T 7 G 0 0 1 Ô 4 5 453 H P S C P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times)


    OCR Scan
    P4C187/P4C187L P4C187 P4C187L P4C187L -10PC -12PC -15PC -20PC -25PC -10JC 1S1211 SDE Contactor P4C187 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original
    P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550 PDF

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)


    OCR Scan
    Q00QST5 P4G187/P4C187L P4C187 P4C187L -12PC -12JC -12CC -12LC -15PC -15JC PDF