Untitled
Abstract: No abstract text available
Text: P4C1299/P4C1299L ULTRA HIGH SPEED 64K X 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C1299L High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs
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Original
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P4C1299/P4C1299L
P4C1299L)
28-Pin
350x550
P4C1299
P4C1299L
144-bit
SRAM144
P4C1299/P4C1299L
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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P4C1281
Abstract: P4C1258
Text: P4C1281/P4C1282 ULTRA HIGH SPEED 64K X 4 cmos STATIC RAMS FEATURES Full CMOS, 6T Cell Separate Inputs and Outputs High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Industrial) – 20/25/35/45 ns (Military) Low Power Operation
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Original
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P4C1281/P4C1282
P4C1281
P4C1282
28-Pin
144-bit
64Kx4)
P4C1258,
P4C1258
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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Original
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
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PDF
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P4C1256L
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O
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Original
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P4C1256L
70mA/85mA
28-Pin
350x550mil)
32-Pin
450x550mil)
P4C1256L
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PDF
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22-PIN
Abstract: P4C187 P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)
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Original
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P4C187/P4C187L
P4C187L
P4C187
22-Pin
24-Pin
290x490
28-P400
SRAM111
P4C187
P4C187L
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B
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Original
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P4C1981/1981L,
P4C1982/1982L
Oct-05
Aug-06
SRAM114
P4C1981
P4C198L,
P4C1982
P4C1982L
SRAM114
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Original
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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P4C1981
Abstract: P4C198 P4C1981L P4C1982L
Text: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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Original
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P4C1981/P4C1981L,
P4C1982/P4C1982L
P4C1981L/1982L
P4C1981/L
P4C1982/L
28-Pin
SRAM114
P4C1981/1981L,
P4C1981
P4C198
P4C1981L
P4C1982L
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PDF
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P4C1299
Abstract: No abstract text available
Text: P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C1299L High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs
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Original
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P4C1299/P4C1299L
P4C1299L)
28-Pin
350x550
P4C1299
P4C1299L
144-bit
SRAM144
P4C1299/P4C1299L
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PDF
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P4C187
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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Original
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
P4C187
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1298/P4C1298L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs
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Original
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P4C1298/P4C1298L
28-Pin
350x550
P4C1298/L
144-bit
AM135
P4C1298/L
SRAM135
P4C1298/P4C1298L
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PDF
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Untitled
Abstract: No abstract text available
Text: FT61981/FT61981 L FT61982/FT61982(L) ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current (FT61981L/1982L Military) Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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Original
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FT61981/FT61981
FT61982/FT61982
FT61981L/1982L
FT61981/L
FT61982/L
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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Original
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P4C1981/P4C1981L,
P4C1982/P4C1982L
P4C1981L/1982L
P4C1981/L
P4C1982/L
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: FT61981/FT61981L FT61982/FT61982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT61981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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Original
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FT61981/FT61981L
FT61982/FT61982L
FT61981L/1982L
FT61981/L
FT61982/L
28-Pin
FT1982/FT61982L
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical
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OCR Scan
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P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
P4C1981L/1982L
P4C1981/L
P4C1982/L
P4C1981/82
P4C1981L/82L
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PDF
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LM35N
Abstract: No abstract text available
Text: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times
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OCR Scan
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70b2517
P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
P4C1981L/1982L
P4C1981/L
P4C1982/L
28-Pin
LM35N
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PDF
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1549T
Abstract: EI96
Text: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -
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OCR Scan
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P4C1282/P4C1282L,
P4C1281
/P4C1281L
P4C1281/82
P4C1281L/82L
P4C1281/L
P4C1282/L
-20PC
-20JC
-20CC
1549T
EI96
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PDF
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1s34
Abstract: P4C198 P4C1981 P4C1981L P4C1982L
Text: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)
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OCR Scan
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70b2S17
P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
Active-12
P4C1981/82
P4C1981L/82L
P4C1981L/1982L
1s34
P4C198
P4C1981L
P4C1982L
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PDF
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P4C198
Abstract: P4C1981 P4C1981L P4C1982L
Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)
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OCR Scan
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P4C1981
/P4C1981L,
P4C1982/P4C1982L
P4C1981/1981L
P4C1981L/82L
P4C1981L/1982L
P4C1981/L
P4C1982/L
-10PC
-10JC
P4C198
P4C1981L
P4C1982L
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER CSMA_ CSTA 3 8 0 7 / 6 3 A. .1 00 A BLOCKS CSTA 3 8 0 V / 160 A . . .3 2 0 A CST2_ CST2-V_CSTP2 TYPE Includes : working voltage St n o m i n a l current CSMA 220V (380V)/ 63A CSMA 220V(380V)/ 80A
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OCR Scan
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/160A
/200A
/250A
220V080V)
/320A
/1170A
/1900A
80V/100A
80V/160A
80V/200A
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)
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OCR Scan
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P4C1981
/P4C1981L,
P4C1982/P4C1982L
L/1982L
P4C1981/L
P4C1982/L
P4C1981/1981L
P4C1981L/82L
-10PC
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PDF
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Untitled
Abstract: No abstract text available
Text: PERFORMANCE SEMICONDUCTOR D3E D | 7Db25T7 □□□•□353 3 IUM1IMÂIRY P4C198/P4C198L P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEBRUARY 1988 FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times
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OCR Scan
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7Db25T7
P4C198/P4C198L
P4C198A/P4C198AL
P4C198/198A
P4C198L/198AL
Appro20
-20PC
-20CC
-20LC
-25PC
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PDF
|
Untitled
Abstract: No abstract text available
Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS Xr FEATURES • Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 |iA Typical
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OCR Scan
|
P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
P4C1981/82
P4C1981L/1982L
P4C1981/L
P4C1982/L
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PDF
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