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Infineon Technologies AG CY7C1081DV33-12BAXI IC SRAM 64MBIT PARALLEL 48FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C1081DV33-12BAXI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC CY7C1089DV33-12BAXI IC SRAM 64MBIT PARALLEL 48FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C1089DV33-12BAXI	Bulk			3	1 - 10 $144.45 100 $144.45 1000 $144.45 10000 $144.45	Buy Now
Cypress Semiconductor CY7C1089DV33-12BAXI CY7C1089DV33-12BAXI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	CY7C1089DV33-12BAXI		380		3	1 - 10 $173.6125 100 $163.2 1000 $147.575 10000 $147.575	Buy Now
Rochester Electronics	CY7C1089DV33-12BAXI		380		1	1 $138.89 10 $138.89 100 $130.56 1000 $118.06 10000 $118.06	Buy Now
Cypress Semiconductor CY7C10820VC Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	CY7C10820VC		445			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CY7C108 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
CY7C1081DV33-12BAXI	Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 64MBIT 12NS 48FBGA	Original	PDF
CY7C108-25	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
CY7C108-25DC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-25DMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-25LC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-25LMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-35	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
CY7C108-35DC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-35DMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-35LC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-35LMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-45	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
CY7C108-45DC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-45DMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF

CY7C108-45LC	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C108-45LMB	Cypress Semiconductor	131,072 x 8 Static R/W RAM	Scan	PDF
CY7C1088	Cypress Semiconductor	128K x 9 Static RAM	Original	PDF
CY7C1088-12	Cypress Semiconductor	128K x 9 Static RAM	Scan	PDF
CY7C1088-12VC	Cypress Semiconductor	SRAM GP Single Port	Original	PDF
CY7C1088-15	Cypress Semiconductor	128K x 9 Static RAM	Scan	PDF

CY7C108 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)
CY7C1088 Abstract: o428 IO113 8A2512 Text: ADVANCED INFORMATION CY7C1088 128K x 9 Static RAM Features D D D D D D Functional Description High speed Ċ The CY7C1088 is a highĆperformance CMOS static RAM organized as 131,072 words by 9 bits. Easy memory expansion is provided by an active LOW chip enable	Original	PDF	CY7C1088 CY7C1088 32pin 7C1088-12 7C1088-15 7C1088-20 7C1088-25 o428 IO113 8A2512
CY7C1089DV33 Abstract: No abstract text available Text: CY7C1089DV33 64-Mbit 8M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1089DV33 64-Mbit CY7C1089DV33
Untitled Abstract: No abstract text available Text: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1089DV33 64-Mbit CY7C1089DV33
CY7C1081DV33 Abstract: No abstract text available Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)
CY7C1081DV33-12BAXI Abstract: No abstract text available Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15) CY7C1081DV33-12BAXI
Untitled Abstract: No abstract text available Text: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1089DV33 64-Mbit CY7C1089DV33
Untitled Abstract: No abstract text available Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)	Original	PDF	CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)
SRAM timing Abstract: CY7C1088 PM7322 PM7323 PMC-940904 RCMP200 Text: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 1 PM7323 RCMP-200 ASYNCHRONOUS SRAM FOR RCMP-200 PM7323 ASYNCHRONOUS SRAM FOR RCMP-200 Issue 1: April 1, 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300 Proprietary and Confidential	Original	PDF	PM7323 RCMP-200 PM7323 PMC-960338 SRAM timing CY7C1088 PM7322 PMC-940904 RCMP200
EME-6300H Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199 Text: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:	Original	PDF	CY7C199 7C199C Jan/1995 MeC199 28-pin, 300-mil -1500V EME-6300H 6300H mos die CY7C1399 CY7C197 CY7C199
CY62256LL-PC Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113 Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2	Original	PDF	PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
CXK581020 Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25 Text: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum	Original	PDF	L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin CXK581020 L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
7C109 Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb Text: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power	OCR Scan	PDF	00Gb30b CY7C108 CY7C109 TheCY7C108 CY7C109 p9-45DC CY7C109-45PC CY7C109-45VC CY7C109-45DMB GG0b312 7C109 ddgt A14C C106 cy7c109-35dmb
a9ah Abstract: No abstract text available Text: CY7C1088 128K x 9 Static RAM ADVANCED INFORMATION Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention The CY7C1088 is a high-performance	OCR Scan	PDF	32-pin 400-mil CY7C1088 7C1088-12 7C1088-15 7C1088-20 7C1088-25 a9ah

7C109-35 Abstract: 7C108 Text: K 'ß CY7C108 CY7C109 AD VAN CED IN F O R M A TIO N SEMICONDUCTOR 131,072 x 8 Static R/W RAM Features F unctional D escription • High speed T h e CY7C108 and CY7C109 are high-per form ance C M O S static R A M s organized as 131,072 words by 8 bits. Easy m em ory expansion is provided by an active L O W chip	OCR Scan	PDF	CY7C108 CY7C109 8-00140-A 7C109-35 7C108
Untitled Abstract: No abstract text available Text: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex	OCR Scan	PDF	7C108 7C109 CY7C109
232Z2 Abstract: 109kc Text: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum	OCR Scan	PDF	L7C108/109) L7C108-L/109-L) MIL-STD-883, CY7C108/109, IDT71024/71B024, V1T5C1008, MCM6226A 62L26A, CXK581020 32-pin 232Z2 109kc
98-LD Abstract: No abstract text available Text: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns	OCR Scan	PDF	MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 98-LD
uPD23C4000 Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A	OCR Scan	PDF	64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Untitled Abstract: No abstract text available Text: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum	OCR Scan	PDF	MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C109 L7C109KC25*
Untitled Abstract: No abstract text available Text: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum	OCR Scan	PDF	MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 32-pin 108/9-J
CY7C1088 Abstract: No abstract text available Text: CYPRESS Features • • C M O S for optim um speed/pow er Low active power — 1020 mW • Low standby power — 250 mW • 2.0V d ata retention — 100 ^W • A vailable in p la stic 32-p in 4 00-m il SO J • A utom atic power-down when d eselected •	OCR Scan	PDF	32-pin 400-miI CY7C1088 7C1088â
EDI88128C-100 Abstract: EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs Text: - IM ïSÆEffl m £ tt £ CC CMOS x TAAC •ax ns) TCAC ■ax (ns) TOE nax (ns) TOH nin (ns) RAM ( 1 3 1 , 0 7 2 x 8 ) S t a t i c * a y / TOD ■ax (ns) TffP »in (ns) m 14 TDS nin (ns) TDH sin (ns) TIW) min (ns) TttR nax (ns) VDD o r V C C (V) IW> max	OCR Scan	PDF	072x8) CY7CI08/9-25 CY7C108/9-35 CY7C108/9-45 HM628128LP/FP-7SL IM628128LP/FP-8SL HI628128LP/T-10 IM628128LP/M2 HM628128LP/T-7 HM628128LP/T-8 EDI88128C-100 EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs
a1012L Abstract: No abstract text available Text: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation	OCR Scan	PDF	L7C108/109 L7C108 L7C109 TheL7C108has reduc00 03/21/95-LDS 108/9-F a1012L

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CY7C108 Search Results

CY7C108 Price and Stock

Infineon Technologies AG CY7C1081DV33-12BAXI

Rochester Electronics LLC CY7C1089DV33-12BAXI

Cypress Semiconductor CY7C1089DV33-12BAXI

Cypress Semiconductor CY7C10820VC

CY7C108 Datasheets (25)

CY7C108 Datasheets Context Search

Untitled

CY7C1088

CY7C1089DV33

Untitled

CY7C1081DV33

CY7C1081DV33-12BAXI

Untitled

Untitled

SRAM timing

EME-6300H

CY62256LL-PC

CXK581020

7C109

a9ah

7C109-35

Untitled

232Z2

98-LD

uPD23C4000

Untitled

Untitled

CY7C1088

EDI88128C-100

a1012L