UPG101
Abstract: UPG100B UPG101B UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG101B
UPG101P
UPG101
24-Hour
UPG100B
UPG101B
UPG101P
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Untitled
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY
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UPG101B
UPG101P
UPG101P
b427525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT uPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿iPGIOOP and ¿iPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿iPGIOOP is low noise amplifier from 50 MHz to 3 GHz and ¿iPG101P is a medium power amplifier in the same
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uPG101P
iPG101P
jPG101
iPG101P
MIL-STD-883
iPG100B
iPG101B.
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT //PG100B, uPG101B WIDE-BAND AMPLIFIER The /¿PG100B and /¿PG101B are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. The /¿PG100B is low noise amplifier from 50 MHz to 3 GHz and /¿PG101B is a medium power amplifier in the
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uPG100B
uPG101B
PG100B
PG101B
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l06S
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY FEATURES_ • ULTRA WIDE BAND: 50 MHz to 3 GHz • MEDIUM POWER: +18 dBm TYP at f - 50 MHz to GHz Qf • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft
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UPG101B
UPG101P
UPG101
TA-V75
15turns
l06S
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Untitled
Abstract: No abstract text available
Text: SEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG101B UPG101P Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27±0.1 1.27±0.1 • MEDIUM POWER: + 18 dBm TYP at f = 50 M Hz to 3 GHz 0.4 (LEADS 1,3,5,7) (LEADS 2,4,6,8) 0.6 *
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UPG101B
UPG101P
UPG101
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UPG101B
Abstract: UPG100B UPG101 UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG101B
UPG101P
UPG101
24-Hour
UPG101B
UPG100B
UPG101P
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uPG101
Abstract: UPG101B PIAB PIAB CHIP UPG101P gp 532
Text: NEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG101B UPG101P Units in mm O UTLINE B08 • U L T R A W ID E B A N D : 50 MHz to 3 GHz 1.27+01 1.27+0.1 • M E D IU M P O W E R : + 18 dB m TYP at f = 50 M Hz to 3 GHz (LEADS 2.4,6,8) 0.6 '
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UPG101B
UPG101P
UPG101
PIAB
PIAB CHIP
UPG101P
gp 532
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Untitled
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY ULTRA WIDE BAND: 50 MHz to 3 GHz MEDIUM POWER: +18 dBm TYP at f = 50 MHz to GHz oo •D INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q HERMETICALLY SEALED PACKAGE ASSURES
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UPG101B
UPG101P
UPG101
UPG101P
or30nm
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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Untitled
Abstract: No abstract text available
Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6
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UPG100B
UPG101B
UPG103B
UPG110B
UPG100P
UPG101P
flB08
UPG503B
UPG506B
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101p1
Abstract: IC-3144
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same
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uPG100P
uPG101P
PG100P
PG101P
xPG101P
/xPG101P
101p1
IC-3144
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uPG101
Abstract: internal circuit diagram of choke G100B 101B ICL7660 mmic n5 UPG101B
Text: A r p . i CA TION NO TE APPLICATION THE WIDE BAND AM PLIFIERS /¿PG1 00B/^PG101B NOTE 1. GENERAL juPG100B/101 B is the GaAs MMIC GaAs Microwave Monolithic Integrated Circuit developed as the low noise wide band amplifier/medium power wide band amplifier.
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uPG100B
uPG101B
juPG100B/101
jUPG101
1987M
uPG101
internal circuit diagram of choke
G100B
101B
ICL7660
mmic n5
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C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
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UPC1677B
C1677
UPC1678B
C1678
UPG100B
UPG101B
UPG103B
24-Hour
C1678
c1677
UPC1678B
UPG100B
uPG101
MARKING 106
UPG101B
G100
G101
G103
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NEC Ga FET marking L
Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima
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GET-30749,
GET-30749
NE29200
NE674
uPG501B
uPG501P
uPG503B
uPG503P
uPG506B
NEC Ga FET marking L
tamagawa
gaas fet marking B
mmic amplifier marking code N5
NE272
FET marking code .N5
ne29200
NE23383B
NE292
gaas fet marking a
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prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
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