J499
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
28ances.
J499
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PTFB090901EA
Abstract: No abstract text available
Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced
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PTFB090901EA
PTFB090901FA
PTFB090901EA
PTFB090901FA
90-watt
H-37265-2
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Untitled
Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157SH
PTFC262157SH
H-34288G-4/2
c262157sh-gr1
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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SEK4
Abstract: No abstract text available
Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808FV
PTFC262808FV
280-watt
H-37275G-6/2
SEK4
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Untitled
Abstract: No abstract text available
Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output
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PXFC192207FH
PXFC192207FH
220-watt
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RC0603FR-710KL
Abstract: rc0603fr-072kl GMK107BJ105KA LM10500 NC7SZ125M5X AN-2080
Text: National Semiconductor Application Note 2080 Yang Zhang August 29, 2011 LM10500 Overview Applications The LM10500 is a 5 A Energy Management Unit EMU that actively reduces system level power consumption by utilizing a continuous, real-time, closed-loop Adaptive Voltage Scaling
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LM10500
AN-2080
RC0603FR-710KL
rc0603fr-072kl
GMK107BJ105KA
NC7SZ125M5X
AN-2080
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Untitled
Abstract: No abstract text available
Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path
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PXAC201602FC
PXAC201602FC
140-watt
H-37248-4
10ubstances.
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Untitled
Abstract: No abstract text available
Text: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,
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PTVA093002TC
PTVA093002TC
300-watt
50-ohm
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
pxac201202fc-gr1a
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Untitled
Abstract: No abstract text available
Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2496 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features
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PXAC261002FC
PXAC261002FC
100-watt
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Untitled
Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output
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PTAB182002TC
PTAB182002TC
180-watt
H-49248H-4
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Untitled
Abstract: No abstract text available
Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157FH
PTFC262157FH
H-34288G-4/2
c262157sh-gr1
48stances.
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Untitled
Abstract: No abstract text available
Text: PTAC260302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to
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PTAC260302FC
PTAC260302FC
30-watt
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IDT9020
Abstract: IDTP9030 IDTP9035 IDTP9020 schematic diagram of phone charger IWAS4832FFE 56LD
Text: Industry’s First Multi-Mode WPC Compliant Wireless Power Receiver IC Product Datasheet IDTP9020 Features Description • Single-Chip 5W Solution for Wireless Power Consortium WPC “Qi” Compliant Power Receiver • Conforms to WPC Specification Version 1.1
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IDTP9020
IDTP9020
IDT9020
IDTP9030
IDTP9035
schematic diagram of phone charger
IWAS4832FFE
56LD
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AN2042
Abstract: AN-2042 ECJ1VC2A101J NC7SZ125 UMK107B7104KA-T UMK325C7106MM-T UMK325C7106MMT C3216X7R1E105K GMK107BJ105KA LM21305
Text: National Semiconductor Application Note 2042 Yang Zhang March 17, 2010 LM21305 Overview The device features internal over voltage protection OVP and over current protection (OCP) circuits for increased system reliability. A precision enable pin and integrated UVLO
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LM21305
28-pin
AN-2042
AN2042
AN-2042
ECJ1VC2A101J
NC7SZ125
UMK107B7104KA-T
UMK325C7106MM-T
UMK325C7106MMT
C3216X7R1E105K
GMK107BJ105KA
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UMK325C7106MMT
Abstract: No abstract text available
Text: PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package
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PXAC241702FC
PXAC241702FC
UMK325C7106MMT
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Untitled
Abstract: No abstract text available
Text: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261202FC
PXAC261202FC
120-watt
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: Bill of Materials for the NCV8853GEVB Evaluation Board Designator Quantity C1 C2, C3, C4 C5 C6 C7 C8 D1 L1 Q1 R1 R2 R3, R5 R4 R6 TP2, TP3, TP4, TP5, TP6, TP7, TP8, TP9, TP10 U1 1 3 1 1 1 1 1 1 1 1 1 2 1 DNP 9/7/2012 Description Value CAP CER 0.1UF 50V 10% X7R 0603
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NCV8853GEVB
6800PF
6800pF
470PF
470pF
100UF
100uF
1/10W
GCM188R71H104KA57D
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4871I
Abstract: No abstract text available
Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208SV
PTFB213208SV
320-watt
H-37275G-6/2
4871I
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