Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTAB182002TC Search Results

    SF Impression Pixel

    PTAB182002TC Price and Stock

    Infineon Technologies AG PTAB182002TCV2R250XUMA1

    RF MOSFET LDMOS 28V H-37248-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTAB182002TCV2R250XUMA1 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG PTAB182002TCV2R250X

    Power LDMOS Transistor N-Channel 65V 4-Pin H-49248H T/R - Tape and Reel (Alt: PTAB182002TCV2R250)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTAB182002TCV2R250X Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    PTAB182002TC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTAB182002TCV2R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-49248H-4 Original PDF
    PTAB182002TCV2R250XUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTAB182002TCV2XWSA1 Infineon Technologies IC RF FET LDMOS 190W H-49248H-4 Original PDF

    PTAB182002TC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output


    Original     		PDF PTAB182002TC PTAB182002TC 180-watt H-49248H-4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805


    Original     		PDF PTAB182002TC PTAB182002TC 190-watt

    Untitled

    Abstract: No abstract text available
    Text: PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805


    Original     		PDF PTAB182002TC PTAB182002TC 180-watt H-44248H-4

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA