PTAB182002TC Search Results
PTAB182002TC Price and Stock
Infineon Technologies AG PTAB182002TCV2R250XUMA1RF MOSFET LDMOS 28V H-37248-4 |
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PTAB182002TCV2R250XUMA1 | Reel |
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Infineon Technologies AG PTAB182002TCV2R250XPower LDMOS Transistor N-Channel 65V 4-Pin H-49248H T/R - Tape and Reel (Alt: PTAB182002TCV2R250XUMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTAB182002TCV2R250X | Reel | 250 |
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PTAB182002TC Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| PTAB182002TCV2R250XTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-49248H-4 | Original | |||
| PTAB182002TCV2R250XUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | |||
| PTAB182002TCV2XWSA1 |
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IC RF FET LDMOS 190W H-49248H-4 | Original |
PTAB182002TC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output |
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PTAB182002TC PTAB182002TC 180-watt H-49248H-4 | |
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Contextual Info: Preliminary PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 |
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PTAB182002TC PTAB182002TC 190-watt | |
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Contextual Info: PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 |
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PTAB182002TC PTAB182002TC 180-watt H-44248H-4 | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
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PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA |