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    Infineon Technologies AG PXAC261202FCV1XWSA1

    RF MOSFET LDMOS 28V H-37248-4
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    DigiKey PXAC261202FCV1XWSA1 Tray
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    Infineon Technologies AG PXAC261202FCV1R250XTMA1

    RF MOSFET LDMOS 28V H-37248-4
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    PXAC261202FC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PXAC261202FCV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 2.61GHZ Original PDF
    PXAC261202FCV1S250XTMA1 Infineon Technologies FET RF 2CH 65V 2.61GHZ Original PDF
    PXAC261202FCV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 2.61GHZ Original PDF

    PXAC261202FC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,


    Original     		PDF PXAC261202FC PXAC261202FC 120-watt

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA