TSOP 48 DQS Search Results

Contextual Info: DISTINCTIVE CHARACTERISTICS • Single 3.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts 48-pin TSOP Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

Contextual Info: FLASHMEMORY CMOS • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type

G1117S

Abstract: MT4LC1M165
Contextual Info: ADVANCE ft MT4LC1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44

64Mx16bit

Contextual Info: White Electronic Designs W3E64M16S-XSTX 64Mx16bit DDR SDRAM FEATURES Double-data-rate architecture; two data transfers per clock cycle All inputs except data & DM are sampled at the positive going edge of the system clock CK Bidirectional data strobe (DQS)

TSOP 86 Package

Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
Contextual Info: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16

Contextual Info: PRELIMINARY‡ 128Mb: x16 GRAPHICAL DDR SDRAM ADDENDUM DOUBLE DATA RATE DDR SDRAM MT46V8M16 – 2 MEGX16X4 BANKS Features General Description • 200 MHz Clock, 400 Mb/s/p data rate • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data

Contextual Info: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz

TSOP 66 Package

Abstract: W3E16M72SR-XBX ddr 3 tsop TSOP 48 Dqs
Contextual Info: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz

Contextual Info: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features VA NC ED Registered for enhanced performance of bus speeds of 250, 225, and 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

TH58NVG2S3

Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
Contextual Info: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60

NT256D64SH8C0GM-6K

Abstract: DDR333 DDR400 PC2700 PC3200
Contextual Info: NT256D64SH8C0GM / NT128D64SH4C0GM 256MB and 128MB PC3200 and PC2700 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333 256M bit C Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • DRAM DLL aligns DQ and DQS transitions with clock transitions

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

MT16LD464AG

Contextual Info: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant

NT512D64S8HC0G-5T

Abstract: NT256D64S88C0G-5T DDR400 PC2700 PC3200 256MB 32Mx64 CL2
Contextual Info: NT512D64S8HC0G / NT256D64S88C0G 512MB and 256MB PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 256M bit C Die device Features • 184 Dual In-Line Memory Module DIMM • DRAM DLL aligns DQ and DQS transitions with clock transitions

Contextual Info: NT512D64S8HC0G / NT256D64S88C0G NT512D64S8HC0GY / NT256D64S88C0GY Green 512MB and 256MB PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 256M bit C Die device Features • 184 Dual In-Line Memory Module (DIMM) • DRAM DLL aligns DQ and DQS transitions with clock transitions

EM658160TS-4

Abstract: EM658160 EM658160TS-5 e-tron
Contextual Info: EtronTech EM658160 4M x 16 DDR Synchronous DRAM SDRAM Etron Confidential (Rev. 1.1 Jan./2002) Features Pin Assignment (Top View) • • • • • • • • Fast clock rate: 300/285/250/200/166/143/125MHz Differential Clock CK & /CK Bi-directional DQS

Irvine Sensors Corporation

Contextual Info: Data Sheet Part No. ISDD64M8STC Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

TSOP 54 PIN footprint

Abstract: 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT
Contextual Info: Data Sheet Part No. ISDD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

tsop sensor

Abstract: tsop sensors nand flash 128mbit
Contextual Info: Data Sheet Part No. ISDD32M8STB Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

dram 72-pin simm 128mb

Abstract: PC133 registered reference design type 760 t85
Contextual Info: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant

K4H281638

Abstract: ISDD16M16STD Toshiba nand flash dqs 256-MBIT TSOP 54 PIN footprint
Contextual Info: Data Sheet Part No. ISDD16M16STD Irvine Sensors Corporation Microelectronics Products Division 256Mbit 16M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

K4H561638

Abstract: tsop sensors
Contextual Info: Data Sheet Part No. ISDD32M16STD Irvine Sensors Corporation Microelectronics Products Division 512Mbit 32M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a