800MM2 Search Results

Contextual Info: 8Mx72 SDRAM & 1Mx8 Flash Multi-Chip Package Optimum Density and Performance in one Package WEDPNF8M721V-XBX • Designed to complement PowerPC 750 and high performance memory controllers see page 2 for typical application block diagram • PACKAGE: 32x25mm, 255 Plastic Ball Grid Array (PBGA), 800mm2

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of

W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

WEDPN16M72V-XBX

Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
Contextual Info: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

FD19

Abstract: BY12 FA147
Contextual Info: WEDPNF8M722V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

BUSBAR calculation free

Abstract: EN27779 BUSBAR calculation earth BUSBAR calculation online ups battery charger project 3 phase BUSBAR IEC 60439-1 62040-2 62040-1 ral 7035
Contextual Info: SPECIFICATION FOR TYPE TESTED, LOW-VOLTAGE CRITICAL POWER SYSTEM General 1. 1.1 1.2.1 1.2.2 1.3. 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 2 3 3.1.1 3.1.2 3.1.3 3.1.4 3.1.5 3.1.6 3.1.7 3.1.8 3.1.9 3.2 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 General Characteristics Switchboard

2907 TRANSISTOR

Abstract: XC6420 USP-6B04
Contextual Info: XC6420 Series ETR0352-006 150mA Small Dual LDO Regulator with ON/OFF Switch •GENERAL DESCRIPTION The XC6420 series is a small dual CMOS LDO regulator with 2-channel 150mA outputs. The series features high speed, high accuracy, high ripple rejection and low dropout voltage. The series is capable of high density board installation by the

insulated cable 240 mm2

Contextual Info: PRESENCE ∙ PRODUCTS ∙ PERFORMANCE ∙ PEOPLE O n e C o m pa n y — C o n n ec tin g th e wo r ld Powerful Presence ∙ Products ∙ Performance ∙ People With more than 13,000 associates on six continents, General Cable is a global leader in the development, design, manufacture, marketing and

Contextual Info: 電 力 事 業 部 Power Cable Division 概 況 電力事業部は，66kVから500kVまでの超高圧地中あるいは海底送電用の電力ケーブルと，その機器部品を 取扱っており，電力会社の基幹電力輸送をになう送電システムを構成する製品群を製造，布設している．こ

Infineon X-GOLD 110

Abstract: Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi
Contextual Info: Product Brief X-GOLD 618 TM Cost efficient HSPA Baseband for Multimedia enabled Cellular Phones Main Features THE Infineon X-GOLD 618 is a cellular system on chip comprising the 2G/3G digital and analog baseband and the power management functions monolithically integrated in 65nm CMOS technology. It is Infineon’s 3rd

Contextual Info: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive

Contextual Info: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs W364M72V-XSBX PRELIMINARY* 64Mx72 Synchronous DRAM FEATURES BENEFITS High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

7812

Abstract: VCCQ15
Contextual Info: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)

W3E32M72S-XBX

Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)

WEDPND16M72S-XBX

Abstract: WEDPND8M72S-XBX 8M16M
Contextual Info: 8M/16M x 72 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPND8M72S-XBX WEDPND16M72S-XBX VA N CE DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V Bidirectional data strobe DQS per byte

AS4DDR16M72PBG

Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
Contextual Info: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count