MT48LC16M16
Abstract: 57256 A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design mt48lc16m16a2fg-7e
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC66-,
PC100-,
PC133-compliant
192-cycle
60-ball,
8x16mm
MT48LC16M16
57256
A11 MARKING CODE
MT48LC16M16A2
MT48LC32M8A2
MT48LC64M4A2
PC133 registered reference design
mt48lc16m16a2fg-7e
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PDF
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09005aef8091e6a8
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Options • PC100- and PC133-compliant
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
192-cycle
auto08-368-3900
09005aef8091e6d1/Source:
09005aef8091e6a8
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PDF
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PC133 registered reference design
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant
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Original
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256Mb:
PC66-,
PC100-,
PC133-compliant
192-cycle
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
MT48LC64M4A2FB-75
MT48LC64M4A2FB-7E
PC133 registered reference design
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PDF
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256MSDRAM
Abstract: celestica
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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Original
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
256MSDRAM
celestica
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PDF
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DQ131
Abstract: MT48LC16M16A2TG8E
Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron
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OCR Scan
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192-cycle
MT48LC64M4A2
MT48LC32M8A2
54-PIN
256Mb
256MSDRAM
DQ131
MT48LC16M16A2TG8E
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PDF
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pcb diagram of mini ups system
Abstract: 3 pin mini mold transistor 64 to 4 Mux diode MARKING A9 2048 x 16 x 4 banks pc133 sdram marking of m7 diodes marking code C9 cmos 4 bit counter Gate Drive Characteristics
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds Features Figure 1: Pin Assignment Top View
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
54-Pin
PC66-,
PC100-,
PC133-compliant
192-cycle
09005aef8091e6a8
pcb diagram of mini ups system
3 pin mini mold transistor
64 to 4 Mux
diode MARKING A9
2048 x 16 x 4 banks
pc133 sdram
marking of m7 diodes
marking code C9
cmos 4 bit counter
Gate Drive Characteristics
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PDF
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AR0130
Abstract: spansion altera TR0150 TSK3000 EP2C35F672C8 desktop motherboard schematic diagram DB31 SRAM256KX16 Altera Cyclone II SRAM_256KX16
Text: Technical Reference for Altium's Altera ® Cyclone II Daughter Board DB31 Summary This reference document provides detailed information on Altium's Altera Cyclone II daughter board DB31, including the physical FPGA device it offers and any additional resources available to an FPGA design targeting that device.
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Original
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TR0150
NB2DSK01.
NB2DSK01
AR0130
spansion altera
TR0150
TSK3000
EP2C35F672C8
desktop motherboard schematic diagram
DB31
SRAM256KX16
Altera Cyclone II
SRAM_256KX16
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PDF
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MT48LC16M16A2TG-75D
Abstract: 09005aef8091e6d1 MT48LC16M16A2 MT48LC16M16A2TG-75 MT48LC32M8A2 MT48LC64M4A2 TN-48-05 MT48LC16M16A-2TG75D
Text: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Options • PC100- and PC133-compliant
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Original
|
256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
192-cycle
09005aef8091e6d1/Source:
09005aef8091e6a8
256MSDRAM
MT48LC16M16A2TG-75D
09005aef8091e6d1
MT48LC16M16A2
MT48LC16M16A2TG-75
MT48LC32M8A2
MT48LC64M4A2
TN-48-05
MT48LC16M16A-2TG75D
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds Features Figure 1: Pin Assignment Top View
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
54-Pin
PC66-,
PC100-,
PC133-compliant
09005aef8091e6d1/Source:
09005aef8091e6a8
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PDF
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L-23014-01
Abstract: L24002 mitsubishi cdram
Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh
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Original
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L-21001-0B
L-21002-0I
x4/x8/x16
L-23014-01
L24002
mitsubishi cdram
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PDF
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64V32300GU-8-A
Abstract: No abstract text available
Text: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &
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Original
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64/72V32300GU
64/72-Bit
168-pin
PC100
PC133
Aprl99MODULE
256Mbit
64V32300GU-8-A
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PDF
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HYS72V1
Abstract: No abstract text available
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions
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Original
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64V8301GU
64-Bit
168-pin
PC100
PC133
Aprl99MODULE
HYS72V1
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PDF
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256MDDRSDRAM
Abstract: B22XX
Text: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,
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Original
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64/72V64220GU
64/72-Bit
168-pin
PC100
PC133
256MDDRSDRAM
B22XX
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PDF
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Untitled
Abstract: No abstract text available
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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Original
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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OCR Scan
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MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PCI00-compliant;
54-PIN
256Mb:
256MSDRAM
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PDF
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09005aef8091e6d1
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Options • PC100-, and PC133-compliant
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-,
PC133-compliant
192-cycle
Param-3900
09005aef8091e6d1/Source:
09005aef8091e6a8
09005aef8091e6d1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/sdram Features Options
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-,
PC133-compliant
192-cycle
09005aef80725c0b/Source:
09005aef806fc13c
256MSDRAM
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PDF
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tube az1
Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10
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Original
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39S256400/800/160T
256-MBit
SPT03933
tube az1
smd CAY
smd marking T22
smd transistor at t21
PC100-322-620
MARKING AX5
by1 SMD
marking RBY
transistor smd marking mx
transistor SMD t15
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PDF
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AR0130
Abstract: TR0149 TSK3000 spartan3 fpga development boards TSK3000A xilinx spartan 3 XILINX SPARTAN XC3S1500 nanoboard XC3S1500 SPARTAN-3 BOARD desktop motherboard schematic
Text: Technical Reference for Altium's Xilinx Spartan -3 Daughter Board DB30 Summary Technical Reference This reference document provides detailed information on Altium's Xilinx Spartan-3 daughter board DB30, including the physical FPGA device it offers and any additional
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Original
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TR0149
NB2DSK01.
NB2DSK01
AR0130
TR0149
TSK3000
spartan3 fpga development boards
TSK3000A
xilinx spartan 3
XILINX SPARTAN XC3S1500
nanoboard
XC3S1500 SPARTAN-3 BOARD
desktop motherboard schematic
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PDF
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57256
Abstract: A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC66-,
PC100-,
PC133-compliant
192-cycle
60-ball,
8x16mm
57256
A11 MARKING CODE
MT48LC16M16A2
MT48LC32M8A2
MT48LC64M4A2
PC133 registered reference design
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets
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Original
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256Mb:
PC66-,
PC100-,
PC133-compliant
192-cycle
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
MT48LC64M4A2FB-75
MT48LC64M4A2FB-7E
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PDF
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MT48LC16M16A2TG8E
Abstract: PC133 registered reference design MT48LC16M16A2TG-8E
Text: ADVANCE 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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Original
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256Mb:
PC66-,
PC100-
PC133-compliant
192-cycle
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
256MSDRAM
MT48LC16M16A2TG8E
PC133 registered reference design
MT48LC16M16A2TG-8E
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PDF
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39S256160T
Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10
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Original
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39S256400/800/160T
256-MBit
SPT03933
39S256160T
PC100-322-620
MARKING AX5
SMD MARKING T20
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PDF
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57256
Abstract: 61256 MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design MT48LC16M16A2TG-75 tp
Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds Features Figure 1: Pin Assignment Top View
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Original
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
54-Pin
PC66-,
PC100-,
PC133-compliant
192-cycle
025mm.
57256
61256
MT48LC16M16A2
MT48LC32M8A2
MT48LC64M4A2
PC133 registered reference design
MT48LC16M16A2TG-75 tp
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PDF
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