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    Panasonic Electronic Components 16SEPC100M-TSS

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    Panasonic Electronic Components 16SVPC100M

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    Panasonic Electronic Components 16SEPC100MW-S

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    Panasonic Electronic Components 2SEPC1000MX-S

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    Amphenol Advanced Sensors NPC-100T

    SENSOR 5.8PSIG 0.19"
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    PC100 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PC100 Samsung Electronics PC100 SDRAM MODULE Preliminary Original PDF
    PC-100 Signal Technology Phase Comparator (Detector) Original PDF
    PC100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PC100 Unknown Interface IC/Device Data Book (Japanese) Scan PDF
    PC100 Sharp 50 mA, VDE approved, long creepage distance type photocoupler Scan PDF
    PC-1000 Digital Voice Systems PC Based AMBE-1000 Vocoder Board Original PDF
    PC1000 Optellios POLARIZATION CONTROLLER Original PDF
    PC1000-FA Optellios POLARIZATION CONTROLLER Original PDF
    PC1000-FC Optellios POLARIZATION CONTROLLER Original PDF
    PC1000-SA Optellios POLARIZATION CONTROLLER Original PDF
    PC1000-SC Optellios POLARIZATION CONTROLLER Original PDF
    PC 100-100 HG Unknown ENCLOSURE HIGH BASE GREY COVER Original PDF
    PC 100-100 LT Unknown ENCLOSURE LOW BASE CLEAR COVER Original PDF
    PC10012 Nihon Inter Electronics DIODE MODULE 100A/1200 to 1600V Original PDF
    PC10012 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    PC 100-125 HG Unknown ENCLOSURE HIGH BASE GREY COVER Original PDF
    PC 100-125 HT Unknown ENCLOSURE HIGH BASE CLEAR COVE Original PDF
    PC10016 Nihon Inter Electronics DIODE MODULE 100A/1200 to 1600V Original PDF
    PC10016 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    PC100-222-620 Siemens 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module Original PDF

    PC100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin PDF

    M374S6453CTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PC133/PC100 M374S6453CTS M374S6453CTS 64Mx72 32Mx8, 400mil 168-pin PDF

    MT48LC4M32B2P

    Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
    Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive


    Original     		128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2 PDF

    MT48LC2M32B2P

    Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612 PDF

    K4S280832C-TC75

    Abstract: M374S1723CTS
    Text: M374S1723CTS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 2000 • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. REV. 0.1 July. 2000 M374S1723CTS PC133 Unbuffered DIMM


    Original     		M374S1723CTS PC133 PC100 M374S1723CTS 16Mx72 16Mx8, K4S280832C-TC75 PDF

    PC100F5

    Abstract: PD100F5 a157
    Text: FRD PC100F5 PD100F5 100A Avg 500 Volts •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PC 2 1 3 PD 2 1 3 ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PC100F5/PD100F5


    Original     		PC100F5 PD100F5 PC100F5/PD100F5 150VRM 25IFM 0A-di/dt50A/ PC100F5 PD100F5 a157 PDF

    mt48lc32m16a2p-75

    Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
    Text: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 192-cycle 09005aef809bf8f3/Source: 09005aef80818a4a 512MbSDRAM mt48lc32m16a2p-75 MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c PDF

    M374S3253ATS

    Abstract: M374S3253CTU
    Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S3253CTU PC133/PC100 M374S3253ATS 32Mx72 32Mx8, M374S3253CTU 400mil 168-pin PDF

    M390S2858DTU

    Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
    Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked


    Original     		M390S2858DTU PC133/PC100 M390S2858DTU 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


    Original     		PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin PDF

    M366S1623DT0

    Abstract: M366S1623DT0-C75 K4S640832D-TC75
    Text: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.


    Original     		M366S1623DT0 PC133 PC100 M366S1623DT0 16Mx64 M366S1623DT0-C75 K4S640832D-TC75 PDF

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L PDF

    09005aef811ce1d5

    Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 09005aef811ce1d5 MT48LC2M32B2TG-7G PDF

    222k

    Abstract: 079R PC-100 PC100-222 KO9018
    Text: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.


    Original     		W9Q316727KD-222K 16Mx72 168-pin PC100-222 400-mil TSOPII-54 12-row, 8Mx72. W9Q316727KD-222K D9Q316727KD-222K 222k 079R PC-100 PC100-222 KO9018 PDF

    b1a12

    Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
    Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit


    Original     		M390S6450DTU PC133/PC100 M390S6450DTU 64Mx72 64Mx4, 64Mx4 400mil 18bits b1a12 M390S6450DTU-C7A M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design PDF

    MT48LC2M32B2

    Abstract: No abstract text available
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 025mm 09005aef811ce1d5 64MSDRAMx32 PDF

    M390S3253CTU

    Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
    Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous


    Original     		M390S3253CTU PC133/PC100 M390S3253CTU 32Mx72 32Mx8, 32Mx8 400mil 18-bits M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design PDF

    MT16LSDF3264

    Abstract: MT16LSDF6464 PC133 registered reference design
    Text: PRELIMINARY‡ 256, 512MB x64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT16LSDF3264(L)HG, MT16LSDF6464(L)HG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT 144-Pin Small-Outline DIMM • JEDEC-standard, PC100, PC133, 144-pin, smalloutline, dual in-line memory module (SODIMM)


    Original     		512MB MT16LSDF3264 MT16LSDF6464 144-Pin PC100, PC133, 144-pin, 256MB SD16C32 PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


    Original     		PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		168PIN PC100 TS4MLS64V8Z TS4MLS64V8Z PC-100 4Mx16 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits


    Original     		128MB 168PIN PC100 TS16MLS64V8C2 TS16MLS64V8C2 PC-100 8Mx16 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a


    Original     		128MB 168PIN PC100 TS16MLS64V8D2 TS16MLS64V8D2 PC-100. 16Mx8 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC100 Registered DIMM 512MB With 32M X 8 CL2 TS64MLR72V8F2 Placement Description The TS64MLR72V8F2 is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V8F2 consists of 18pcs of CMOS 32Mx8bits Synchronous DRAMs in TSOP-II


    Original     		168PIN PC100 512MB TS64MLR72V8F2 TS64MLR72V8F2 18pcs 32Mx8bits 400mil 168-pin PDF

    tsop44 footprint

    Abstract: SIEMENS PC100-222-620 TSOP44 Package layout PC100-222-620 TSOP44
    Text: S IE M E N S 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU- I/-10 HYS64/72V4220GU- I/-10 168 pin unbuffered DIMM Modules Advanced Inform ation • 168 Pin PC100 and PC66 com patible unbuffered 8 Byte Dual-ln-Line SDRAM Modules


    OCR Scan     		64/72-Bit HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 PC100 HYS64 V2200/4220GU-8/-10 tsop44 footprint SIEMENS PC100-222-620 TSOP44 Package layout PC100-222-620 TSOP44 PDF