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    128MSDRAM Search Results

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    A11 MARKING CODE

    Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


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    128Mb: PC100- PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 128MSDRAM PDF

    256MSDRAM

    Abstract: celestica
    Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory


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    64/72V8300/16220GU 64/72-Bit 168-Pin PC100 PC133 PC133 256MSDRAM celestica PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC66-, PC100- PC133-compliant 096-cycle 128MSDRAM 8M16 PDF

    128MSDRAM

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html


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    128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 60-pin, 11x13 128MSDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant


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    128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 60-pin, 11x13 PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-pin, 11x13 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 PDF

    L-23014-01

    Abstract: L24002 mitsubishi cdram
    Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh


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    L-21001-0B L-21002-0I x4/x8/x16 L-23014-01 L24002 mitsubishi cdram PDF

    64V32300GU-8-A

    Abstract: No abstract text available
    Text: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &


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    64/72V32300GU 64/72-Bit 168-pin PC100 PC133 Aprl99MODULE 256Mbit 64V32300GU-8-A PDF

    HYS72V1

    Abstract: No abstract text available
    Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions


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    64V8301GU 64-Bit 168-pin PC100 PC133 Aprl99MODULE HYS72V1 PDF

    256MDDRSDRAM

    Abstract: B22XX
    Text: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,


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    64/72V64220GU 64/72-Bit 168-pin PC100 PC133 256MDDRSDRAM B22XX PDF

    Untitled

    Abstract: No abstract text available
    Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory


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    64/72V16300/32220GU 64/72-Bit 168-Pin PC100 PC133 PC133 PDF

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


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    L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-BALL, 025mm. 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P PDF

    MT48LC16M8A2BB

    Abstract: PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View


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    128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 54-BALL, 09005aef8091e66d/Source: 09005aef8091e625 MT48LC16M8A2BB PC133 registered reference design PDF

    w9864g2gh-7

    Abstract: MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP-21368 ADSP21369 ADSP-21369
    Text: Engineer-to-Engineer Note a EE-286 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.


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    EE-286 ADSP-21368 ADSP-2137x ADSP-21367, ADSP-21368, ADSP-21369 ADSP-21368 W986432DH w9864g2gh-7 MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP21369 ADSP-21369 PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 11x13 60-pin, 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
    Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 096-cycle 096-cyc900 09005aef8091e66d/Source: 09005aef8091e625 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,


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    72Vx2xxGR PC100 168-pin TSOPII-54 Aprl99MODULE 256Mbit 512MByte PDF

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


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    L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi PDF

    smd transistor x8

    Abstract: 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram
    Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dram Features Figure 1: • PC100-, and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 192-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM smd transistor x8 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PDF

    8M16

    Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
    Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 096-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PDF

    W5453

    Abstract: mitsubishi year code L2202 mitsubishi clk 8MX16
    Text: MITSUBISHI ELECTRIC - L-æoa-o1 v 128M SDRAM Type Designation Code M2 V 28 S 4 0 TP-8 Access Item Package Type TP:TSOP ll Process Generation _ : 1st. gen. Function 0 : Random Column Organization 2n 2: x4, 3: x8, 4: x16


    OCR Scan
    L-22026-01 128MSDRAM PC66MHZ A10/AP 8Mx16 16Mx8 32Mx4 400mil 875mil A0-A11 W5453 mitsubishi year code L2202 mitsubishi clk 8MX16 PDF