A11 MARKING CODE
Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
60-ball,
11x13
A11 MARKING CODE
MARK 8E diode
MT48LC16M8A2FB-75
sdram 4 bank 4096 16
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
micron x8 pc100 sdram
PC133 registered reference design
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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Original
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128Mb:
PC100-
PC133-compliant
096-cycle
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
128MSDRAM
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PDF
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256MSDRAM
Abstract: celestica
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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Original
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
256MSDRAM
celestica
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
09005aef8091e66d/Source:
09005aef8091e625
128MSDRAM
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
TN-48-05
PC133 registered reference design
marking B44
MT48LC16M8A2BB
MT48LC16M8A2P
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC66-,
PC100-
PC133-compliant
096-cycle
128MSDRAM
8M16
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PDF
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128MSDRAM
Abstract: No abstract text available
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html
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Original
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128Mb:
PC100-,
PC133-compliant
096-cycle
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
60-pin,
11x13
128MSDRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant
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Original
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128Mb:
PC100-,
PC133-compliant
096-cycle
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
60-pin,
11x13
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
60-pin,
11x13
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
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PDF
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L-23014-01
Abstract: L24002 mitsubishi cdram
Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh
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Original
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L-21001-0B
L-21002-0I
x4/x8/x16
L-23014-01
L24002
mitsubishi cdram
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PDF
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64V32300GU-8-A
Abstract: No abstract text available
Text: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &
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Original
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64/72V32300GU
64/72-Bit
168-pin
PC100
PC133
Aprl99MODULE
256Mbit
64V32300GU-8-A
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PDF
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HYS72V1
Abstract: No abstract text available
Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions
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Original
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64V8301GU
64-Bit
168-pin
PC100
PC133
Aprl99MODULE
HYS72V1
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PDF
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256MDDRSDRAM
Abstract: B22XX
Text: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,
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Original
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64/72V64220GU
64/72-Bit
168-pin
PC100
PC133
256MDDRSDRAM
B22XX
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PDF
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Untitled
Abstract: No abstract text available
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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Original
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
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PDF
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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Original
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
60-BALL,
025mm.
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
TN-48-05
PC133 registered reference design
MT48LC16M8A2BB
MT48LC16M8A2P
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PDF
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MT48LC16M8A2BB
Abstract: PC133 registered reference design
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View
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Original
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128Mb:
PC100-,
PC133-compliant
096-cycle
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
54-BALL,
09005aef8091e66d/Source:
09005aef8091e625
MT48LC16M8A2BB
PC133 registered reference design
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PDF
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w9864g2gh-7
Abstract: MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP-21368 ADSP21369 ADSP-21369
Text: Engineer-to-Engineer Note a EE-286 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.
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Original
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EE-286
ADSP-21368
ADSP-2137x
ADSP-21367,
ADSP-21368,
ADSP-21369
ADSP-21368
W986432DH
w9864g2gh-7
MT48LC8M16A2
sdram controller
Memory bank size ADSP21369
128 bit processor schematic
ADSP-21367
ADSP21368
ADSP21369
ADSP-21369
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
11x13
60-pin,
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
096-cycle
096-cyc900
09005aef8091e66d/Source:
09005aef8091e625
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
TN-48-05
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PDF
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Untitled
Abstract: No abstract text available
Text: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,
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Original
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72Vx2xxGR
PC100
168-pin
TSOPII-54
Aprl99MODULE
256Mbit
512MByte
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PDF
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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Original
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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PDF
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smd transistor x8
Abstract: 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram
Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dram Features Figure 1: • PC100-, and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
192-cycle
09005aef8091e66d/Source:
09005aef8091e625
128MSDRAM
smd transistor x8
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
micron x8 pc100 sdram
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PDF
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
Text: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant
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Original
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
096-cycle
09005aef8091e66d/Source:
09005aef8091e625
128MSDRAM
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
TN-48-05
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PDF
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W5453
Abstract: mitsubishi year code L2202 mitsubishi clk 8MX16
Text: MITSUBISHI ELECTRIC - L-æoa-o1 v 128M SDRAM Type Designation Code M2 V 28 S 4 0 TP-8 Access Item Package Type TP:TSOP ll Process Generation _ : 1st. gen. Function 0 : Random Column Organization 2n 2: x4, 3: x8, 4: x16
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OCR Scan
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L-22026-01
128MSDRAM
PC66MHZ
A10/AP
8Mx16
16Mx8
32Mx4
400mil
875mil
A0-A11
W5453
mitsubishi year code
L2202
mitsubishi clk
8MX16
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PDF
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