64MDRAM Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
L-23014-01 Abstract: L24002 mitsubishi cdram Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh	Original	PDF	L-21001-0B L-21002-0I x4/x8/x16 L-23014-01 L24002 mitsubishi cdram
64M-DRAM Abstract: No abstract text available Text: INFORMATION NOTE Second Generation 64M - DRAM Characterisation Data 10.96 INFO64M4.DOC 64M-DRAM This information note is intended to provide technical information on the SIEMENS second generation 64M-DRAM Dynamic Access Memories operating at the 3.3 V VCC	Original	PDF	INFO64M4 64M-DRAM HYB3164 400/800/160AJ/AT 405/805/165AJ/AT 64M-DRAM
L24002 Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities	Original	PDF	L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
sandisk micro sd card pin Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM	Original	PDF	L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
3164165 Abstract: TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805 Text: HYB 3164 5 400/5 AJ/AT -40/-50/-60 64M x 4 - Bit Dynamic RAM HYB 3164(5)800/5 AJ/AT -40/-50/-60 8M x 8 - Bit Dynamic RAM HYB 3164(5,6)160/5 AT -40/-50/-60 4M x 16 -Bit Dynamic RAM INFORMATION NOTE 64M - Bit DYNAMIC MEMORIES (Second Generation) General Information	Original	PDF	Info64M3 64M-Bit HYB3164 400/800/160AJ/AT 405/805/165AJ/AT 400mil SOJ-24 3164165 TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805
4mx16 edo Abstract: M5M465165 ta 9812 Text: A L-21038-01 MITSUBISHI ELECTRIC 64MDRAM 3rd Generation Definition of Part-Number M5M4 XX XX X B X - X X T U 3rd Generation f Density / Refresh Word Organization Mode Package Speed Item Self Refresh 65 - 64M / 4K 64ms 67 - 64M / 8K ( 64ms) 40 - 16Mx4 80 - 8Mx8	OCR Scan	PDF	L-21038-01 64MDRAM 16Mx4 400mil 400milTSOPII L-21039-0B M5M467400BJ M5M467400BTP M5M467800BJ 4mx16 edo M5M465165 ta 9812
M5M465805ATP Abstract: 4mx16 edo M5M465400ATP Text: • A . MITSUBISHI ELECTRIC - L-21011-01 MITSUBISHI 2nd Generation 64MDRAM Series ~h Part Number Word Organization / Refresh / Function Package Speed Item Self Refresh Production M5M467400AJ	OCR Scan	PDF	L-21011-01 64MDRAM M5M467400AJ M5M467400ATP M5M467800AJ M5M467800ATP M5M465400AJ M5M465400ATP M5M465800AJ M5M465800ATP M5M465805ATP 4mx16 edo
Untitled Abstract: No abstract text available Text: L-21021-01 MITSUBISHI ELECTRIC \ 64MDRAM x4/x8 Package Outline (SOJ) +0.05 0.2 0,02 - r - 'S J cn ö o^+11OÑ 2.85±0.1 J A MITSUBISHI L-21022-01 ELECTRIC 64MDRAM (x4/x8) Package Outline (TSOP II) 11.76+0.2 • n n n n n n n n n n n n n n n n J dUUUUUUUUUUUUUUU	OCR Scan	PDF	L-21021-01 64MDRAM L-21022-01 L-21023-01
Untitled Abstract: No abstract text available Text: A MITSUBISHI L-21019-01 ELECTRIC 64MDRAM 16Mx4, 8Mx8 Pin Configuration 8M X 8 16M X 4 Vcc DQ1 DQ2 D03 D 04 NC Vcc /W /RAS AO Al A2 A3 A4 A5 Vcc Vcc DQ1 DQ2 NC NC NC NC AV /RAS AO Al A2 A3 A4 A5 Vcc W 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32Pin SOJ or TSOP2	OCR Scan	PDF	L-21019-01 64MDRAM 16Mx4, 32Pin L-21020-01 4MX16)
Untitled Abstract: No abstract text available Text: r MITSUBISHI ELECTRIC - Mitsubishi Technical Direction of DRAM High Performance, Low Power,Hig h Density,High Speed etc. High Density L-21001-01 MITSUBISHI ELECTRIC -	OCR Scan	PDF	L-21001-01 L-21007-0A 64MDRAM
Untitled Abstract: No abstract text available Text: HYB39S6440x/80x/16xT 64MBit Synchronous DRAM SIEM EN 64 MBit Synchronous DRAM Advanced Information • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command and Read with Single Controlled Write	OCR Scan	PDF	HYB39S6440x/80x/16xT 64MBit P-TSOPII-54
BT 804 Abstract: No abstract text available Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13	OCR Scan	PDF	32-Bit B166-H6993-X-7600, BT 804
BA0A11 Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9 Text: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8	OCR Scan	PDF	HYB39S6440X/8 X/16xT 64MBit P-TSOPII-54 400mil B39S6440X/80X/16xT PII-54 400mil, TSOPN-54 BA0A11 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9