TPU306 Search Results

PJ99

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. I NC T3 D • 0504336 SEM ICONDS/ IC S 00 0 3 h 0 M 93D 0 ■ ALGR 3> 03604 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VgsioH Limits V BR)GSS Device

e270 siliconix

Abstract: 2N3379 2N2844 InterFET MPF2609
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g. V BR GSS IDSS (V) (A) Min (S) Max 2.0m 2.2m 2.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 6.0m 6.0m 6.0m 6.0m 6.0m 6.0m 1.4m 1.5m 1.0m

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

2n3820

Contextual Info: P-CHANNEL JFETs T O -9 2 IT O -2 2 6 A A ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS oM v Device Type (BR)GSS Min. Limits *GSS Min. Max. <§»G Max. (V ) (V ) (mA) (nA) 2N3820 20 10 20 10 TP3993 25 1.0 1.0 15 TP3994 25 1.0 1.0 15 TP 4381 25 1.0 1.0 15 1.0

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type

2N5462 allegro

Abstract: 2N3820
Contextual Info: ALLEGRO MICROSYSTEMS INC LIE D • DSDM33Û 000b3^S Ibb ■ AL6R P-CHANNEL JFETs J TO -92/TO -226A A 3 ELECTRICAL CHARACTERISTICS at TA = 25°C ^GSfoff V Device Type ,GSS BR)GSS Min. @*G Max. @ VDS Min. Max. Conditions VDS c, ss ' dss Min. <PF) (V) (pF)

2n3820

Contextual Info: P-CH ANNEL JFETs T O -9 2 /T 0 -2 2 6AA V*3 ELECTRICAL CHARACTERISTICS at TA = 25°C V D evice Type V BR GSS M in. L im its *GSS -10 -10 -10 -15 -15 -102 -1? -12 -1.02 -1 0 -0.3 -10 •2.0 -3.0 -1 0 -15 -12 -5.0 -10 -10 •10 -15 -15 0.8 6.0 4.0 2.0 1.0 50

TP5114

Abstract: tp5115 PJ99 TP5021 J174 TPU304 TP3994 TP4381 TP5018 TP5019
Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 S P R A G U E . GROUP T3 D • 0513050 S E M I C O N D S / I C S 9 3 D GQD3bG4 0 3 6 0 4 1 ■ J> - 7 ^ 2 .7 - z .s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C