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Vishay Semiconductors 1N4150TR DIODE GEN PURP 50V 300MA DO35
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N4150TR	Cut Tape	56,686		1	1 $0.15 10 $0.105 100 $0.15 1000 $0.04776 10000 $0.03748	Buy Now
	1N4150TR	Reel	50,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03408	Buy Now
Vishay Semiconductors 1N4150W-E3-18 DIODE GEN PURP 50V 200MA SOD123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N4150W-E3-18	Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03267	Buy Now
New Advantage Corporation	1N4150W-E3-18		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.0313	Buy Now
Vishay Semiconductors 1N4150W-HE3-08 DIODE GEN PURP 50V 200MA SOD123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N4150W-HE3-08	Reel	24,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.04035	Buy Now
Vishay Semiconductors 1N4150W-E3-08 DIODE GEN PURP 50V 200MA SOD123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N4150W-E3-08	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.03873	Buy Now
Vishay Semiconductors 1N4150TAP DIODE GEN PURP 50V 150MA DO35
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N4150TAP	Cut Tape	18,675		1	1 $0.15 10 $0.104 100 $0.15 1000 $0.0472 10000 $0.03702	Buy Now

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1N4150 Datasheets (151)

Part	Manufacturer	Description	Datasheet Type	PDF
1N4150	Chenyi Electronics	SMALL SIGNAL SWITCHING DIODE	Original	PDF
1N4150	Compensated Devices	SWITCHING DIODES	Original	PDF
1N4150	DC Components	TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES	Original	PDF
1N4150	Diodes Incorporated	DIODE SWITCHING DIODE 50V 0.2A 2DO-35	Original	PDF
1N4150	Diodes Incorporated	FAST SWITCHING DIODE	Original	PDF
1N4150	Diodes Incorporated	Short Form Selection Guide	Original	PDF
1N4150	Diotec	Small Signal Si-Diodes	Original	PDF
1N4150	EIC Semiconductor	High Speed Switching Diodes	Original	PDF
1N4150	Fairchild Semiconductor	High Conductance Ultra Fast Diode	Original	PDF
1N4150	Galaxy Semi-Conductor Holdings	SMALL SIGNAL SWITCHING DIODE	Original	PDF
1N4150	General Semiconductor	SMALL SIGNAL DIODE	Original	PDF
1N4150	General Semiconductor	Small Signal Diodes	Original	PDF
1N4150	Good-Ark	SILICON EPITAXIAL PLANAR DIODES	Original	PDF
1N4150	HY Electronic	HIGH-SPEED SWITCHING DIODE	Original	PDF

1N4150	Lite-On Technology	FAST SWITCHING DIODE	Original	PDF
1N4150	Micro Commercial Components	DIODE ULTRA FAST RECOVERY RECTIFIER 50V 0.2A 2DO-35	Original	PDF
1N4150	Microsemi	Silicon Switching Diode	Original	PDF
1N4150	Microsemi	Silicon Switching Diode	Original	PDF
1N4150	Microsemi	Signal or Computer Diode	Original	PDF
1N4150	Philips Semiconductors	High-speed diodes	Original	PDF

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1N4150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C	Original	PDF	1N4150, 1N4150-1 1N3600 MIL-PRF-19500/231
Untitled Abstract: No abstract text available Text: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see	Original	PDF	1N4150 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 50K/box 1N4150 1N4150-TR 1N4150-TAP
Untitled Abstract: No abstract text available Text: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)	Original	PDF	1N4148 1N4150 1N4448 1N914B 1N4148/1N4150/1N4448/1N914B
Untitled Abstract: No abstract text available Text: 1N4150W Small-Signal Diode SOD-123 .022 0.55 Mounting Pad Layout Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches	Original	PDF	1N4150W OD-123 OD-123 D3/10K 30K/box 30K/box DO-35 1N4150, t4150. 200mA
DIODE WITH SOD CASE Abstract: DIODE MARK 35 max 083 1N4150 1N4150W LL4150 Text: 1N4150 Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diode min. 1.083 27.5 ♦ For general purpose and switching. max. ∅.079 (2.0) ♦ This diode is also available in other Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-35 case styles including: the SOD-123 case	Original	PDF	1N4150 DO-35 OD-123 1N4150W LL4150. DO-35 DIODE WITH SOD CASE DIODE MARK 35 max 083 1N4150 LL4150
fairchild 1n4150 Abstract: FAIRCHILD DIODE ultra fast diode 1N4150 Text: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.	Original	PDF	1N4150 FDLL4150 FDLL4150 LL-34 DO-35 MMBD1201-1205 DO-35-2 fairchild 1n4150 FAIRCHILD DIODE ultra fast diode
1N4150 Abstract: MM4150 Rectron Semiconductor glass mini melf diode Text: RECTRON SEMICONDUCTOR MM4150 TECHNICAL SPECIFICATION 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp.	Original	PDF	MM4150 1N4150 100uA 200mA MM4150 Rectron Semiconductor glass mini melf diode
1N4150 Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay Text: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	Original	PDF	1N4150 2002/95/EC 2002/96/EC TR/10 TAP/10 1N4150-TR 1N4150-TAP 08-Apr-05 1N4150 1N4150-TAP DO35 1n4150 vishay
general semiconductor DIODE SOD80 Abstract: melf diode color code Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC	Original	PDF	LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 08-Apr-05 general semiconductor DIODE SOD80 melf diode color code
00 marking SOD-123 Abstract: A4 marking diode Code sod-123 on semiconductor diode marking a4 marking a4 1N4150 1N4150W LL4150 A4 marking diode SOD 123 sod-123 DIODE marking code D3 Text: 1N4150W Small Signal Diode SOD-123 .022 0.55 Pad Layout SOD-123 Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches	Original	PDF	1N4150W OD-123 OD-123 D3/10K DO-35 1N4150, 00 marking SOD-123 A4 marking diode Code sod-123 on semiconductor diode marking a4 marking a4 1N4150 1N4150W LL4150 A4 marking diode SOD 123 sod-123 DIODE marking code D3
in3600 Abstract: IN4150 1N3600 MIL-PRF-19500/231 1N4150 1N4150-1 D0-35 Text: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION	Original	PDF	1N4150-1 MIL-PRF-19500/231 1N3600 1N4150 1N4150-1 1N3600 1N4150 IN4150, in3600 IN4150 MIL-PRF-19500/231 D0-35
Switching diode 50V 200mA Abstract: 1N4150 Text: 1N4150 SILICON EPITAXIAL PLANAR DIODE Features • Fast Switching Speed • High Reliability • High Conductance • For General Purpose Switching Applications Mechanical Data • Terminals: Solderable per MIL-STD-202, • Method 208 • Marking: Type Number	Original	PDF	1N4150 MIL-STD-202, 200mA 200mA, Switching diode 50V 200mA 1N4150
Untitled Abstract: No abstract text available Text: 1N4150 Small Signal Switching Diodes VOLTAGE RANGE: 50 V CURRENT: 150 m A DO - 35 Features ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Mechanical Data ◇ Case: DO-35,glass case ◇ Polarity: Color band denotes cathode	Original	PDF	1N4150 DO-35 100mA 200mA 10to100mA)
Untitled Abstract: No abstract text available Text: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C	Original	PDF	1N4150UR, 1N4150UR-1 1N3600UR MIL-PRF-19500/231

1n3600 Abstract: 1N4150 1n3600 chip Text: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for	OCR Scan	PDF	200rnA 1N3600; 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 Cur70 1n3600 1n3600 chip
1N4148.1N4448 Abstract: BYV37-BYV38 byg20 Text: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983	OCR Scan	PDF	1N4148 1N4448 1N4150 1N4151 1N4154 1N4728A. 1N4761A 1N5221B. 1N5267B 1N5417 1N4148.1N4448 BYV37-BYV38 byg20
Untitled Abstract: No abstract text available Text: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings	OCR Scan	PDF	1N4150_ 01-Apr-99
Untitled Abstract: No abstract text available Text: VfSMAY _ LS4150 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Q uadra M elf package Applications High speed sw itch and general purpose use in co m	OCR Scan	PDF	LS4150 1N4150 D-74025 01-Apr-99
1N3600 Abstract: 1N4150 1N4150-1 JTXV1N3600 Text: COMPUTER DIODE JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 200mA Low Power, Switching FEATURES DESCRIPTION • • • • • This series of switching diodes is useful in many computer sw itching applications, for both m ilitary and comm ercial systems.	OCR Scan	PDF	200mA 1N3600 1N4150 1N4150-1 MIL-S-19500/231 DO-35 1N4150-1 JTXV1N3600
DSAIH0002550 Abstract: No abstract text available Text: Square ended SMD Fvv Silicon switching diodes 1N6638US 1N6642US 1N6643US Applications High Rel. Voidless MELF "D" General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4148UR-1 and 1N4150UR-1.	OCR Scan	PDF	1N6638US 1N6642US 1N6643US 1N4148UR-1 1N4150UR-1. L-S-19500 DSAIH0002550
Untitled Abstract: No abstract text available Text: wmmt ▼ LS4150 _ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Quadra Melt package Applications High speed switch and general purpose use in com puter and industrial applications	OCR Scan	PDF	LS4150 1N4150 01-Apr-99
in4151 Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134 Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.	OCR Scan	PDF	bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134
Diode 1N4150 Abstract: BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600 Text: • DOOfiTbD 2bl ■ R H M ROHVn 1N4150/1N3600 DIODE ROHM STANDARD ABSOLUTE MAXIMUM RATINGS: Ta=25’C Peak Reverse Voltage Reverse Voltage DC Peak Forward Current Forward Current DC Peak Forward Surge Current Total Power Dissipation Junction Temperature	OCR Scan	PDF	1N4150/1N3600 Tas25 RL-100Ã Diode 1N4150 BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600
1N4150 Abstract: No abstract text available Text: tfiBS 1N4150 FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability I Mechanical Data_ • • • • • DO-35 Case: DO-35, Plastic Leads: Solderable per M IL-STD-202,	OCR Scan	PDF	1N4150 DO-35, MIL-STD-202, DO-35 1N4150 200mA, DS12018

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1N4150 Price and Stock

Vishay Semiconductors 1N4150TR

Vishay Semiconductors 1N4150W-E3-18

Vishay Semiconductors 1N4150W-HE3-08

Vishay Semiconductors 1N4150W-E3-08

Vishay Semiconductors 1N4150TAP

1N4150 Datasheets (151)

1N4150 Datasheets Context Search

Untitled

Untitled

Untitled

Untitled

DIODE WITH SOD CASE

fairchild 1n4150

1N4150

1N4150

general semiconductor DIODE SOD80

00 marking SOD-123

in3600

Switching diode 50V 200mA

Untitled

Untitled

1n3600

1N4148.1N4448

Untitled

Untitled

1N3600

DSAIH0002550

Untitled

in4151

Diode 1N4150

1N4150