TPU305 Search Results

PJ99

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. I NC T3 D • 0504336 SEM ICONDS/ IC S 00 0 3 h 0 M 93D 0 ■ ALGR 3> 03604 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VgsioH Limits V BR)GSS Device

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

e175 Siliconix

Abstract: E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g.a Min (S) Max VGS(off) Max (V) IGSS Max (A) C'sa Max (F) PD Max (W) Derate at (WrC) Toper Max (DC) Package Style P-Channel JFETs, (Co nt' d) 5 10 - 15 20 2N3386 5MPJ271 TMPFJ271 E175

tpu3050

Abstract: micronas frc DSA003669
Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6 6 7 8 8 8 9

Contextual Info: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type

Contextual Info: TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATASHEET Contents 1 1 Page Section Title 4 1. Introduction 4 1.1. Features 6 2. Functional Description 6 2.1. Conceptional Overview 6 2.2. Teletext Acquisition 6 2.3. Teletext Page Management 7 2.4. Display Page Generation

2N5462 allegro

Abstract: 2N3820
Contextual Info: ALLEGRO MICROSYSTEMS INC LIE D • DSDM33Û 000b3^S Ibb ■ AL6R P-CHANNEL JFETs J TO -92/TO -226A A 3 ELECTRICAL CHARACTERISTICS at TA = 25°C ^GSfoff V Device Type ,GSS BR)GSS Min. @*G Max. @ VDS Min. Max. Conditions VDS c, ss ' dss Min. <PF) (V) (pF)

tpu3050

Abstract: teletext font
Contextual Info: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6

2n3820

Contextual Info: P-CH ANNEL JFETs T O -9 2 /T 0 -2 2 6AA V*3 ELECTRICAL CHARACTERISTICS at TA = 25°C V D evice Type V BR GSS M in. L im its *GSS -10 -10 -10 -15 -15 -102 -1? -12 -1.02 -1 0 -0.3 -10 •2.0 -3.0 -1 0 -15 -12 -5.0 -10 -10 •10 -15 -15 0.8 6.0 4.0 2.0 1.0 50

TCA700Y

Abstract: TCA700Y equivalent TCA700 pioneer PAL 007 A SAK215 PAL 007 pioneer SMD Hall sensors 4 pin for cd rom TCA700y data sheet VDP3108A pioneer PAL 007 B
Contextual Info: MICRONAS S U M M A R Y 1999 Integrated Circuits and Sensors November 1998 6200-250-1E All information and data contained in this catalog are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any

TP5114

Abstract: tp5115 PJ99 TP5021 J174 TPU304 TP3994 TP4381 TP5018 TP5019
Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 S P R A G U E . GROUP T3 D • 0513050 S E M I C O N D S / I C S 9 3 D GQD3bG4 0 3 6 0 4 1 ■ J> - 7 ^ 2 .7 - z .s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C