TP3993 Search Results

2n3820

Contextual Info: P-CHANNEL JFETs T O -9 2 IT O -2 2 6 A A ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS oM v Device Type (BR)GSS Min. Limits *GSS Min. Max. <§»G Max. (V ) (V ) (mA) (nA) 2N3820 20 10 20 10 TP3993 25 1.0 1.0 15 TP3994 25 1.0 1.0 15 TP 4381 25 1.0 1.0 15 1.0

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

2N3820

Abstract: TP2609 MPF111 TP3331 MPF110 MPF112 MPF820 NJ32 TPBC264A TPBC264B
Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SPRAGUE. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 93D 03603 T J> T ï'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS Limits

Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS

2SJ72BL

Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m

2N5462 allegro

Abstract: 2N3820
Contextual Info: ALLEGRO MICROSYSTEMS INC LIE D • DSDM33Û 000b3^S Ibb ■ AL6R P-CHANNEL JFETs J TO -92/TO -226A A 3 ELECTRICAL CHARACTERISTICS at TA = 25°C ^GSfoff V Device Type ,GSS BR)GSS Min. @*G Max. @ VDS Min. Max. Conditions VDS c, ss ' dss Min. <PF) (V) (pF)

2n3820

Contextual Info: P-CH ANNEL JFETs T O -9 2 /T 0 -2 2 6AA V*3 ELECTRICAL CHARACTERISTICS at TA = 25°C V D evice Type V BR GSS M in. L im its *GSS -10 -10 -10 -15 -15 -102 -1? -12 -1.02 -1 0 -0.3 -10 •2.0 -3.0 -1 0 -15 -12 -5.0 -10 -10 •10 -15 -15 0.8 6.0 4.0 2.0 1.0 50