STD-32
Abstract: STD32 TELIC VDE0711 antenna specialists 134 Power PCB Relays Sim card PIN CLIP-4 SIM 900 file attachment email AT COMMANDS imei
Text: Manual Page 1-34 Telic STD 32 Telic GmbH – Internet: www.telic.de; E-mail: info@telic.de Version 03/09 1
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GSM project
Abstract: interfacing gps gsm Opto-Sensor gps mobile tracking system GPS gprs GSM alarm system GSM communication projects GSM project circuit TELIC car alarm sensor
Text: Features: Telic Picotrack - the miniaturized, ultra-small, and compact live GSM / GPRS / GPS Tracking & Tracing Device GSM / GPRS /GPS integrated Ultra Small Size – only 30 grams Quad Band Stand-alone Unit incl. GSM / GPS Antenna and Rechargeable LiPolymer Battery
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STD32
STD35
RS232
GSM project
interfacing gps gsm
Opto-Sensor
gps mobile tracking system
GPS gprs
GSM alarm system
GSM communication projects
GSM project circuit
TELIC
car alarm sensor
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303F
Abstract: PDIP28 U637256 ZMD AG
Text: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in
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U637256
U637256
D-01109
D-01101
303F
PDIP28
ZMD AG
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM6246/D SEMICONDUCTOR TECHNICAL DATA MCM6246 512K x 8 Bit Static Random Access Memory Freescale Semiconductor, Inc. The MCM6246 is a 4,194,304 bit static random access memory organized as 524,288 words of 8 bits. Static design eliminates the need for external clocks or
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MCM6246/D
MCM6246
MCM6246
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM32515/D SEMICONDUCTOR TECHNICAL DATA Advance Information Freescale Semiconductor, Inc. 512K x 32 Bit Fast Static RAM Module The MCM32515 is a 16M bit static random access memory module organized
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MCM32515/D
MCM32515
MCM6246
MCM32515
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Plastic 32-pin 300 mil SOIC
Abstract: STK14C88-345 303F STK14C88-3
Text: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down
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STK14C88-3
200ns
100-Year
32-Pin
STK14C88-3
Plastic 32-pin 300 mil SOIC
STK14C88-345
303F
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STK14C88
Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems
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STK16C88
200ns
100-Year
STK16C88
28-pin
STK14C88
STK15C88
STK16C88-25
STK16C88-35
STK16C88-45
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PDIP28
Abstract: U631H16 ZMD AG
Text: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
D-01109
D-01101
PDIP28
U631H16
ZMD AG
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STK11C68-SF45I
Abstract: STK11C68-SF45 stk11c68sf45
Text: STK11C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up ■ Unlimited RECALL cycles
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STK11C68
64-Kbit
STK11C68
STK11C68-SF45I
STK11C68-SF45
stk11c68sf45
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STK22C48-NF
Abstract: stk22c48-nf45i
Text: STK22C48 16 Features Functional Description • 25 ns and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power-down
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STK22C48
16-Kbit
STK22C48
STK22C48-NF
stk22c48-nf45i
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PLCC32
Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
Text: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In
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U630H16PA35
to125
M3015
PLCC32
U630H16
U630H16
PLCC32
U630H16PA35
GR47
all stk ic diagram
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sop28
Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
Text: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK22C48
STK22C48
ML0004
sop28
STK22C48-NF25
STK22C48-NF45
tps 1806
239 SOIC
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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303F
Abstract: No abstract text available
Text: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description High-performance CMOS nonvolatile static RAM 32768 x 8 bits 35 and 45 ns Access Times 15 and 20 ns Output Enable Access Times ICC = 8 mA typ. at 200 ns Cycle
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UL634H256
303F
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MATRA MHS HM* 28 pins SO pack
Abstract: No abstract text available
Text: HM 65799 MATRA MHS 64 K x 4 with OE High Speed CMOS SRAM Introduction The HM 65799 is a high speed CMOS static RAM organized as 65,536 × 4 bit. It is manufactured using MHS high performance CMOS technology. Access times as fast 20 ns are available with maximum
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710b
Abstract: 6264C MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing
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MCM6264C/D
MCM6264C
MCM6264C
MCM6264C/D*
710b
6264C
MCM6264CJ12
MCM6264CP12
MCM6264CP15
MCM6264CP20
MCM6264CP25
MCM6264CP35
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65756
Abstract: MHS 65756 L65756
Text: L 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM 3.3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a
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Untitled
Abstract: No abstract text available
Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby
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EDI88128CS
128Kx8
EDI88128LPS)
MIL-PRF-38535.
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ITT 435-1
Abstract: No abstract text available
Text: S iW H S electronic June 1992 HM 65798 HI-REL DATA SHEET_ 64 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS • FAST ACCESS TIME : 25*/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE: 660 mW STANDBY : 190 mW . WIDE TEMPERATURE RANGE : - 55°C TO + 125°C
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DS3235
Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Text: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and PNC11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)
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ds3600-1
P10C68/P11C68
PNC10C68
PNC11C68)
DS3159-1
DS3160-1
DS3234-1
DS3235-1
P10C68
P11C68
DS3235
DS3600
PNC11
PNC11C68
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Matra-Harris Semiconductor
Abstract: MATRA MHS HMT "18-Pin LCC" MATRA-HARRIS HM3-65756 matra harris
Text: I 75 foO^f HM «5747 /1ATRA-HARRIS SEMICONDUCTOR 4K x 1 HIGH SPEED CM#S SRAM Q JA N U A R Y 1987 Features • • • • • • • • • Pinout HIG H S P E E D , F A S T A C C E S S T IM E : 2 5 /3 5 /4 5 ns A S Y N C H R O N O U S IN P U T S S T A N D B Y C U R R E N T : 1 0 m A m ax
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99tool/
D-8057
03/France
Matra-Harris Semiconductor
MATRA MHS HMT
"18-Pin LCC"
MATRA-HARRIS
HM3-65756 matra harris
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Untitled
Abstract: No abstract text available
Text: himMMS March 1994 HM 65788 DATA SHEET_ 16 K x 4 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME COMMERCIAL: 15/20/25/35/45 ns INDUSTRIAL/MILITARY : 20/25/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE : 267 mW typ STANDBY: 75 mW(typ)
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J24pins
6S788/Rev
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Untitled
Abstract: No abstract text available
Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
a256Kx16,
512Kx8
1024Kx4
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Untitled
Abstract: No abstract text available
Text: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera
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U635H256
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