STD35 Search Results

STD35NF06L

Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

gps modem

Abstract: relay 5 pin 12v 6a 12V RELAY 6A Antenna Specialists circuit simple alarm remote control gsm modem sim 900 imei modem mobile phone GSM 900/1800 PCB GSM ANTENNA SMS module datasheet
Contextual Info: STD35 Telemetry module User Manual Table of contents Subjects Important Information Advice Safety instructions Operation conditions Proper use Introduction Connectors and LEDs Startup General aspects Configuration call Usage Tracking via GPS Modem functionality

d35nf06l

Abstract: STD35NF06L STD35NF06LT4 isd 1700 isd 1700 application D35NF
Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014 Ω - 35A DPAK STripFET II POWER MOSFET TYPE STD35NF06L • ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL

D35NF06

Abstract: JESD97 STD35NF06 STD35NF06T4 D35NF
Contextual Info: STD35NF06 N-channel 60V - 0.018Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF06 60V <0.020Ω 35A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description

STD35NF06

Contextual Info: STD35NF06 N-CHANNEL 60V - 0.018Ω - 35A DPAK STripFET II MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD35NF06 60 V < 0.024 Ω 35 A TYPICAL RDS(on) = 0.018 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 1 DPAK DESCRIPTION

D35NF3LL

Abstract: JESD97 STD35NF3LL STD35NF3LLT4
Contextual Info: STD35NF3LL N-channel 30V - 0.014Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF3LL 30V <0.0195Ω 35A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive

STD35N3LH5

Contextual Info: STD35N3LH5 N-channel 30 V, 14 mΩ, 35 A, DPAK STripFET V Power MOSFET Preliminary data Features • Type VDSS RDS on max ID STD35N3LH5 30 V < 16 mΩ 35 A 100% avalanche tested 3 ■ Surface mounting DPAK (TO-252) ■ RDS(on) * Qg industry benchmark ■

STD35NF3LL

Abstract: STD35NF3LL-1
Contextual Info: STD35NF3LL STD35NF3LL-1 N-CHANNEL 30V - 0.014 Ω - 35A IPAK/DPAK STripFET II POWER MOSFET TYPE STD35NF3LL STD35NF3LL-1 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 30 V 30 V < 0.0195 Ω < 0.0195 Ω 35 A 35 A TYPICAL RDS(on) = 0.016 Ω @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

Contextual Info: STD35N3LH5 N-channel 30 V, 12.5 mΩ, 35 A, DPAK STripFET V Power MOSFET Features • Order code VDSS RDS on max ID STD35N3LH5 30 V < 16 mΩ 35 A 100% avalanche tested 3 ■ Surface mounting DPAK (TO-252) ■ Low gate drive power losses 1 DPAK Applications

D35NF06L

Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■

STD35NF06L

Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

Contextual Info: STD35NF06 N-channel 60V - 0.018Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF06 60V <0.020Ω 35A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description

D35NF06L

Abstract: JESD97 STD35NF06L STD35NF06LT4
Contextual Info: STD35NF06L N-channel 60V - 0.014Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF06L 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized 3 1 Description DPAK This Power MOSFET is the latest development of

STD35NF06

Contextual Info: STD35NF06 N-CHANNEL 60V - 0.018Ω - 35A DPAK STripFET II MOSFET • ■ ■ ■ TYPE V DSS R DS on ID STD35NF06 60 V < 0.024 Ω 35 A TYPICAL RDS(on) = 0.018 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 1 DPAK DESCRIPTION

STD35NF06

Contextual Info: STD35NF06 N-CHANNEL 60V - 0.018Ω - 35A DPAK STripFET II MOSFET • ■ ■ ■ ■ TYPE V DSS R DS on ID STD35NF06 60 V < 0.024 Ω 35 A TYPICAL RDS(on) = 0.018 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

7662

Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■

TO-251 footprint

Abstract: STD35NF3LL STD35NF3LL-1
Contextual Info: STD35NF3LL STD35NF3LL-1 N-CHANNEL 30V - 0.014 Ω - 35A IPAK/DPAK STripFET II POWER MOSFET TYPE STD35NF3LL STD35NF3LL-1 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.0195 Ω < 0.0195 Ω 35 A 35 A TYPICAL RDS(on) = 0.016 Ω @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

D35NF06

Abstract: dpak DIODE D35NF
Contextual Info: STD35NF06 N-channel 60V - 0.018Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF06 60V <0.020Ω 35A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description

Contextual Info: STD35NF3LL N-channel 30V - 0.014Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF3LL 30V <0.0195Ω 35A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ■ ) s (

STD35NF06L

Abstract: d35nf06l
Contextual Info: STD35NF06L N-channel 60V - 0.014Ω - 35A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF06L 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized 3 1 Description DPAK This Power MOSFET is the latest development of

1T4 tube

Contextual Info: STD35NF3LL STD35NF3LL-1 N-channel 30V - 0.014Ω - 35A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD35NF3LL-1 30V <0.0195Ω 35A STD35NF3LL 30V <0.0195Ω 35A 3 • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced

engine control unit

Abstract: HCF4094 smd HCF4060 common rail diesel pump hcf4051 SMD VBG15NB37 VND610 VNS1NV04D transil smd 15v CAR IGNITION WITH IGBTS
Contextual Info: AUTOMOTIVE Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Multimedia Climatization Dashboard r Info Entertainment Car Radio Powe pers Beam Discharg e Lamp Power Window s Power Seats Sun Roof Seat Heating

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

DRAMs

Contextual Info: Synchronous DRAM Application Note l. Introduction The purpose of this application note is to introduce Synchronous DRAMs SDRAMs to designers who are not familiar with these devices. The application note assumes familiarity with basic standard DRAM design techniques, and will point out similarities