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    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC538200AP/AF-8 M BIT 512K W O R D X 16 B IT / 1 M W ORD X 8 B IT C M O S M A S K R O M D E S C R IP T IO N T h e T C 5 3 8 2 0 0 A P /A F is a 8 ,3 8 8 ,6 0 8 b its re a d on ly m em ory o rg an ize d a s 5 2 4 ,2 8 8 w ords b y 16 b its


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    PDF TC538200AP/AF--------------8 TC538200AP/AF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits


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    PDF TC538200AP/AF TC538200AP/AF 608-bit 42-pin 44-pin DIP42â TC538200AP/AFâ

    A10AL

    Abstract: TC538200AFT
    Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.


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    PDF TC538200AP/AF/AFT TC538200AP/AF 608-bit 42-pin 44-pin OP44-- A10AL TC538200AFT

    TC538200AP

    Abstract: TC538200AF TC538200 TC538200A
    Text: TOSHIBA TC538200AP/AF SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS MASK ROM D escription The TC538200AP/AF or as 1,048,576 w ords by The TC538200AP/AF The TC538200AP/AF is a 8,388,608 bit read only m em ory organized as 524,288 w ords by 16 bits when BYTE is logical high,


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    PDF TC538200AP/AF TC538200AP/AF 600mil 42-pin 44-pin TC538200AP TC538200AF TC538200AF TC538200 TC538200A

    TC538200AP

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K W O RD BY 16 BITS/1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits


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    PDF TC538200AP/AF TC538200AP/AF 608-bit 42-pin 44-pin DIP42--P TC538200AP/AF--6 TC538200AP

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


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    PDF TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310