Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC538200AP/AF-8 M BIT 512K W O R D X 16 B IT / 1 M W ORD X 8 B IT C M O S M A S K R O M D E S C R IP T IO N T h e T C 5 3 8 2 0 0 A P /A F is a 8 ,3 8 8 ,6 0 8 b its re a d on ly m em ory o rg an ize d a s 5 2 4 ,2 8 8 w ords b y 16 b its
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TC538200AP/AF--------------8
TC538200AP/AF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits
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TC538200AP/AF
TC538200AP/AF
608-bit
42-pin
44-pin
DIP42â
TC538200AP/AFâ
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A10AL
Abstract: TC538200AFT
Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.
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TC538200AP/AF/AFT
TC538200AP/AF
608-bit
42-pin
44-pin
OP44--
A10AL
TC538200AFT
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TC538200AP
Abstract: TC538200AF TC538200 TC538200A
Text: TOSHIBA TC538200AP/AF SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS MASK ROM D escription The TC538200AP/AF or as 1,048,576 w ords by The TC538200AP/AF The TC538200AP/AF is a 8,388,608 bit read only m em ory organized as 524,288 w ords by 16 bits when BYTE is logical high,
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TC538200AP/AF
TC538200AP/AF
600mil
42-pin
44-pin
TC538200AP
TC538200AF
TC538200AF
TC538200
TC538200A
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TC538200AP
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K W O RD BY 16 BITS/1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits
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TC538200AP/AF
TC538200AP/AF
608-bit
42-pin
44-pin
DIP42--P
TC538200AP/AF--6
TC538200AP
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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