TC 144 Search Results

common rail bosch

Abstract: 2F 1 marking MC68HC05X4 rev counter AM3 Processor Functional Data Sheet Bosch Common Rail microprocessor bosch 00FF HC05 M68HC05
Contextual Info: Dr af tC MC68HC05X4/D Rev 1.0 tC Dr af tC MC68HC05X4 Dr af HCMOS Microcontroller Unit TECHNICAL DATA tC af Dr tC af Dr Dr af tC af tC List of Sections List of Sections Dr List of Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Contextual Info: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)

Contextual Info: Calibration Technology Starts Here Precision Thermocouple Calibrator Accuracy by Any Measure MARTEL Beta TC-100 The TC-100 The TC-100 Thermocouple Calibrator provides high accuracy source and measurement of ten common thermocouples, as well as mV. The TC-100’s accuracy of

24N10

Contextual Info: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C

QB-144GJ-TC-01S

Contextual Info: Drawings of QB-144GJ-TC-01S Prepared on Apr. 8, 2005 Unit: mm < Top view > < Bottom view > Foot pattern of QB-144GJ-TC-01S Unit: mm

AN6610

Abstract: 2-DIGIT 7-SEGMENT LED DISPLAY cathode TC14433EPG 14433 TC14433B
Contextual Info: WTELEDYNE COMPONENTS TC 14433 TC 14433A TC 14433B 3-1/2 DIGIT ADC FEATURES GENERAL DESCRIPTION • Accuracy: ±0.05% o f Reading ±1 Count ■ Two Voltage Ranges: 1.999V and 199.9 mV ■ Up to 25 Conversions Per Second ■ ZIN > 1000M Ohms ■ Single Positive Voltage Reference

Contextual Info: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter

marking tA2

Contextual Info: D TA 144V U A / D TA 144V K A / D TA 144VS A Transistors D TC 144V U A / D TC 144V K A / D TC 144V S A I Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA •F eatures 1 ) Built-in bias resistors enable the configuration of an inverter

Contextual Info: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc

TC-DEL

Abstract: t5 electronic ballast 1x26W electronic ballast for T5 lamp electronic ballast t5 tridonicatco
Contextual Info: TC-SEL, TC-DEL, TC-TEL, TC-DD, T5 Electronic ballasts Linear and compact lamps PC Basic 4–18 W 220–240 V 50/60/0 Hz, non dimmable 40 21 70 80 4,3 40 70 • defined lamp warm start < 2 s • switching cycles > 25.000 • average life = 50.000 h at ta max. and a failure rate

l 1101-44

Abstract: MARKING b27 7480 C102K LB502K a502k lc502
Contextual Info: TC-D, TC-DD, TC-L, TC-S Magnetic chokes Compact lamps EC 5–18 W 240 V 50 Hz Figure 1: • tw = 130 °C • push terminal 0.5–1.5 mm2 Figure 1 Figure 2 Figure 2: • tw = 130 °C • ConCut – IDC terminal 0.5–1.5 mm2 • optimised for automated wiring in luminaires

UL2493

Abstract: UL2919 UL2464 6251-10 70005701 78414
Contextual Info: 524-2012:QuarkCatalogTempNew 8/23/12 10:51 AM Page 524 TEST & MEASUREMENT 3 Multipair Computer Cables Low Capacitance Cables for EIA RS-232 and EIA RS-422 Applications RoHS Stranded Tinned Copper TC conductors, polypropylene insulated, twisted pairs. Overall 100% Beldfoil + 90% TC braid shield. 28 AWG stranded TC drain wire.

Contextual Info: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms

12n60c

Abstract: 12N60CD1
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA

d5565

Contextual Info: QIXYS ADVANCEDTECHNICAL INFORMATION HiPerFET Power MOSFET IXFK 44N60 DSS I Single MOSFET Die trr <250 ns Symbol Test Conditions V V™ Tj = 25°C to 150°C T, = 25°C to 150°C 600 600 V V Vos Continuous Transient ¿20 ±30 V V Tc =25°C Tc = 25° C Tc =25°C

Contextual Info: DIXYS IGBT with Diode IXSH 15N120AU1 IC25 V Short Circuit SOA Capability Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 MO 1200 V v v GEM Continuous Transient U25 U90 ' cm Tc =25°C Tc = 90°C Tc = 25°C, 1 ms

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms

IXGH32N60BU1

Abstract: 32N60BU1 G32N60B 32N60B IXGH32N60
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms

tt 2146 m

Contextual Info: DIXYS IXSH 25N120A IGBT IC25 V CES r Short Circuit SOA Capability Symbol Test C onditions V CES Tj Tj v CQR V 0 ES vQEM CE sat Maximum Ratings = 25°C to 150°C = 25°C to 150°C; RGE= 1 MO Continuous Transient ' cm Tc = 25°C Tc =90°C Tc = 25°C, 1 ms SSOA

IXGH50N60B

Contextual Info: HiPerFASTTM IGBT IXGH 50N60B IXGK 50N60B IXGT 50N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C ICM TC = 25°C, 1 ms

28N60B

Abstract: em 404
Contextual Info: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms

Contextual Info: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms

Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms

110N2

Contextual Info: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20