28N60B Search Results

28n60

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

28N60B

Abstract: em 404
Contextual Info: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms

Contextual Info: Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

Contextual Info: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i

Contextual Info: nixYS Advanced Technical Information Low VCE sat IGBT with Diode IXGH 28N60BD1 VCES IXGT 28N60BD1 IC25 V CE(sat) = 600 V = 40 A = 2£ , U0 V V Combi Pack Maximum Ratings Symbol Test Conditions v T j = 25° C to 1 50° C 600 V V CGR T , = 25° C to 150° C; RGE„ = 1 MQ

Contextual Info: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

025B2

Abstract: ge motor 752
Contextual Info: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM