24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
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transistor da 307
Abstract: 24N10
Text: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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24N100
24N100
transistor da 307
24N10
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000
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24N100
24N100
247TM
O-264
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFN 24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 1000 V = 24 A = 0.39 W trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000
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24N100
OT-227
E153432
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PDF
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Untitled
Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C
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24N100
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z 607 ma
Abstract: No abstract text available
Text: IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000
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24N100
24N100
247TM
O-264
z 607 ma
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
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24N100
Abstract: 24N10
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C
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24N100
ISOPLUS247TM
24N10
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24N10
Abstract: No abstract text available
Text: AdvancedTechnical Information 24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C
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IXFK24N100
24N100
to150
24N10
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24N100
Abstract: "SOT-227 B" dimensions 125OC
Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
"SOT-227 B" dimensions
125OC
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24N100
Abstract: 23N100
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
227TM
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet Ω RDSon = 390 mΩ in High Voltage ISOPLUS i4-PACTM 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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24N100
24N100
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24n100f
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS on = 0.39 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
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24N100F
247TM
728B1
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Untitled
Abstract: No abstract text available
Text: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFR 24N100 V¥ ISOPLUS247™ ^D25 = 1000 V 22 A = _ 0.39 ß DS on “ “ dss P (Electrically Isolated Back Surface) trr <250 ns Single MOSFET Die Symbol Test Conditions v Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2
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24N100
ISOPLUS247TM
Cto150
00A/tis,
247TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
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24N100F
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFN 24N100F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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24N100F
OT-227
E153432
728B1
24N100F
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Untitled
Abstract: No abstract text available
Text: □ I X Y Advanced Technical Information S IXFK 24N100 IXFX 24N100 HiPerFET Power MOSFETs V,DSS Single MOSFET Die ttS Maximum Ratings Test Conditions V DSS v DGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 Mß VGS V GSM Continuous Transient ^D25
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24N100
PLUS247â
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ID25 = 22 A ISOPLUS247TM Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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24N100
ISOPLUS247TM
247TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 1000 V ID25 = 22 A RDS on = 0.39 Ω ≤ 250 ns trr IXFR 24N100 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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ISOPLUS247TM
24N100
247TM
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Untitled
Abstract: No abstract text available
Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G
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24N100
247TM
IXFK24N100/IXFX24N100
405B2
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ixfk24n100
Abstract: No abstract text available
Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM
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24N100
247TM
IXFK24N100/IXFX24N100
405B2
ixfk24n100
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PDF
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24N100
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM ID25 = 22 A Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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24N100
ISOPLUS247TM
247TM
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1522s
Abstract: D 819 mss1000
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR 24N100 V,DSS = 1000 V = 22 A ISOPLUS247™ ^D25 Electrically Isolated Back Surface ^ D S (o n )= 0.39 Q trr < 250 ns Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C
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24N100
ISOPLUS247â
T0-247AD
1522s
D 819
mss1000
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