110N2 Search Results

110N2 Result Highlights (5)

Part	Manufacturer	Description
HM2P08PZ5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 row vertical Header, Module Type B with 125 signal pinsand RoHS compatable
HM2P80PK5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type CR with 55 Signal Pins
HM2P60PD5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 row vertical Header, Module Type C (no Location Pegs) with 55 signal pinsand RoHS compatable
HM2P95PDG110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 Row vertical Press-Fit Header, Type DE with 172 Signal Pins and RoHS compatible
HM2P82PD8110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 row vertical Header, Module Type FR (Reversed Type F) with 88 signal pins and RoHS compatabile

110N2 Price and Stock

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Infineon Technologies AG IPB110N20N3LFATMA1 MOSFET N-CH 200V 88A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB110N20N3LFATMA1	Digi-Reel	4,000		1	1 $9.18 10 $6.298 100 $9.18 1000 $4.27876 10000 $4.27876	Buy Now
	IPB110N20N3LFATMA1	Cut Tape	4,000		1	1 $9.18 10 $6.298 100 $9.18 1000 $4.27876 10000 $4.27876	Buy Now
	IPB110N20N3LFATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $4.27875 10000 $4.27875	Buy Now
Avnet Americas	IPB110N20N3LFATMA1	Reel	3,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPB110N20N3LFATMA1		1,921			1 $8.49 10 $5.95 100 $4.48 1000 $4.27 10000 $4.27	Buy Now
Newark	IPB110N20N3LFATMA1	Cut Tape	2,655		1	1 $9.08 10 $6.72 100 $6.72 1000 $6.72 10000 $6.72	Buy Now
	IPB110N20N3LFATMA1	Reel			1,000	1 - 10 - 100 - 1000 $5.29 10000 $5.29	Buy Now
Chip1Stop	IPB110N20N3LFATMA1	Cut Tape	736			1 $7.29 10 $5.2 100 $4.11 1000 $3.76 10000 $3.76	Buy Now

EBV Elektronik	IPB110N20N3LFATMA1			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	IPB110N20N3LFATMA1		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP110N20N3GXKSA1 MOSFET N-CH 200V 88A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP110N20N3GXKSA1	Tube	3,172		1	1 $8.35 10 $8.35 100 $8.35 1000 $3.77824 10000 $3.77824	Buy Now
Avnet Americas	IPP110N20N3GXKSA1	Bulk		16 Weeks, 4 Days	1	1 $6.48 10 $5.78 100 $4.72 1000 $4.72 10000 $4.72	Buy Now
Mouser Electronics	IPP110N20N3GXKSA1		2,594			1 $5.95 10 $5.77 100 $3.99 1000 $3.77 10000 $3.77	Buy Now
Newark	IPP110N20N3GXKSA1	Bulk	4,172		1	1 $6.48 10 $5.78 100 $4.72 1000 $4.35 10000 $4.35	Buy Now
TME	IPP110N20N3GXKSA1		22		1	1 $7.26 10 $6.2 100 $5.2 1000 $4.44 10000 $4.44	Buy Now

Chip1Stop	IPP110N20N3GXKSA1	Tube	1,020			1 $4.04 10 $4.03 100 $3.98 1000 $3.98 10000 $3.98	Buy Now
EBV Elektronik	IPP110N20N3GXKSA1		1,000	17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPP110N20N3GXKSA1		1,000		1	1 - 10 - 100 - 1000 $4.51 10000 $4.51	Buy Now
Win Source Electronics	IPP110N20N3GXKSA1		37,300			1 - 10 - 100 $3.766 1000 $3.766 10000 $3.766	Buy Now
Infineon Technologies AG IPP110N20NAAKSA1 MOSFET N-CH 200V 88A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP110N20NAAKSA1	Tube	1,040		1	1 $7.91 10 $7.91 100 $4.5338 1000 $4.5338 10000 $4.5338	Buy Now
Avnet Americas	IPP110N20NAAKSA1	Bulk		17 Weeks, 5 Days	1	1 $6.38 10 $5.74 100 $5.08 1000 $5.08 10000 $5.08	Buy Now
	IPP110N20NAAKSA1	Tube		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IPP110N20NAAKSA1	Bulk	203		1	1 $2.98 10 $2.98 100 $2.98 1000 $2.98 10000 $2.98	Buy Now
Bristol Electronics	IPP110N20NAAKSA1		191			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPP110N20NAAKSA1		1		1	1 $5.04 10 $5.04 100 $4.74 1000 $4.28 10000 $4.28	Buy Now

TME	IPP110N20NAAKSA1				1	1 $10.22 10 $7.39 100 $6.95 1000 $6.95 10000 $6.95	Get Quote
Chip1Stop	IPP110N20NAAKSA1	Tube	846			1 $5.14 10 $5.06 100 $3.27 1000 $3.27 10000 $3.27	Buy Now
EBV Elektronik	IPP110N20NAAKSA1			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTH110N25T MOSFET N-CH 250V 110A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH110N25T	Tube	521		1	1 $10.82 10 $10.82 100 $6.44133 1000 $5.09949 10000 $5.09949	Buy Now
Newark	IXTH110N25T	Bulk	300		1	1 $9.19 10 $9.19 100 $5.77 1000 $5.26 10000 $5.26	Buy Now
Littelfuse Inc IXTN110N20L2 MOSFET N-CH 200V 100A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN110N20L2	Tube	308		1	1 $35.49 10 $35.49 100 $34.80333 1000 $34.80333 10000 $34.80333	Buy Now
Newark	IXTN110N20L2	Bulk	300		1	1 $30.94 10 $30.94 100 $30.94 1000 $30.94 10000 $30.94	Buy Now

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110N2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
t110n2 Abstract: 110N2 t-110n2 339 D-PAK NTD110N02RT4 Text: NTD110N02R Power MOSFET 110 A, 24 V, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R NTD110N02RG NTD110N02R-001 NTD110N02R-001G NTD110N02RT4 NTD110N02RT4G BRD8011/D. t110n2 110N2 t-110n2 339 D-PAK
107n20n Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3
t110n2 Abstract: 369AA-01 110N2 Text: NTD110N02R Power MOSFET 110 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D t110n2 369AA-01 110N2
107n20n Abstract: No abstract text available Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n
110n2g Abstract: STD110N02R Text: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R, STD110N02R NTD110N02R/D 110n2g STD110N02R
110n2g Abstract: T110N2G t110n2 T110n t-110n2 110N2 Text: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D 110n2g T110N2G t110n2 T110n t-110n2 110N2
107N20NA Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n Text: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 107N20NA PG-TO220-3 110N20NA 107N20NA 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
110n2g Abstract: t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G Text: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D 110n2g t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G
110n2g Abstract: T110N2G t110n2 110N2 T110n t-110n2 369D NTD110N02R NTD110N02RG NTD110N02RT4 Text: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D 110n2g T110N2G t110n2 110N2 T110n t-110n2 369D NTD110N02R NTD110N02RG NTD110N02RT4
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
110N20N Abstract: 107n20n D88 z IPB107N20N3G Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on)	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 107N20N PG-TO220-3 110N20N 107n20n D88 z IPB107N20N3G
110N2 Abstract: 369D T110N2 NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G 25C80 dpak DIODE Text: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D 110N2 369D T110N2 NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G 25C80 dpak DIODE
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

t110n2 Abstract: 110N2 NTD110N02R 369D NTD110N02RG NTD110N02RT4 NTD110N02RT4G Text: NTD110N02R Power MOSFET 110 A, 24 V, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D t110n2 110N2 NTD110N02R 369D NTD110N02RG NTD110N02RT4 NTD110N02RT4G
110n2g Abstract: STD110N02RT4G STD110N02R 110N2 T110N2G Text: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R, STD110N02R NTD110N02R/D 110n2g STD110N02RT4G 110N2 T110N2G
369D Abstract: NTD110N02R NTD110N02R-1 NTD110N02RT4 110N2 110N02 Text: NTD110N02R Power MOSFET 110 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R NTD110N02R/D 369D NTD110N02R NTD110N02R-1 NTD110N02RT4 110N2 110N02
IXFK110N20 Abstract: 20n20 IXFN120N20 IXFK120N20 Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C	OCR Scan	PDF	IXFN120N20 IXFN110N20 IXFK120N20 IXFK110N20 O-264 20N20 20n20
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
110N20 Abstract: pf 480 d25 Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)	OCR Scan	PDF	200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25
110N20 Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429 Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol	OCR Scan	PDF	120N20 200ns 110N20 IXFK110N20 Mosfet P 110A, diode lt 429
110N2 Abstract: No abstract text available Text: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20	OCR Scan	PDF	O-264 to150 OT-227 110N2
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	PDF	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	PDF	67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

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110N2 Search Results

110N2 Result Highlights (5)

110N2 Price and Stock

Infineon Technologies AG IPB110N20N3LFATMA1

Infineon Technologies AG IPP110N20N3GXKSA1

Infineon Technologies AG IPP110N20NAAKSA1

Littelfuse Inc IXTH110N25T

Littelfuse Inc IXTN110N20L2

110N2 Datasheets Context Search

t110n2

107n20n

t110n2

107n20n

110n2g

110n2g

107N20NA

110n2g

110n2g

sd 20n60

7n60b

110N20N

110N2

7N60B equivalent

t110n2

110n2g

369D

IXFK110N20

ixys ixfn 55n50

110N20

110N20

110N2

52N30

C1218