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    110N20 Search Results

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    110N20 Price and Stock

    Infineon Technologies AG IPB110N20N3LFATMA1

    MOSFET N-CH 200V 88A TO263-3
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    DigiKey IPB110N20N3LFATMA1 Reel 3,000 1,000
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    Avnet Americas IPB110N20N3LFATMA1 Reel 22,000 16 Weeks 1,000
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    Mouser Electronics IPB110N20N3LFATMA1 2,177
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    Newark IPB110N20N3LFATMA1 Cut Tape 2,539 1
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    IPB110N20N3LFATMA1 Reel 1,000
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    Chip One Stop IPB110N20N3LFATMA1 Cut Tape 736 0 Weeks, 1 Days 1
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    EBV Elektronik IPB110N20N3LFATMA1 17 Weeks 1,000
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    Flip Electronics IPB110N20N3LFATMA1 1,000
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    Vyrian IPB110N20N3LFATMA1 3,274
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    Infineon Technologies AG IPP110N20NAAKSA1

    MOSFET N-CH 200V 88A TO220-3
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    DigiKey IPP110N20NAAKSA1 Tube 489 1
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    Avnet Americas IPP110N20NAAKSA1 Bulk 1
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    IPP110N20NAAKSA1 Tube 500
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    Newark IPP110N20NAAKSA1 Bulk 196 1
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    Bristol Electronics IPP110N20NAAKSA1 191
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    Rochester Electronics IPP110N20NAAKSA1 1,387 1
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    TME IPP110N20NAAKSA1 1
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    Chip One Stop IPP110N20NAAKSA1 Tube 826 0 Weeks, 1 Days 1
    • 1 $6.63
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    EBV Elektronik IPP110N20NAAKSA1 17 Weeks 500
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    Vyrian IPP110N20NAAKSA1 465
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    Littelfuse Inc IXTN110N20L2

    MOSFET N-CH 200V 100A SOT227B
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    DigiKey IXTN110N20L2 Tube 294 1
    • 1 $39.22
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    Newark IXTN110N20L2 Bulk 200 1
    • 1 $37.13
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    Infineon Technologies AG IPI110N20N3GAKSA1

    MOSFET N-CH 200V 88A TO262-3
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    DigiKey IPI110N20N3GAKSA1 Tube
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    Rochester Electronics IPI110N20N3GAKSA1 10,500 1
    • 1 $4.54
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    EBV Elektronik IPI110N20N3GAKSA1 143 Weeks 500
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    Vyrian IPI110N20N3GAKSA1 362
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    Infineon Technologies AG IPP110N20N3GXKSA1

    Power MOSFET, N Channel, 200 V, 88 A, 11 Milliohms, TO-220, 3 Pins, Through Hole - Bulk (Alt: 47W3478)
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    Avnet Americas IPP110N20N3GXKSA1 Bulk 16 Weeks, 4 Days 1
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    Mouser Electronics IPP110N20N3GXKSA1 1,444
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    Newark IPP110N20N3GXKSA1 Bulk 3,962 1
    • 1 $5.03
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    TME IPP110N20N3GXKSA1 12 1
    • 1 $7.06
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    Chip One Stop IPP110N20N3GXKSA1 Tube 1,020 0 Weeks, 1 Days 1
    • 1 $4.21
    • 10 $4.2
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    EBV Elektronik IPP110N20N3GXKSA1 17 Weeks 500
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    Vyrian IPP110N20N3GXKSA1 1,575
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    Win Source Electronics IPP110N20N3GXKSA1 37,300
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    Find more 110N20 price and stock on Findchips.com

    110N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFK110N20

    Abstract: 20n20 IXFN120N20 IXFK120N20
    Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C


    OCR Scan     		IXFN120N20 IXFN110N20 IXFK120N20 IXFK110N20 O-264 20N20 20n20 PDF

    107n20n

    Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3 PDF

    107n20n

    Abstract: No abstract text available
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF

    107N20NA

    Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
    Text: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 107N20NA PG-TO220-3 110N20NA 107N20NA 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n PDF

    110N20

    Abstract: pf 480 d25
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)


    OCR Scan     		200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    110N20N

    Abstract: 107n20n D88 z IPB107N20N3G
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on)


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 107N20N PG-TO220-3 110N20N 107n20n D88 z IPB107N20N3G PDF

    110N20

    Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol


    OCR Scan     		120N20 200ns 110N20 IXFK110N20 Mosfet P 110A, diode lt 429 PDF

    110N20N

    Abstract: No abstract text available
    Text: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)


    Original     		IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 110N20N PDF

    110N2

    Abstract: No abstract text available
    Text: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20


    OCR Scan     		O-264 to150 OT-227 110N2 PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A • 175 °C operating temperature


    Original     		IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 PG-TO220-3 107N20NA 110N20NA PDF