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    TA 8225 Search Results

    TA 8225 Result Highlights (5)

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    LPZ4018-225MRC Coilcraft Inc General Purpose Inductor, 2200uH, 20%, Ferrite-Core, 1616, Visit Coilcraft Inc
    LPZ4018-225 Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    LPZ4018-225MRB Coilcraft Inc General Purpose Inductor, 2200uH, 20%, Ferrite-Core, 1616, Visit Coilcraft Inc
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    TA 8225 Price and Stock

    Cornell Dubilier Electronics Inc 225TTA250M

    Aluminum Electrolytic Capacitors - Axial Leaded 2.2uF 250V 20%
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    Cornell Dubilier Electronics Inc 225TTA050M

    Aluminum Electrolytic Capacitors - Axial Leaded 2.2uF 50V 20% LYTICS/IC
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    Mouser Electronics 225TTA050M 3,079
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    Cornell Dubilier Electronics Inc 225TTA450M

    Aluminum Electrolytic Capacitors - Axial Leaded 2.2uF 450V 20% LYTICS/IC
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    Mouser Electronics 225TTA450M 2,045
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    Cornell Dubilier Electronics Inc 225TTA350M

    Aluminum Electrolytic Capacitors - Axial Leaded 2.2uF 350V 20% LYTICS/IC
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    Mouser Electronics 225TTA350M 1,853
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    Cornell Dubilier Electronics Inc 225TTA100M

    Aluminum Electrolytic Capacitors - Axial Leaded 2.2uF 100V 20%
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    Mouser Electronics 225TTA100M 1,066
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    TA 8225 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TA8225 Unknown Scan PDF
    TA8225H Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TA8225H Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA8225H Toshiba 45W BTL Audio Amplifier Scan PDF
    TA8225H Toshiba 45 W BTL Audio Amplifier Scan PDF
    TA8225H Toshiba Audio amplifier, Single channel, HZIP, 17-Pin Scan PDF
    TA8225H Toshiba Single-Channel Audio Power-Output Amplifier Scan PDF
    TA8225HQ Toshiba 45W BTL Audio Amplifier Original PDF
    TA8225L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TA8225L Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA8225L Toshiba 45 W BTL Audio Amplifier Scan PDF
    TA8225L Toshiba Single-Channel Audio Power-Output Amplifier Scan PDF
    TA8225L Toshiba Audio amplifier, Single channel, HSIP, 17-Pin Scan PDF
    TA8225LQ Toshiba 45W BTL Audio Amplifier Original PDF

    TA 8225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0200 Rev.2.00 Feb 05, 2013 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)


    Original     		PDF RJK2576DPA R07DS0860EJ0200 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)


    Original     		PDF RJK2576DPA R07DS0860EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)


    Original     		PDF RJK2076DPA R07DS0859EJ0200 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0100 Rev.1.00 Jul 27, 2012 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)


    Original     		PDF RJK1575DPA R07DS0858EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)


    Original     		PDF RJK2076DPA R07DS0859EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0200 Rev.2.00 Jan 08, 2013 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)


    Original     		PDF RJK1575DPA R07DS0858EJ0200 PWSN0008DE-A

    OD128

    Abstract: HA 13431 chen yi tda 2850
    Text: M CRF20 2 Pa ssive RFID Device w ith Sensor Inpu t FEATU RES • Sens or inpu tpola rity inverts da ta s trea m • Rea d only da ta tra ns m is s ion • 96- or 128-bits offa ctory prog ra m m ing u s er m em ory a ls o s u pports 48 a nd 64-bitprotocols


    Original     		PDF CRF20 128-bi 64-bi DS2130 OD128 HA 13431 chen yi tda 2850

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A

    rjh60f5

    Abstract: rjh60f5dpk RJH60F5D RJH60F RJH60 R07DS0055EJ0200 PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60F5DPK R07DS0055EJ0200 Previous: REJ03G1836-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)


    Original     		PDF RJH60F5DPK R07DS0055EJ0200 REJ03G1836-0100) PRSS0004ZE-A Collec9044 rjh60f5 rjh60f5dpk RJH60F5D RJH60F RJH60 R07DS0055EJ0200 PRSS0004ZE-A SC-65

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0200 PRSS0003ZA-A therma2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Datasheet RJP65S04DWT / RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0200 Rev.2.00 Oct 09, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • High speed Switching


    Original     		PDF RJP65S04DWT RJP65S04DWA R07DS0821EJ0200 RJP65S04DWT-80 RJP65S04DWA-80

    RJP60V0DPM

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A RJP60V0DPM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM-80 R07DS1036EJ0100 PRSS0003ZD-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA 1250V - 100A - IGBT Application: Inverter R07DS0829EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		PDF RJP1CS06DWT/RJP1CS06DWA R07DS0829EJ0100 RJP1CS06DWT-80 RJP1CS06DWA-80 R07DS0829EJ0100 1250sas

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP65S04DWT/RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed Switching


    Original     		PDF RJP65S04DWT/RJP65S04DWA R07DS0821EJ0002 RJP65S04DWT-80 RJP65S04DWA-80

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application: Inverter R07DS0824EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed Switching


    Original     		PDF RJP65S07DWT/RJP65S07DWA R07DS0824EJ0002 RJP65S07DWT-80 RJP65S07DWA-80

    PIC16C505

    Abstract: No abstract text available
    Text: PIC16C505 PIC16C505 Rev. A Silicon Errata Sheet The PIC16C505 Rev. A parts you have received conform functionally to the Device Data Sheet (DS40192C), except for the anomalies described below. FIGURE 1: PIC16LC505 VOLTAGE-FREQUENCY GRAPH, -40°C ≤ TA ≤ 0°C


    Original     		PDF PIC16C505 PIC16C505 DS40192C) PIC16LC505 DS80060B-page

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter R07DS0827EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		PDF RJP1CS04DWT/RJP1CS04DWA R07DS0827EJ0100 RJP1CS04DWT-80 RJP1CS04DWA-80 R07DS0827EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS07DWT/RJP1CS07DWA 1250V - 150A - IGBT Application: Inverter R07DS0830EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		PDF RJP1CS07DWT/RJP1CS07DWA R07DS0830EJ0100 RJP1CS07DWT-80 RJP1CS07DWA-80 R07DS0830EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM-80 R07DS1036EJ0200 PRSS0003ZD-A th2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching


    Original     		PDF RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter R07DS0826EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		PDF RJP1CS03DWT/RJP1CS03DWA R07DS0826EJ0002 RJP1CS03DWT-80 RJP1CS03DWA-80