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    RJK2576DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0200 Rev.2.00 Feb 05, 2013 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)


    Original     		PDF RJK2576DPA R07DS0860EJ0200 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)


    Original     		PDF RJK2576DPA R07DS0860EJ0100 PWSN0008DE-A

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1