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    Text: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)


    Original     		PDF RJK2576DPA R07DS0860EJ0100 PWSN0008DE-A