Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJH60F Search Results

    SF Impression Pixel

    RJH60F Price and Stock

    Renesas Electronics Corporation RJH60F6DPQ-A0-T0

    IGBT TRENCH 600V 85A TO-247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F6DPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F3DPQ-A0-T0

    IGBT TRENCH 600V 40A TO-247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F3DPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F7DPQ-A0-T0

    IGBT TRENCH 600V 90A TO-247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F7DPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F5DPQ-A0-T0

    IGBT TRENCH 600V 80A TO-247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F5DPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F5DPK-00-T0

    IGBT TRENCH 600V 80A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F5DPK-00-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more RJH60F price and stock on Findchips.com

    RJH60F Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60F0DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 201.6W TO-3P Original PDF
    RJH60F0DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 201.6W TO-247A Original PDF
    RJH60F3DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P Original PDF
    RJH60F3DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-247A Original PDF
    RJH60F4DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-3P Original PDF
    RJH60F4DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO247A Original PDF
    RJH60F5BDPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 260.4W TO-247A Original PDF
    RJH60F5DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 260.4W TO-3P Original PDF
    RJH60F5DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 260.4W TO247A Original PDF
    RJH60F6BDPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO-247A Original PDF
    RJH60F6DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO-3P Original PDF
    RJH60F6DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO247A Original PDF
    RJH60F7ADPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO-3P Original PDF
    RJH60F7BDPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO-247A Original PDF
    RJH60F7DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO247A Original PDF

    RJH60F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH60F3DPK-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A current9044 RJH60F3DPK-00 PDF

    rjh60f5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPK R07DS0055EJ0300 PRSS0004ZE-A curren9044 rjh60f5 PDF

    rjh60f5

    Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
    Text: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P


    Original     		RJH60F5DPK REJ03G1836-0100 PRSS0004ZE-A rjh60f5 RJH60F5DPK RJH60F PDF

    RJH60F3

    Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00 PDF

    rjh60f5

    Abstract: RJH60F5DPQ-A0 RJH60F5D rjh60f5dpq RJH60F rjh60f5dpqa0 PRSS0003ZH-A RJH60 r07ds0326ej
    Text: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0200 PRSS0003ZH-A O-247A) rjh60f5 RJH60F5DPQ-A0 RJH60F5D rjh60f5dpq RJH60F rjh60f5dpqa0 PRSS0003ZH-A RJH60 r07ds0326ej PDF

    RJH60F7

    Abstract: RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A
    Text: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features 1B • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A) RJH60F7 RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A PDF

    RJH60F7

    Abstract: RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A C9044 RJH60F7 RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) PDF

    RJH60F7

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0328EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0100 PRSS0003ZH-A O-247A) RJH60F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A to9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A curren9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPQ-A0 R07DS0324EJ0200 PRSS0003ZH-A O-247A) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F6DPQ-A0 R07DS0327EJ0200 PRSS0003ZH-A O-247A) PDF

    RJH60F4

    Abstract: RJH60F4DPK RJH60F PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1835-0200 Rev.2.00 Jun 17, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPK REJ03G1835-0200 PRSS0004ZE-A RJH60F4 RJH60F4DPK RJH60F PRSS0004ZE-A SC-65 PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4 PDF

    RJH60F5

    Abstract: RJH60F5DPK
    Text: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPK R07DS0055EJ0300 PRSS0004ZE-A RJH60F5 RJH60F5DPK PDF

    rjh60f6

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) rjh60f6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) PDF

    Rjh60f5

    Abstract: RJH60F5DPQ r07ds0326ej
    Text: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0200 PRSS0003ZH-A O-247A) Rjh60f5 RJH60F5DPQ r07ds0326ej PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F3DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0391EJ0100 Rev.1.00 May 11, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F3DPQ-A0 R07DS0391EJ0100 PRSS0003ZH-A O-247A) PDF

    RJH60F5

    Abstract: RJH60F5DPQ-A0
    Text: Preliminary Datasheet RJH60F5DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0326EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F5DPQ-A0 R07DS0326EJ0100 PRSS0003ZH-A O-247A) RJH60F5 RJH60F5DPQ-A0 PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0325EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0100 PRSS0003ZH-A O-247A) RJH60F4 PDF