R07DS0325EJ0200 Search Results

R07DS0325EJ0200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package	Original	RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A)	PDF
RJH60F4 Abstract: PRSS0003ZH-A RJH60F Contextual Info: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package	Original	RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) RJH60F4 PRSS0003ZH-A RJH60F	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

Original

RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A)

PDF

RJH60F4

Abstract: PRSS0003ZH-A RJH60F
Contextual Info: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

Original

RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) RJH60F4 PRSS0003ZH-A RJH60F

PDF