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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) PDF

    RJH60F4

    Abstract: PRSS0003ZH-A RJH60F
    Text: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) RJH60F4 PRSS0003ZH-A RJH60F PDF