RJH60F3 Search Results
RJH60F3 Price and Stock
Renesas Electronics Corporation RJH60F3DPQ-A0-T0IGBT TRENCH 600V 40A TO-247A |
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RJH60F3DPQ-A0-T0 | Tube |
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Renesas Electronics Corporation RJH60F3DPK-00-T0IGBT TRENCH 600V 40A TO-3P |
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RJH60F3DPK-00-T0 | Tube |
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RJH60F3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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RJH60F3DPK-00#T0 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P | Original | |||
RJH60F3DPQ-A0#T0 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-247A | Original |
RJH60F3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RJH60F3DPK-00Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
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RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A current9044 RJH60F3DPK-00 | |
RJH60F3
Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
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RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00 | |
Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0391EJ0100 Rev.1.00 May 11, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package |
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RJH60F3DPQ-A0 R07DS0391EJ0100 PRSS0003ZH-A O-247A) | |
RJH60F3Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 600 V - 20 A - IGBT High Speed Power Switching R07DS0391EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
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RJH60F3DPQ-A0 R07DS0391EJ0200 PRSS0003ZH-A O-247A) RJH60F3 | |
Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
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RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A | |
RJH60F3
Abstract: RJH60F PRSS0003ZH-A
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RJH60F3DPQ-A0 R07DS0391EJ0200 PRSS0003ZH-A O-247A) RJH60F3 RJH60F PRSS0003ZH-A | |
RJH60F7
Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
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RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 | |
RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
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0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 |