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    Renesas Electronics Corporation RJH60F3DPQ-A0-T0

    IGBT TRENCH 600V 40A TO-247A
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    Renesas Electronics Corporation RJH60F3DPK-00-T0

    IGBT TRENCH 600V 40A TO-3P
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    RJH60F3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60F3DPK-00#T0
    Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P Original PDF
    RJH60F3DPQ-A0#T0
    Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-247A Original PDF

    RJH60F3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH60F3DPK-00

    Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original
    RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A current9044 RJH60F3DPK-00 PDF

    RJH60F3

    Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
    Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original
    RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00 PDF

    Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0391EJ0100 Rev.1.00 May 11, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original
    RJH60F3DPQ-A0 R07DS0391EJ0100 PRSS0003ZH-A O-247A) PDF

    RJH60F3

    Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 600 V - 20 A - IGBT High Speed Power Switching R07DS0391EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original
    RJH60F3DPQ-A0 R07DS0391EJ0200 PRSS0003ZH-A O-247A) RJH60F3 PDF

    Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original
    RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A PDF

    RJH60F3

    Abstract: RJH60F PRSS0003ZH-A
    Contextual Info: Preliminary Datasheet RJH60F3DPQ-A0 600 V - 20 A - IGBT High Speed Power Switching R07DS0391EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original
    RJH60F3DPQ-A0 R07DS0391EJ0200 PRSS0003ZH-A O-247A) RJH60F3 RJH60F PRSS0003ZH-A PDF

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original
    RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original
    0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF