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Contextual Info: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0200 Rev.2.00 Jan 08, 2013 Features • Very low on-resistance RDS on = 0.038 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C) |
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RJK1575DPA R07DS0858EJ0200 PWSN0008DE-A |