T2T TRANSISTOR Search Results

T2T TRANSISTOR

Abstract: BFR591
Contextual Info: Philips Semiconductors bbS3^31 DD31T1E T2T • APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHILIPS/DISCRETE FEA TU R ES b'lE D ■ PINNING • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2

TIP32 TI

Contextual Info: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.

fmmta92

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 •JANUARY 1996 FMMTA92 FMMTA93 O_ P A R T M A R K IN G DETAILS: FMM TA92 - 4E FMM TA93 -2 E F M M T A 9 2 R - 8E F M M T A 9 3 R - 6E C O M P L E M E N T A R Y TY PE S: - FM M TA92 - FM M TA42

T2T TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

2SC4713K

Abstract: 2SC4774 T106 T146 T147
Contextual Info: h 7 > i / 7, £ /Transistors 2SC 4713K 2S C 4774 2SC4713K/2SC4774 Epitaxial Planar NPN Silicon Transistor raJS /R F Amplifier • ^M ^i& E I/D in ien sio n s Unit : mm 1) Ron 2) • Features 1) Very low output on-state resist­ ance. 2) Low capacitance.

K 3053 TRANSISTOR

Abstract: k 246 transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

transistor marking t2T

Abstract: T2T TRANSISTOR ST4403
Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification. DESCRIPTION

NDB7052L

Abstract: NDP7052L
Contextual Info: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using

Contextual Info: SGS-THOMSON * 71. nn g^@l[LggirMnigi_SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 - MAY 94_ FEATURES * 120 V olt VCE0 * 1 A m p continuous current * Gain o f 3K a t lc=1 Am p * Ptot=1 W att APPLICATIONS * Lamp, solenoid and relay drivers

5 DIGIT dvm

Contextual Info: F G EC PLESSEY 37bflSS2 15 SEMI CONDS DDOÔMÛD 1 A PLESSEY W S em iconductors 'T - S lH 'Q O 'g ’ ZNA216 LOW POWER 3% DIGIT DVM INTEGRATED CIRCUIT T h e Z N A 21 6 D VM IC is a versatile D V M system com ponent which contains all the control logic necessary to

T0-126 pin configuration

Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V

Contextual Info: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

NDS8934

Abstract: Scans-000
Contextual Info: Nat t onai Semiconductor " J u n e 19 96 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

Contextual Info: TLP862JLP866 TLP867 INFRARED + PHOTO DARLINGTON TRANSISTOR TLP862 VCR, COMPACT DISC PLAYER COPYING MACHINE, FACSIMILE, PRINTER VENDING MACHINE, TICKETING MACHINE FOR VARIOUS POSITION DETECTION The TLP862, TLP866 and TLP867 are photo interrupters with an infrared LED and a high sensitivity

BUH313

Contextual Info: SGS-THOMSON IMDigæilLieîœiiMei BUH313 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SG S-T H O M SO N P R E F E R R E D S A LE S T Y P E . HIGH V O LT A G E CAPABILITY • U.L. R E C O G N ISE D ISOWATT218 P A C K A G E U.L. FILE# E817 3 4 (N . APPLICATIONS:

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

Tektronix 7603

Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Contextual Info: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO

2C3303

Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
Contextual Info: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

Contextual Info: GEC PLESSEY ADVANCE INFORMATION DS3638 • 2.0 Z N 4 1 4 Z & Z N 4 1 6 E AM RADIO RECEIVERS The ZN414Z is a 10 transistor tuned radio frequency TRF circuit packaged in a 3-pin TO-92 plastic package for simplicity and space economy. The circuit provides a complete R.F. amplifier, detector and