711DFLSB Search Results

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

m3303

Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
Contextual Info: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

74ABT2952

Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
Contextual Info: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors

SCN26562

Abstract: SCN26562C4A52 SCN26562C4N48
Contextual Info: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)

sot173x

Abstract: BFP505
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency

80C51

Abstract: 83CE654 RFI noise reduction
Contextual Info: 711DflSb DDbbflE? IbS • P H I N Philips Semiconductors Microcontroller Products Preliminary specification CMOS single-chip 8-bit m icrocontroli^ ^T h"” Electromagnetic Compatibility improvements DESCRIPTION PIN CONFIGURATION The 83CE654 Single-Chip 8-Bit

plji

Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
Contextual Info: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control

BSV81

Contextual Info: 711DflSb OübT^bb 7fl0 IPHIN BSV81 N-CHANNEL IG-MOS-FET S ym m etrica l d e p le tio n ty p e fie ld -e ffe c t tra n sisto r in a T O -72 metal envelope w ith the substrate connec­ ted to th e case. It is intended fo r ch o p pe r and o th er special sw itch in g a p p lications, e.g. tim in g circuits,

100MHz high-frequency generator

Abstract: NE5205N High-Frequency Wideband Power Transformers NE5205D operational amplifier discrete schematic SIgnetics RF Communications Products Signetics SE 540 zo 103 ma NE5205FE SA5205D
Contextual Info: PHILIPS INTERNATIONAL SflE D • 711DflSb □OM'lb'lS 817 « P H I N Signetics RF Communications Product specification Wide-band high-frequency amplifier NE/SA5205 No external components are needed other than AC coupling capacitors because the NE/SA/SE5205 is internally compensated

71009 SB

Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
Contextual Info: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an

PZ2327B15U

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

T0-126 pin configuration

Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V

SOT173

Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFP505 SbE D • 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain PIN • Low noise figure 1 DESCRIPTION O’ collector • High transition frequency

STT 3 SIEMENS

Abstract: VS056 84C00 diagram universal remote op62 universal remote PCA84C922 PCA84C923 S028 SDIP24
Contextual Info: INTEGRATED CIRCUITS \ m m m PCA84C922; PCA84C923 Microcontrollers for universal infrared remote transmitter applications Product specification File under Integrated Circuits, IC14 Philips S e m ico n d u cto rs 711DflSb 0CH0â25 mo This Material Copyrighted By Its Respective Manufacturer

Contextual Info: PHILIPS INTERNATIONAL SbE D • 711DflSb DDMbSTti DTO ■ P H I N Philips Components RZ3135B42W Data sheet status date ofIssue Preliminary specification June 1992 NPN silicon planar epitaxial microwave power transistor D E S C R IP T IO N A P P L IC A T IO N

CTC 880 transistor

Abstract: ctc 880 transistor pins philips PE 1938 power supply marking B5T SCN2681AC1N40 SCN2681AC1N28 SCN2681 3 pin CTC 880 transistor SCN2681AC1F28 SCN2681AC1F40
Contextual Info: PHILIPS INTERNATIONAL SbE » 711DflSb 0037cH b 713 • PHIN Product specification Philip« Semlconductors-Slgnetlcs Data Communications Products SCN2681 Dual asynchronous receiver/transmitter DUART T - 7 S '- 3 r - O S ^ DESCRIPTION FEATURES The Signetics SCN2681 Dual Universal

BLF548

Abstract: 015 capacitor philips ceramic trimmer capacitor T-39 SOT262A2 665mm tj915 D0440
Contextual Info: Product «pacification Philips Semiconductor« UHF push-pull power MOS transistor BLF548 SbE D PHILIPS INTERNATIONAL I 711DflSb 0044051 ôdb BIPHIN T - 3 1 - / S PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

Contextual Info: / s 3 i~ /^7 NPN 1 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION SbE D • BF747W 711DflSb G D 4 4 T 7 0 b33 M P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF

BYX25-600

Abstract: BYX25 BYX25-600R diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134
Contextual Info: BYX25 SERIES “ SbE D PHILIPS INTERNATIONAL • 711DflSb □ □ m S T b S4M ■ PHIN T-07-H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable o f absorbing transients and intended fo r power rectifie r applications. The series consists o f the follow ing types:

SOT-173

Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173
Contextual Info: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure

BLF241

Abstract: BLF241E 2322 653 71005 International Power Sources transistor-BLF241E
Contextual Info: Philips Semiconductor» HF/VHF power MOS transistor PHILIPS INTERNATIONAL 5 faE ì> M 3*1"0 7 BLF241E 711DflSb 0DM377S 4bb H P H I N PIN CONFIGURATION FEATURES • • • • • J- High power gain Easy power control Gold metallization Good thermal stability

2N2894A

Abstract: TRANSISTOR LC80 ic 741 by philips 7ZS6554
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711DflSb O O M S b m 2N2894A Data sheet status Preliminary specification date of issue December 1990 2fl7 ■ P H I N "F3S-C7 Silicon switching transistor Q U IC K R E F E R E N C E DATA UNIT M AX. MIN. CONDITIONS PARAM ETER

74F257

Abstract: F257 N74F257D 74F257A N74F257AD N74F257AN N74F257N 74f257adc F257A
Contextual Info: 5flE » PHILIPS INTERNATIONAL P hilip* S e m ic o n d u c to n -S Ig n a H c s Document No. 853-0360 711DflSb ODSSOflfl 7ST « P H I N FAST 74F257, 74F257A Data Selectors/Multiplexers ECN No. 98483 Dale of issue January 8,1990 Status Product Specification