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    711DFLST Search Results

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    BYX96

    Abstract: T17C as6 diode BYX96-300 BYX96-300R BYX96-300U D60-r
    Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 711DflSt. D041bS5 1T3 ■ PHIN r-o ■ n RECTIFIER DIODES Also available to B S 9 331-F 129 Silicon rectifier diodes in metal envelopes similar to DO -4, intended fo r use in power rectifier applications. The series consists o f the following types:


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    PDF BYX96 G041bS5 BS9331-F129 BYX96-300 BYX96-300R 1600R. 7Z72262 BYX96 T17C as6 diode BYX96-300U D60-r

    TIP2955

    Abstract: TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
    Text: TIP2955 PHILIPS INTERNATIONAL SbE D • 711DflSt, 0 0 4 3 5 ^ 6 1T1 ■ 7 “- 3 3 PH IN ’ - Z 3 SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SO T-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is T IP 3 0 5 5 .


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    PDF TIP2955 OT-93 TIP3055. 711002b 0043fciD2 TIP2955 TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955

    100-P

    Abstract: BUK454-800A BUK454-800B T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 711DflSt. 00b4D71 BUK454-800A/B T0220AB BUK454 -800A -800B 100-P BUK454-800A BUK454-800B

    4046 application note 9398

    Abstract: 4046 application note pll 4046 application note 9398 649 90011 4046 as FM demodulator 4046 PLL Designers Guide PLL WITH VCO 4046 4046 application note pll philips 4046 vco Zero-Crossing Trigger-Phase Control Circuit Dim 4046 application note philips
    Text: PHILIPS INTERNATIONAL M E , „ ?11Qé2t ^ -p | P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n PLL with bandgap controlled VCO 74HCT9046A FEATURES • Frequency discrimination


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    PDF 74HCT9046A 4046 application note 9398 4046 application note pll 4046 application note 9398 649 90011 4046 as FM demodulator 4046 PLL Designers Guide PLL WITH VCO 4046 4046 application note pll philips 4046 vco Zero-Crossing Trigger-Phase Control Circuit Dim 4046 application note philips

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


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    PDF BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411

    1df diode

    Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
    Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface


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    PDF 711Dfl2b 74ABT240-1 12mA/-32mA 500mA 74ABT240-1 74ABT 500ns 1df diode 74ABT240-1D 74ABT240-1DB 74ABT240-1N

    circuit diagram of rc transmitter and receiver

    Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
    Text: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS


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    PDF SC68C562 SC68C562 circuit diagram of rc transmitter and receiver philips e3 Philips KS capacitors SC68C562C1N SCN68562

    BAS45

    Abstract: IEC134
    Text: 5bE D IPHIN 711002b 0040103 375 PHILIPS INTERNATIONAL BAS45 T -0 7 -IS SbE D LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope, Q UICK REFERENCE D A T A Continuous reverse voltage Vr max.


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    PDF 711002b BAS45 T-07-/S DO-34) DO-34 OD-68) BAS45 711Dfl2b D0401flM 711002b IEC134

    54ABT125

    Abstract: No abstract text available
    Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers


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    PDF 54ABT125 48mA/-24mA 500mA 54ABT125 DESIGNATOABT125 500ns

    FX1115

    Abstract: BGY145B vHF amplifier module VHF Amplifier Chip rf amplifier module 100 VTB 307 vhf amplifier MCB415
    Text: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145B PINNING - SOT183A The BGY145B is a RF amplifier module, designed for use in transmitters of mobile communications equipment powered by vehicles with 12.5 V battery supplies.


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    PDF BGY145B BGY145B outp40 OT183A. FX1115 vHF amplifier module VHF Amplifier Chip rf amplifier module 100 VTB 307 vhf amplifier MCB415

    5.5MHz ceramic Filter

    Abstract: TOKO 455KHz ceramic filter ceramic filter 5.5mhz filter 455khz Toko variable coil 7mm 455KHz IF npo 22j Ceramic filter 455khz Murata 455KHz TOKO ceramic filter NE605
    Text: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system_ DESCRIPTION The SA608 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,


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    PDF SA608 SA608 20-lead NE605. 455kHz 5.5MHz ceramic Filter TOKO 455KHz ceramic filter ceramic filter 5.5mhz filter 455khz Toko variable coil 7mm 455KHz IF npo 22j Ceramic filter 455khz Murata 455KHz TOKO ceramic filter NE605

    M2404

    Abstract: BT138F triac 134 M3403 triac bt138f
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g


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    PDF 711002b L22R5 BT138F OT-186 BT138F- M2404 triac 134 M3403 triac bt138f

    SMD 5 PIN PAL1

    Abstract: 74F5074 74F74
    Text: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise


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    PDF ABT22V1OA/B ABT22V10 996Feb19 SMD 5 PIN PAL1 74F5074 74F74

    ha 13627

    Abstract: APC UPS CIRCUIT DIAGRAM APC UPS WIRING DIAGRAM APC UPS CIRCUIT layout CIRCUIT DIAGRAM APC UPS 700 f5j transistor stt 433 AM Transmitter block diagram P8XC592 APC UPS 650 CIRCUIT DIAGRAM P87C592
    Text: INTEGRATED CIRCUITS i A S l n l H I T P8XC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of August 1992 File under Integrated Circuits, IC20 January 1995 Philips Semiconductors PHILIPS 7110 62 b DOfibbTb bflH Philips Semiconductors


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    PDF P8XC592 711062b SCD36 453062/150Q/02/pp116 7110A2b ha 13627 APC UPS CIRCUIT DIAGRAM APC UPS WIRING DIAGRAM APC UPS CIRCUIT layout CIRCUIT DIAGRAM APC UPS 700 f5j transistor stt 433 AM Transmitter block diagram P8XC592 APC UPS 650 CIRCUIT DIAGRAM P87C592

    compandor

    Abstract: CD8373D CD8373DK S020 SA5752 SA5753 TDA7050 TDA7050T UMA1000T audio compressor expander IC 8 pin
    Text: INTEGRATED CIRCUITS CD8373 Audio processor — filter and control section Preliminary specification 1995 Feb 17 IC 17 Philips Semiconductors PHILIPS PH ILIPS 7110fl2b 0 0 6 ^ 1 0 3 =120 P relim inary specification Philips S em iconductors Audio processor - filter and control section


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    PDF CD8373 711002b CD8373 OT266-1 7110flBfc> compandor CD8373D CD8373DK S020 SA5752 SA5753 TDA7050 TDA7050T UMA1000T audio compressor expander IC 8 pin

    BYX25

    Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
    Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:


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    PDF BYX25 711Dfl2b BYX25--600 BYX25--1400. BYX25--600R BYX25--1400R. 10-32UNF 711DflSti BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400

    PCD3346T

    Abstract: MAB8400 3843 application note multiway amplifier MAB8048 PCD3312 PCD3346P S028 pj 21 s1j SOT117
    Text: PCD3346 SINGLE-CHIP 8-BIT MICROCONTROLLER DESCRIPTION The PCD3346 is a single-chip 8-bit m icrocontroller manufactured in CMOS technology. The PCD3346 is a member o f the PCD33XX fam ily and as such has special on-chip features fo r telephony applications.


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    PDF PCD3346 PCD3346 PCD33XX MAB8048 MAB8400 12tXTAL PCD3346T 3843 application note multiway amplifier PCD3312 PCD3346P S028 pj 21 s1j SOT117

    fdk transformer ei

    Abstract: TDA8760
    Text: P hilips S em iconductors P re lim in a ry sp ecification 10-bit high-speed analog-to-digital converter TDA8760 FEATURES APPLICATIONS • 10-bit resolution • High-speed analog-to-digltal conversion for • Sampling rate up to 50 MHz - Video signal digitizing


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    PDF 10-bit TDA8760 100nF 7110A2b 00772b1 fdk transformer ei TDA8760

    LTN211R-10

    Abstract: DL 711 PHILIPS LTN211 philips dl 711 DISPLAY LTN211R LTN211F-10 LTN211R-50 philips ltn211r 84x44x DDS71
    Text: PHILIPS INTERNATIONAL bDE D • TllOfiab 0D5712B 2T3 ■ P H I N P h ilip s C o m p o n e n ts LTN211 Data sheet status P r o d u c t s p e c ific a tio n date of issue J u ly 1 9 9 0 Liquid crystal display Q UICK REFERENCE DATA MODULE DESCRIPTION The LTN211 is a 5 x 7 dot, 16-character, 2-line dot matrix


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    PDF 0D5712B LTN211 LTN211 16-character, 711002b LTN211R-10 DL 711 PHILIPS philips dl 711 DISPLAY LTN211R LTN211F-10 LTN211R-50 philips ltn211r 84x44x DDS71

    itt 2222

    Abstract: BGY115D ITT 2222 A transistor 6 pin SMD Z2 Z8 ITT BGV115A BGY115A BGY115B MSA907
    Text: Product specification Philips Semiconductors BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules PINNING -S O T 321A FEATURES • 6 V nominal supply voltage1996 May 13 PIN • 1.2 W output power BGY115A, BGY115B and BGY115D • 1.4 W output power (BGY115C/P)


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    PDF voltage1996 BGY115A, BGY115B BGY115D) BGY115C/P) BGY115A; BGY115B; BGY115C/P; BGY115D -SOT321A itt 2222 BGY115D ITT 2222 A transistor 6 pin SMD Z2 Z8 ITT BGV115A BGY115A MSA907

    lts 542 pin diagram

    Abstract: lts 542 lts 542 diagram pin diagram of LTS 542 SJ0001 fuse smd code N fuse smd code Y 74F5074 74F74 fuse smd code ps
    Text: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise


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    PDF ABT22V1OA/B ABT22V10 By71s lts 542 pin diagram lts 542 lts 542 diagram pin diagram of LTS 542 SJ0001 fuse smd code N fuse smd code Y 74F5074 74F74 fuse smd code ps

    eeprom st

    Abstract: DIP28 MAB8048 PCD3755A PCD3755AP PCD3755AT PCD3755E PCD3755EP S028 ic la 7840
    Text: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator, 8 kbytes OTP and 128 bytes EEPROM_ CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description


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    PDF 711D6Sb D1D3111 eeprom st DIP28 MAB8048 PCD3755A PCD3755AP PCD3755AT PCD3755E PCD3755EP S028 ic la 7840

    BLX91A

    Abstract: BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305
    Text: PHI L IP S IN TE R N A T I O N A L MAINTENANCE TYPE MIE J> 7 1 10 â 2 b 0 0 27 0 2 3 □ B i PHIN B LX 91A . m T '3 3 'O S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a


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    PDF BLX91A. T-33-OS 28ency June1976 BLX91A BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305

    2222 861

    Abstract: BGY47B heatsink catalogue PHILIPS UHF AMPLIFIER MODULE LIST
    Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY47B FEA TU R ES D E S C R IP T IO N • 7 .5 V or 9 .6 V nominal supply voltage T h e B G Y 47B is a tw o-stage U H F am plifier module. • 2 W or 3 .2 W output power It consists of two N P N silicon planar transistor chips


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    PDF BGY47B PINNING-SOT181 BGY47B 711062b 00741B4 OT181. 7110flEb 2222 861 heatsink catalogue PHILIPS UHF AMPLIFIER MODULE LIST