BYX96
Abstract: T17C as6 diode BYX96-300 BYX96-300R BYX96-300U D60-r
Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 711DflSt. D041bS5 1T3 ■ PHIN r-o ■ n RECTIFIER DIODES Also available to B S 9 331-F 129 Silicon rectifier diodes in metal envelopes similar to DO -4, intended fo r use in power rectifier applications. The series consists o f the following types:
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BYX96
G041bS5
BS9331-F129
BYX96-300
BYX96-300R
1600R.
7Z72262
BYX96
T17C
as6 diode
BYX96-300U
D60-r
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TIP2955
Abstract: TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
Text: TIP2955 PHILIPS INTERNATIONAL SbE D • 711DflSt, 0 0 4 3 5 ^ 6 1T1 ■ 7 “- 3 3 PH IN ’ - Z 3 SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SO T-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is T IP 3 0 5 5 .
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TIP2955
OT-93
TIP3055.
711002b
0043fciD2
TIP2955
TIP2955 NPN power transistor
transistor PNP TIP2955
TIP3055
circuit use tip2955
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100-P
Abstract: BUK454-800A BUK454-800B T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711DflSt.
00b4D71
BUK454-800A/B
T0220AB
BUK454
-800A
-800B
100-P
BUK454-800A
BUK454-800B
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4046 application note 9398
Abstract: 4046 application note pll 4046 application note 9398 649 90011 4046 as FM demodulator 4046 PLL Designers Guide PLL WITH VCO 4046 4046 application note pll philips 4046 vco Zero-Crossing Trigger-Phase Control Circuit Dim 4046 application note philips
Text: PHILIPS INTERNATIONAL M E , „ ?11Qé2t ^ -p | P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n PLL with bandgap controlled VCO 74HCT9046A FEATURES • Frequency discrimination
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74HCT9046A
4046 application note 9398
4046 application note pll
4046 application note 9398 649 90011
4046 as FM demodulator
4046 PLL Designers Guide
PLL WITH VCO 4046
4046 application note pll philips
4046 vco
Zero-Crossing Trigger-Phase Control Circuit Dim
4046 application note philips
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BUK427-600B
Abstract: 18-SO BUK427-600 d0411
Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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BUK427-600
711Dfl2t.
D0411S0
-SOT199
BUK427-600B
18-SO
d0411
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1df diode
Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface
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711Dfl2b
74ABT240-1
12mA/-32mA
500mA
74ABT240-1
74ABT
500ns
1df diode
74ABT240-1D
74ABT240-1DB
74ABT240-1N
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circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Text: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS
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SC68C562
SC68C562
circuit diagram of rc transmitter and receiver
philips e3
Philips KS capacitors
SC68C562C1N
SCN68562
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BAS45
Abstract: IEC134
Text: 5bE D IPHIN 711002b 0040103 375 PHILIPS INTERNATIONAL BAS45 T -0 7 -IS SbE D LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope, Q UICK REFERENCE D A T A Continuous reverse voltage Vr max.
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711002b
BAS45
T-07-/S
DO-34)
DO-34
OD-68)
BAS45
711Dfl2b
D0401flM
711002b
IEC134
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54ABT125
Abstract: No abstract text available
Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54ABT125
48mA/-24mA
500mA
54ABT125
DESIGNATOABT125
500ns
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FX1115
Abstract: BGY145B vHF amplifier module VHF Amplifier Chip rf amplifier module 100 VTB 307 vhf amplifier MCB415
Text: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145B PINNING - SOT183A The BGY145B is a RF amplifier module, designed for use in transmitters of mobile communications equipment powered by vehicles with 12.5 V battery supplies.
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BGY145B
BGY145B
outp40
OT183A.
FX1115
vHF amplifier module
VHF Amplifier Chip
rf amplifier module
100 VTB 307
vhf amplifier
MCB415
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5.5MHz ceramic Filter
Abstract: TOKO 455KHz ceramic filter ceramic filter 5.5mhz filter 455khz Toko variable coil 7mm 455KHz IF npo 22j Ceramic filter 455khz Murata 455KHz TOKO ceramic filter NE605
Text: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system_ DESCRIPTION The SA608 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
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SA608
SA608
20-lead
NE605.
455kHz
5.5MHz ceramic Filter
TOKO 455KHz ceramic filter
ceramic filter 5.5mhz
filter 455khz
Toko variable coil 7mm 455KHz IF
npo 22j
Ceramic filter 455khz
Murata 455KHz
TOKO ceramic filter
NE605
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M2404
Abstract: BT138F triac 134 M3403 triac bt138f
Text: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g
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711002b
L22R5
BT138F
OT-186
BT138F-
M2404
triac 134
M3403
triac bt138f
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SMD 5 PIN PAL1
Abstract: 74F5074 74F74
Text: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise
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ABT22V1OA/B
ABT22V10
996Feb19
SMD 5 PIN PAL1
74F5074
74F74
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ha 13627
Abstract: APC UPS CIRCUIT DIAGRAM APC UPS WIRING DIAGRAM APC UPS CIRCUIT layout CIRCUIT DIAGRAM APC UPS 700 f5j transistor stt 433 AM Transmitter block diagram P8XC592 APC UPS 650 CIRCUIT DIAGRAM P87C592
Text: INTEGRATED CIRCUITS i A S l n l H I T P8XC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of August 1992 File under Integrated Circuits, IC20 January 1995 Philips Semiconductors PHILIPS 7110 62 b DOfibbTb bflH Philips Semiconductors
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P8XC592
711062b
SCD36
453062/150Q/02/pp116
7110A2b
ha 13627
APC UPS CIRCUIT DIAGRAM
APC UPS WIRING DIAGRAM
APC UPS CIRCUIT layout
CIRCUIT DIAGRAM APC UPS 700
f5j transistor
stt 433 AM Transmitter block diagram
P8XC592
APC UPS 650 CIRCUIT DIAGRAM
P87C592
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compandor
Abstract: CD8373D CD8373DK S020 SA5752 SA5753 TDA7050 TDA7050T UMA1000T audio compressor expander IC 8 pin
Text: INTEGRATED CIRCUITS CD8373 Audio processor — filter and control section Preliminary specification 1995 Feb 17 IC 17 Philips Semiconductors PHILIPS PH ILIPS 7110fl2b 0 0 6 ^ 1 0 3 =120 P relim inary specification Philips S em iconductors Audio processor - filter and control section
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CD8373
711002b
CD8373
OT266-1
7110flBfc>
compandor
CD8373D
CD8373DK
S020
SA5752
SA5753
TDA7050
TDA7050T
UMA1000T
audio compressor expander IC 8 pin
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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BYX25
711Dfl2b
BYX25--600
BYX25--1400.
BYX25--600R
BYX25--1400R.
10-32UNF
711DflSti
BYX25-600
diode BYX25 600
BYX25-600R
BYX25-1400
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PCD3346T
Abstract: MAB8400 3843 application note multiway amplifier MAB8048 PCD3312 PCD3346P S028 pj 21 s1j SOT117
Text: PCD3346 SINGLE-CHIP 8-BIT MICROCONTROLLER DESCRIPTION The PCD3346 is a single-chip 8-bit m icrocontroller manufactured in CMOS technology. The PCD3346 is a member o f the PCD33XX fam ily and as such has special on-chip features fo r telephony applications.
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PCD3346
PCD3346
PCD33XX
MAB8048
MAB8400
12tXTAL
PCD3346T
3843 application note
multiway amplifier
PCD3312
PCD3346P
S028
pj 21 s1j
SOT117
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fdk transformer ei
Abstract: TDA8760
Text: P hilips S em iconductors P re lim in a ry sp ecification 10-bit high-speed analog-to-digital converter TDA8760 FEATURES APPLICATIONS • 10-bit resolution • High-speed analog-to-digltal conversion for • Sampling rate up to 50 MHz - Video signal digitizing
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10-bit
TDA8760
100nF
7110A2b
00772b1
fdk transformer ei
TDA8760
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LTN211R-10
Abstract: DL 711 PHILIPS LTN211 philips dl 711 DISPLAY LTN211R LTN211F-10 LTN211R-50 philips ltn211r 84x44x DDS71
Text: PHILIPS INTERNATIONAL bDE D • TllOfiab 0D5712B 2T3 ■ P H I N P h ilip s C o m p o n e n ts LTN211 Data sheet status P r o d u c t s p e c ific a tio n date of issue J u ly 1 9 9 0 Liquid crystal display Q UICK REFERENCE DATA MODULE DESCRIPTION The LTN211 is a 5 x 7 dot, 16-character, 2-line dot matrix
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0D5712B
LTN211
LTN211
16-character,
711002b
LTN211R-10
DL 711 PHILIPS
philips dl 711
DISPLAY LTN211R
LTN211F-10
LTN211R-50
philips ltn211r
84x44x
DDS71
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itt 2222
Abstract: BGY115D ITT 2222 A transistor 6 pin SMD Z2 Z8 ITT BGV115A BGY115A BGY115B MSA907
Text: Product specification Philips Semiconductors BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules PINNING -S O T 321A FEATURES • 6 V nominal supply voltage1996 May 13 PIN • 1.2 W output power BGY115A, BGY115B and BGY115D • 1.4 W output power (BGY115C/P)
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voltage1996
BGY115A,
BGY115B
BGY115D)
BGY115C/P)
BGY115A;
BGY115B;
BGY115C/P;
BGY115D
-SOT321A
itt 2222
BGY115D
ITT 2222 A
transistor 6 pin SMD Z2
Z8 ITT
BGV115A
BGY115A
MSA907
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lts 542 pin diagram
Abstract: lts 542 lts 542 diagram pin diagram of LTS 542 SJ0001 fuse smd code N fuse smd code Y 74F5074 74F74 fuse smd code ps
Text: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise
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ABT22V1OA/B
ABT22V10
By71s
lts 542 pin diagram
lts 542
lts 542 diagram
pin diagram of LTS 542
SJ0001
fuse smd code N
fuse smd code Y
74F5074
74F74
fuse smd code ps
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eeprom st
Abstract: DIP28 MAB8048 PCD3755A PCD3755AP PCD3755AT PCD3755E PCD3755EP S028 ic la 7840
Text: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator, 8 kbytes OTP and 128 bytes EEPROM_ CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description
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711D6Sb
D1D3111
eeprom st
DIP28
MAB8048
PCD3755A
PCD3755AP
PCD3755AT
PCD3755E
PCD3755EP
S028
ic la 7840
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BLX91A
Abstract: BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305
Text: PHI L IP S IN TE R N A T I O N A L MAINTENANCE TYPE MIE J> 7 1 10 â 2 b 0 0 27 0 2 3 □ B i PHIN B LX 91A . m T '3 3 'O S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a
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BLX91A.
T-33-OS
28ency
June1976
BLX91A
BLX91
J 3305
transistor 936
transistor 931
D057
G027
IEC134
transistor 3305
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2222 861
Abstract: BGY47B heatsink catalogue PHILIPS UHF AMPLIFIER MODULE LIST
Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY47B FEA TU R ES D E S C R IP T IO N • 7 .5 V or 9 .6 V nominal supply voltage T h e B G Y 47B is a tw o-stage U H F am plifier module. • 2 W or 3 .2 W output power It consists of two N P N silicon planar transistor chips
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BGY47B
PINNING-SOT181
BGY47B
711062b
00741B4
OT181.
7110flEb
2222 861
heatsink catalogue
PHILIPS UHF AMPLIFIER MODULE LIST
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