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    Nexperia BAS45A,113

    DIODE GEN PURP 125V 250MA DO34
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    DigiKey BAS45A,113 Cut Tape 16,030 1
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    Nexperia BAS45A,133

    DIODE GEN PURP 125V 250MA DO34
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    DigiKey BAS45A,133 Cut Tape 6,036 1
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    BAS45A,133 Ammo Pack 10,000
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    Nexperia BAS45A,143

    DIODE GEN PURP 125V 250MA DO34
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    BAS45A,143 Ammo Pack 5,000
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    Nexperia BAS45AL,115

    DIODE STANDARD 125V 250MA LLDS
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    DigiKey BAS45AL,115 Digi-Reel 1,079 1
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    Nexperia BAS45AL115

    Diode Switching 125V 0.25A 2-Pin Mini-MELF T/R - Tape and Reel (Alt: BAS45AL,115)
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    Avnet Americas BAS45AL115 Reel 32,500 8 Weeks 2,500
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    Find more BAS45 price and stock on Findchips.com

    BAS45 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS45 Philips Semiconductors Low Leakage Diode Original PDF
    BAS45 Siemens Cross Reference Guide 1998 Original PDF
    BAS45 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS45 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BAS45A NXP Semiconductors BAS45A - Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V Original PDF
    BAS45A Philips Semiconductors Low-leakage diode Original PDF
    BAS45A Philips Semiconductors Low-leakage diode Scan PDF
    BAS45A,113 NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Reel pack axial radial Original PDF
    BAS45A,133 NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Ammo pack axial radial taped Original PDF
    BAS45A,143 NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Ammo pack axial radial taped Original PDF
    BAS45AAMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BAS45AL NXP Semiconductors BAS45AL - Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V Original PDF
    BAS45AL Philips Semiconductors Low-leakage diode Original PDF
    BAS45AL,115 NXP Semiconductors BAS45 - DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode Original PDF
    BAS45AL,115 NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd Original PDF
    BAS45ALT/R NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V Original PDF
    BAS45AT/R NXP Semiconductors Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V Original PDF
    BAS45ATR Philips Semiconductors Low-leakage diode Original PDF
    BAS45AT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BAS45L Philips Semiconductors Low Leakage Diode Original PDF

    BAS45 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAS45

    Abstract: IEC134
    Text: 5bE D IPHIN 711002b 0040103 375 PHILIPS INTERNATIONAL BAS45 T -0 7 -IS SbE D LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope, Q UICK REFERENCE D A T A Continuous reverse voltage Vr max.


    OCR Scan     		711002b BAS45 T-07-/S DO-34) DO-34 OD-68) BAS45 711Dfl2b D0401flM 711002b IEC134 PDF

    BAV45A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSaTBl aaiblfi'l S ■ 'f'03-'0ct Small Signal Devices LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V 20 125 ¥ |r 50 225 5pA 1nA (m A l (S VF (V ) 1.00 0.80 Vr m 5 125 @ r If (m A> I 10 ■ 5 c <f - " 600


    OCR Scan     		BAV45A BAS45 DO-34 BAT81 BAT82 BAT83 BAT85 BAT86 BYV10-20 BYV10-30 BAV45A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-leakage diode BAS45A FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 DO-34 package. • Repetitive peak forward current:


    OCR Scan     		BAS45A DO-34) 711002b PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet Supersedes data of June 1994 1996 Mar 13 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V


    Original     		M3D050 BAS45A DO-34) MAM156 PDF

    BAS45A

    Abstract: DO-34 PACKAGE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode BAS45A


    Original     		M3D050 BAS45A DO-34) MAM156 BAS45A DO-34 PACKAGE PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a small SOD8QC glass SMD package. • Repetitive peak forward current:


    OCR Scan     		BAS45AL PDF

    BAS45AL

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BAS45AL Low-leakage diode 1999 May 04 Product specification Supersedes data of 1996 Mar 13 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage:


    OCR Scan     		BAS45AL BAS45AL SCA64 5002/00/03/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25


    Original     		BAS45A Current200m Voltage125 Current500n StyleDO-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal


    OCR Scan     		D02b230 BAS45L bb53T31 Q02b232 bb53131 Q0Eb233 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45 J V LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. Q UICK REFERENCE D ATA Continuous reverse voltage Vr max. 125 V Forward voltage Ip = 200 mA vF max. 1,0 V Reverse current V R = 125 V


    OCR Scan     		BAS45 DO-34) DO-34 OD-68) 7Z92I41 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BAS45A Low-leakage diode FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 DO-34 package. • Repetitive peak forward current:


    OCR Scan     		BAS45A DO-34) PDF

    BAS45A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet Supersedes data of June 1994 1996 Mar 13 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION • Continuous reverse voltage:


    Original     		M3D050 BAS45A DO-34) MAM156 BAS45A PDF

    BAS45A

    Abstract: BAS45A diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode BAS45A FEATURES DESCRIPTION • Continuous reverse voltage:


    Original     		M3D050 BAS45A DO-34) MAM156 BAS45A BAS45A diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a small glass SOD80C SMD package. • Repetitive peak forward current:


    OCR Scan     		BAS45AL OD80C MBQ70-4 PDF

    BAS45

    Abstract: BAS45(A)L BAS45A pht 094
    Text: N AMER PHILIPS/DISCRETE b*ïE D • bbSBIBl DG2b2Eb 433 IAPX BAS45 A LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass D O -34 envelope. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage


    OCR Scan     		BAS45 DO-34) DO-34 OD-68) 0D2b22a BAS45 BAS45(A)L BAS45A pht 094 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45AL Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25


    Original     		BAS45AL Current200m Voltage125 Current500n PDF

    BAS45L

    Abstract: S18B
    Text: SbE D m 711DÖ5b 0DMD1Ö7 T1D « P H I N PHILIPS INTERNATIONAL BAS 45L SbE D T -O T -tS LOW LEAKAG E DIODE FOR SURFACE M OUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-8 O envelope w ith lead/tin-plated metal


    OCR Scan     		BAS45L T-07-1 BAS45L T-07-15 S18B PDF

    BAV45A

    Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■


    OCR Scan     		febS3131 T-03-09 BAV45A BAS45 DO-34 BAT81 200nA BAT82 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45AL Low-leakage diode Rev. 5 — 6 August 2010 Product data sheet 1. Product profile 1.1 General description Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.


    Original     		BAS45AL OD80C 250nitions PDF

    BAS45AL

    Abstract: BAS45AL PHILIPS M3D121
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode BAS45AL


    Original     		M3D121 BAS45AL OD80C MAM061 OD80C) BAS45AL BAS45AL PHILIPS M3D121 PDF

    BAS45AL

    Abstract: M3D121
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes data of 1999 May 04 1999 May 28 Philips Semiconductors Product specification Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage:


    Original     		M3D121 BAS45AL OD80C MAM061 OD80C) 115002/04/pp8 BAS45AL M3D121 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current225m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)


    Original     		BAS45 Current225m Voltage125 Current500n StyleDO-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS45L Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current225m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)25õ


    Original     		BAS45L Current225m Voltage125 Current500n StyleSOD-80 PDF

    BAS45L

    Abstract: No abstract text available
    Text: _ A _ BAS45L LOW LEAKAGE DIODE FOR SURFACE MOUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith lead/tin-plated metal discs at each end. It is suitable fo r "autom atic placement" and as such it can withstand immersion


    OCR Scan     		BAS45L BAS45L OD-80 PDF