STB5NA80 Search Results

STB5NA80 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
STB5NA80	STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor	Original	PDF
STB5NA80	STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF
STB5NA80-1	STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor	Original	PDF
STB5NA80T4	STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor	Original	PDF

STB5NA80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STB5NA80 Abstract: D2PACK Contextual Info: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STB5NA80 800 V < 2.4 Ω 4.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	STB5NA80 100oC O-262) O-263) O-262 STB5NA80 D2PACK	PDF
Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STB5NA80 O-262) O-263) O-263	PDF
B5NA80 Abstract: 0053D STB5NA80 b5na Contextual Info: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B5NA80 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 2.4 Ω 4.7 A TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	STB5NA80 B5NA80 100oC O-262) O-263) O-262 B5NA80 0053D STB5NA80 b5na	PDF

Catalog Datasheet

Type

Document Tags

PDF

STB5NA80

Abstract: D2PACK
Contextual Info: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STB5NA80 800 V < 2.4 Ω 4.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Original

STB5NA80 100oC O-262) O-263) O-262 STB5NA80 D2PACK

PDF

Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

OCR Scan

STB5NA80 O-262) O-263) O-263

PDF

B5NA80

Abstract: 0053D STB5NA80 b5na
Contextual Info: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B5NA80 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 2.4 Ω 4.7 A TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Original

STB5NA80 B5NA80 100oC O-262) O-263) O-262 B5NA80 0053D STB5NA80 b5na

PDF