SUB65P06 Search Results

Contextual Info: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20

sup65p06

Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB65P06-20

Contextual Info: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB65P06-20

Abstract: SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB65P06

Abstract: SUP65P06
Contextual Info: SUP/SUB65P06Ć20 Siliconix PĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) -60 0.020 -65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET

sup65p06

Abstract: SUB65P06-20 SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

sub65p06-20

Abstract: SUB65P06 SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUB65P06-20

Abstract: SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

P65P06-20

Contextual Info: Tem ic SUP/SUB65P06-20 Siliconix P-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB TO-263 1 D R A IN con n ected to TAB G D S Top View ò D SUB65P06-20 P-C hannel M O S F E T SU P65P06-20 Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted

S0511

Abstract: sup65p06 SUB65P06-20 SUP65P06-20 sub65p06
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB65P06

Abstract: SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUB65P06

Abstract: SUB65P06-20
Contextual Info: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60x-V D-S , 175°°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB65P06-20

Contextual Info: SUP/SUB65P06-20 Siliconix P-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TOĆ220AB S TOĆ263 G DRAIN connected to TAB GD S G D S Top View Top View D PĆChannel MOSFET SUB65P06Ć20 SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Sot23 SL6 TRANSISTOR

Abstract: DIODE SMD S44 yageo Phycomp 2238 571-0100-01 smd transistor R5B smd diode r5a Sot23 SL6 S6 SMD zener diode smd transistor A6s smd s6 vishay
Contextual Info: Evaluation Kit for the ADM1191/ADM1192 EVAL-ADM1191/ADM1192 PRODUCT DESCRIPTION EVALUATION BOARD DESCRIPTION This evaluation board allows the ADM1191/ADM1192 devices to be easily evaluated. The ADM1191/ADM1192 are integrated current sense amplifiers that offer digital current and voltage

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

irf 539

Abstract: irf 536 IRF 810 MOTOROLA SN74LS47N motorola SN74LS541N tibpal16l8-25cn SN75179BP IRF 544 ST110S16P SN74LS47N
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor