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    D2PAK Search Results

    D2PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSD19505KTTT Texas Instruments 80V, N ch NexFET MOSFET™, single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD18535KTTT Texas Instruments 60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD18542KTT Texas Instruments 60V, N ch NexFET MOSFET™, single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD19536KTT Texas Instruments 100V, N ch NexFET MOSFET™, single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD19506KTT Texas Instruments 80V, N ch NexFET MOSFET™, single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
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    D2PAK Price and Stock

    onsemi NCP-NCV51752D2PAK7LGEVB

    EVB WITH D2PAK-7L TYPE POWER S/W
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    DigiKey NCP-NCV51752D2PAK7LGEVB Box 5 1
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    Avnet Americas NCP-NCV51752D2PAK7LGEVB Bulk 5
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    Mouser Electronics NCP-NCV51752D2PAK7LGEVB
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    onsemi NCP-NCV51752D2PAK3LGEVB

    EVB WITH D2PAK-3L TYPE POWER S/W
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    DigiKey NCP-NCV51752D2PAK3LGEVB Box 5 1
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    Mouser Electronics NCP-NCV51752D2PAK3LGEVB 5
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    onsemi NCP-NCV51561D2PAK7LGEVB

    EVAL BOARD FOR NCV51561
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    DigiKey NCP-NCV51561D2PAK7LGEVB Bulk 5 1
    • 1 $130.98
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    Avnet Americas NCP-NCV51561D2PAK7LGEVB Bulk 6
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    Mouser Electronics NCP-NCV51561D2PAK7LGEVB 4
    • 1 $122.53
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    Newark NCP-NCV51561D2PAK7LGEVB Bulk 2
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    onsemi NCP-NCV51152D2PAK7LGEVB

    EVAL BOARD FOR NCV51152
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    DigiKey NCP-NCV51152D2PAK7LGEVB Box 5 1
    • 1 $164.81
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    Mouser Electronics NCP-NCV51152D2PAK7LGEVB 5
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    onsemi NCP-NCV51563D2PAK7LGEVB

    EVAL BOARD FOR NCV51563
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    DigiKey NCP-NCV51563D2PAK7LGEVB Bulk 2 1
    • 1 $130.98
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    Mouser Electronics NCP-NCV51563D2PAK7LGEVB 3
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    Newark NCP-NCV51563D2PAK7LGEVB Bulk 1
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    New Advantage Corporation NCP-NCV51563D2PAK7LGEVB 5 1
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    D2PAK Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D2PAK STMicroelectronics D2PAK WITHOUT NOTCHS - ASD & DISCRETES - TOURS Original PDF
    D2Pak Package International Rectifier Case Outline and Dimensions Original PDF
    D2PAK WITH NOTCHS STMicroelectronics D2PAK - ASD & DISCRETES - TOURS Original PDF

    D2PAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b2545g

    Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 


    Original     		MBRB2545CTG, SBRB2545CTG O-220 AEC-Q101 MBRB2545CT/D b2545g B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry PDF

    SMD L4 Regulator SOT-223

    Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
    Text: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on


    Original     		NCV4274, NCV4274A NCV4274 OT-223 NCV4274/D SMD L4 Regulator SOT-223 smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG PDF

    stp26nm60

    Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
    Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V


    Original     		STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N O-220, O-220FP O-247 STB26NM60N STF26NM60N stp26nm60 STW26NM60N 26NM60N STP26NM60N 26nm60 STB26NM60 PDF

    25NM60N

    Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
    Text: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1


    Original     		STx25NM60ND O-220FP, O-220, O-247 STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND O-220FP O-220 25NM60N 25NM60ND 25NM60 stw25nm60nd stw25 PDF

    b01619

    Abstract: D6NM60N
    Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N


    Original     		STx6NM60N O-220, O-220FP, STB6NM60N STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N O-220 b01619 D6NM60N PDF

    f25nm60n

    Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
    Text: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application


    Original     		STB25NM60Nx STF25NM60N STP25NM60N STW25NM60N O-220, O-220FP, O-247 STB25NM60N STB25NM60N-1 f25nm60n P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n PDF

    B20100G

    Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
    Text: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.


    Original     		MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G O-220 AEC-Q101 MBRB20100CT/D B20100G B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g PDF

    STTH30

    Abstract: No abstract text available
    Text: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V


    Original     		STTH30L06 STTH30L06, STTH30L06G DO-247 STTH30L06W STTH30 PDF

    IRF9510S

    Abstract: No abstract text available
    Text: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9510S, SiHF9510S O-263) 2002/95/EC 11-Mar-11 IRF9510S PDF

    IRF9530S

    Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9530S, SiHF9530S O-263) 2002/95/EC 11-Mar-11 IRF9530S SiHF9530S-E3 SiHF9530S-GE3 PDF

    IRFS11N50A

    Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf PDF

    FT1614

    Abstract: No abstract text available
    Text: FT16.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 16 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-263AB D2PAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement


    Original     		O-263AB 2011/65/EU 2002/96/EC J-STD-020, ft16ghc Oct-13 FT1614 PDF

    TRIAC BTA 28

    Abstract: TRIAC BTB08 triac BTA 32 600 TRIAC BTB08 specifications TRIAC BTB08 600 TRIAC BTa 24 TRIAC BTa 18 600 B bta 03 BTA 600 triac BTA 140
    Text: BTA/BTB08 and T8 Series 8A TRIACS SNUBBERLESS , LOGIC LEVEL & STANDARD MAIN FEATURES: A2 A2 Symbol Value Unit IT RMS 8 A VDRM/VRRM IGT (Q1) 600 and 800 5 to 50 A2 G A1 A2 A1 A2 G V A1 G D2PAK (T8-G) DPAK (T8-B) mA A2 DESCRIPTION Available either in through-hole or surface-mount


    Original     		BTA/BTB08 TRIAC BTA 28 TRIAC BTB08 triac BTA 32 600 TRIAC BTB08 specifications TRIAC BTB08 600 TRIAC BTa 24 TRIAC BTa 18 600 B bta 03 BTA 600 triac BTA 140 PDF

    STB40NF03L

    Abstract: No abstract text available
    Text: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		STB40NF03L O-263 STB40NF03L PDF

    fr4 94v0

    Abstract: 4r70 1R00 1R50 2R00 AL203 R500 R750 UL-94V0 S M R750
    Text: Ro VE LEA HS RS D CO I O N F R E M SA E PL R IA E NT * Features • RoHS compliant* ■ D2PAK housing ■ Low inductance ■ Resistor electrically isolated from the Applications backplate ■ High power rating ■ Compatible with lead free solder reflow temperatures


    Original     		PWR263 fr4 94v0 4r70 1R00 1R50 2R00 AL203 R500 R750 UL-94V0 S M R750 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3


    Original     		STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: MURHB860CT Preferred Device MEGAHERTZ Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • •


    Original     		MURHB860CT PDF

    Q2008F41

    Abstract: No abstract text available
    Text: ge a ck L. U. ED Z NI G 39 CO 716 E R #E d te ec l Se Pa s* E2 le Fi TO-92 *TO-220 TO-202 3-lead Compak TO-263 D2Pak TO-252 D-Pak TO-251 V-Pak *TO-3 Fastpak MT2 MT1 G Triacs 0.8 A to 35 A E2 General Description These gated triacs from Teccor Electronics are part of a broad


    Original     		O-220 O-202 O-263 O-252 O-251 Q2008F41 PDF

    pwr263s

    Abstract: PWR263S-20
    Text: POWER RESISTORS Bourns Releases New Power Resistor Series Riverside, California - March 31, 2009 - Bourns Fixed Resistors Product Line introduces Model PWR263S-20. It is a compact low profile power resistor rated to 20 W continuous power in a surface mount D2PAK housing making it suitable for automated assembly methods. The


    Original     		PWR263S-20. PWR263S-20 PWR263 PWR2263S-20 2002/95/EC N0839 pwr263s PDF

    Untitled

    Abstract: No abstract text available
    Text: FT25.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 25 Amp £ 50 mA D2PAK Off-State Voltage 200 V ÷ 800 V MT2 MT1 MT2 This series of TRIACs uses a high per for mance PNPN technology. G MT2 These parts are intended for general purpose AC switching applications


    Original     		PDF

    STPR1620CT

    Abstract: diode k 0368 STPR16*0CT STPR1620 STPR1620CG STPR1620CG-TR STPR1620CR STRP1620CT
    Text: STPR1620CG/CT/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV A1 2x8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns K A2 K K A2 A1 D2PAK STPR1620CG FEATURES • ■ ■ ■ SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY


    Original     		STPR1620CG/CT/CR STPR1620CG O-220AB STPR1620CT O-220AB, STPR1620CT diode k 0368 STPR16*0CT STPR1620 STPR1620CG STPR1620CG-TR STPR1620CR STRP1620CT PDF

    STB85NF55

    Abstract: STP85NF55 40AVDD
    Text: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


    Original     		STB85NF55 STP85NF55 D2PAK/TO-220 O-263 O-220 STB85NF55 STP85NF55 40AVDD PDF

    STB45N10L

    Abstract: No abstract text available
    Text: STB45N10L N-CHANNEL 100V - 0.028 Ω - 45A I2PAK/D2PAK POWER MOS TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB45N10L 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STB45N10L 100oC O-262) O-263) O-262 O-263 STB45N10L PDF

    STB45NF06

    Abstract: No abstract text available
    Text: STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 • ■ VDSS RDS on ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of


    Original     		STB45NF06 STB45NF06 PDF