SIHFS11N50A Search Results

SIHFS11N50A Price and Stock

Filter by Manufacturer


Vishay Siliconix SIHFS11N50A-GE3 MOSFET N-CH 500V 11A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFS11N50A-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.95344 10000 $0.95344	Buy Now
Vishay Intertechnologies SIHFS11N50A-GE3 MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHFS11N50A-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFS11N50A-GE3	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 $0.86534 10000 $0.81059	Buy Now
Mouser Electronics	SIHFS11N50A-GE3		970			1 $2.05 10 $1.71 100 $1.36 1000 $0.953 10000 $0.861	Buy Now
EBV Elektronik	SIHFS11N50A-GE3			9 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHFS11N50A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHFS11N50A-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 11A TO263		Original	PDF

SIHFS11N50A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFS11N50A Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFS11N50A_RC, SiHFS11N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFS11N50A SiHFS11N50A AN609, 5126m 6185m 3182m 5507m 4788m
IRFS11N50APBF Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3 Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50APBF IRFS11N50A SiHFS11N50A-E3
IRFS11N50A Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11
S10 diode Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 18-Jul-08 S10 diode
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFS11N50APBF Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFS11N50APBF
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFS11N50APBF Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50APBF